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STMicroelectronics STF15N80K5