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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF15N65M5

Name: STF15N65M5
Brand: STMicroelectronics
SKU: STF15N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF15N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF15N65M5.pdf

Description:: MOSFET N-CH 650V 11A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:3,201

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Product details

Overview

STF15N65M5 from STMicroelectronics is an N-channel 650 V, 308 mΩ typ. (340 mΩ max.), 11 A MDmesh M5 Power MOSFET in TO-220 package, designed for high-efficiency hard-switching and ZVS/ZCS resonant converters in industrial SMPS, PFC stages, and solar inverters.

For engineers reviewing the STF15N65M5 datasheet, STF15N65M5 pinout, STF15N65M5 application, or STF15N65M5 equivalent, key selection criteria include its 15 V/ns dv/dt capability, 160 mJ single-pulse avalanche energy, 22 nC total gate charge, 816 pF input capacitance, and 1.47 °C/W junction-to-case thermal resistance.

Technical Context

This device uses ST's MDmesh M5 vertical superjunction process with PowerMESH layout to achieve ultra-low R_DS(on) while maintaining high V_DSS and robust dv/dt immunity. Its 650 V rating supports 400 V DC bus designs with margin, and the integrated body diode features 247 ns reverse recovery time at 100 A/µs di/dt.

The MOSFET operates with gate threshold voltage of 3–5 V (typ. 4 V), supports ±25 V V_GS, and delivers 85 W power dissipation at T_C = 25 °C. Its 5.5 Ω intrinsic gate resistance and low Crss (2.6 pF) enable fast, controllable switching with reduced EMI risk in high-frequency topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Supports 400 V DC-link applications with 62.5% voltage margin against transients.
R_DS(on) max	340 mΩ - Enables <1.9 W conduction loss at 11 A continuous drain current (T_C = 25 °C).
I_D cont	11 A - Rated for continuous operation up to 6.9 A at T_C = 100 °C, suitable for thermally constrained enclosures.
E_AS	160 mJ - Confirmed single-pulse avalanche energy ensures ruggedness during unclamped inductive switching events.
Q_g	22 nC - Low gate charge reduces driver power requirement and enables efficient 100–300 kHz operation with standard gate drivers.
dv/dt	15 V/ns - High immunity prevents false turn-on in noisy high-dV/dt environments like motor drives and PFC circuits.
C_iss	816 pF - Input capacitance value directly impacts gate drive loop stability and Miller effect in half-bridge configurations.

Pinout & Package

TO-220 type A package with isolated tab (drain-connected). Standard through-hole mounting; tab electrically connected to Drain (Pin 2) for direct heatsink coupling and thermal path optimization.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate terminal	Control input requiring ≤±25 V bias; 5.5 Ω intrinsic gate resistance affects rise/fall time tuning.
D (Pin 2 / Tab)	Drain terminal	Main high-side power node; tab serves as primary thermal interface and must be electrically isolated from heatsink unless system design permits drain-referenced cooling.
S (Pin 3)	Source terminal	Reference node for gate drive; source inductance directly impacts switching speed and oscillation risk in high-di/dt layouts.

Key Features

Feature	Design Value
MDmesh M5 superjunction technology	Enables 308 mΩ R_DS(on) at 650 V - 25% lower on-resistance than prior-generation 650 V MOSFETs in same package.
100% avalanche tested	Guarantees minimum 160 mJ E_AS per unit - eliminates need for external snubbers in flyback or LLC resonant converter primary switches.
Low Q_gd/Q_gs ratio (11 nC / 5.5 nC)	Reduces Miller plateau duration and improves controllability during hard switching - critical for stable operation above 150 kHz.
Optimized body diode (t_rr = 247 ns)	Minimizes reverse recovery losses in synchronous rectification and bidirectional topologies without requiring external SiC diodes.
ECOPACK® compliant packaging	Meets RoHS and REACH requirements with lead-free terminations and halogen-free molding compound - qualified for industrial and solar applications.

Applications

Industrial Switched-Mode Power Supplies

Three-Phase Motor Drives

Use Scenario: Primary-side switch in 1–3 kW telecom and server PSUs operating at 100–200 kHz with active clamp or LLC topology.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus; duty-cycle modulated by PWM controller to regulate output voltage.

Use Value: 340 mΩ R_DS(on) and 22 nC Q_g reduce both conduction and switching losses, enabling >95% efficiency at full load.

Use Scenario: Upper-leg IGBT/MOSFET replacement in 7.5–15 kW variable-frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: High-side bridge arm switch in three-phase inverter stage; commutated at 2–8 kHz with dead-time control.

Use Value: 15 V/ns dv/dt rating prevents spurious turn-on during cross-conduction events; 160 mJ E_AS withstands motor inductive kickback.

Photovoltaic String Inverters

High-Voltage DC-DC Converters

Use Scenario: DC optimizer or microinverter DC-AC stage converting 60–150 V PV string voltage to grid-synchronized AC.

IC Role / Device Role / Timing Role: Sine-wave synthesis switch in full-bridge or H-bridge configuration; gated by SPWM or SVM modulation.

Use Value: Low C_oss (23 pF) and Crss (2.6 pF) minimize capacitive losses during zero-voltage switching transitions, extending lifetime under partial shading.

Use Scenario: Isolated DC-DC stage stepping 48 V or 380 V input to 12 V/48 V output in data center power distribution units.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge or active-clamp forward topology operating at 250–500 kHz.

Use Value: 1.47 °C/W R_thJC allows direct mounting to cold plate, supporting >10 W/cm² power density without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15N65M5	Same die, identical electrical specs; differs only in marking and packaging (tube vs. tape-and-reel); pinout and thermal performance identical.	No functional difference - used interchangeably in all ST-designated reference designs and evaluation boards.	Select STF15N65M5 for through-hole prototyping and low-volume builds where tube packaging is preferred.
IPP65R380C7	650 V, 380 mΩ (max), 11 A; higher R_DS(on) but lower Q_g (17 nC); different gate threshold (2–4 V).	Better suited for gate-drive-limited designs; less efficient at high current but faster turn-off in high-di/dt noise environments.	Choose IPP65R380C7 when optimizing for gate driver simplicity over conduction loss, e.g., in cost-sensitive consumer inverters.

Compared with STP15N65M5, STF15N65M5 offers identical performance in a tube-packaged variant ideal for manual assembly, while IPP65R380C7 trades 34 mΩ higher on-resistance for 5 nC lower gate charge - making it preferable where driver strength is constrained but thermal headroom exists.

Availability

STF15N65M5 is available at Aetrix Electronics and suitable for industrial switched-mode power supplies, photovoltaic inverters, and high-voltage DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STF15N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with manufacturing across Europe and Asia.

The MDmesh M5 series targets high-efficiency, high-reliability power conversion in industrial, solar, and server applications - engineered specifically to replace older planar MOSFETs with superior R_DS(on) × Q_g figure-of-merit.

FAQ

What is the maximum safe operating temperature for STF15N65M5?

The STF15N65M5 has a rated junction temperature range of –55 °C to 150 °C. Its absolute maximum continuous drain current drops to 6.9 A at T_C = 100 °C, and thermal derating follows R_thJC = 1.47 °C/W. For reliable 11 A operation, case temperature must remain ≤25 °C - typically achieved using ≥25 cm² copper heatsink area with thermal interface material.

Does STF15N65M5 require a negative gate voltage for turn-off?

No. The device specifies V_GS = 0 V for guaranteed turn-off, with gate threshold voltage ranging from 3 V to 5 V. While –5 V to –10 V gate drive improves noise immunity in high-dv/dt environments, it is not required for functional operation. Gate drive circuits must limit V_GS to ±25 V per absolute maximum ratings.

Can STF15N65M5 replace STP15N65M5 in existing PCB layouts?

Yes - STF15N65M5 and STP15N65M5 share identical TO-220 type A mechanical dimensions, pinout (G-D-S), thermal characteristics, and electrical specifications. The only differences are part marking ("15N65M5" vs "15N65M5F") and packaging format (tube vs. tape-and-reel), making them fully interchangeable on the board level.

Is the body diode suitable for synchronous rectification?

The integrated body diode has t_rr = 247 ns and Q_rr = 2.4 µC at 25 °C, rising to 312 ns and 3 µC at 150 °C. While usable in low-frequency (<50 kHz) synchronous rectification, its recovery charge and softness are inferior to discrete Schottky or SiC diodes. For >100 kHz designs, external diode co-location is recommended to avoid cross-conduction losses.

STF15N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 340mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 816 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF15N65M5 FAQ

1.How can I place an order for STF15N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF15N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF15N65M5 reliable?

The price and inventory of STF15N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF15N65M5 is usually 5 days.

3.What payment methods are accepted for STF15N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF15N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF15N65M5?

STF15N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF15N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF15N65M5?

For technical support, including STF15N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF15N65M5 requirements.

6.How does Aetrix verify that STF15N65M5 is sourced from the original manufacturer or authorized distributors?

All STF15N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF15N65M5 meets industry standards.

7.What is the process for return or replacement of STF15N65M5?

All STF15N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STF15N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF15N65M5 part is unused and in its original packaging.

Return procedure for STF15N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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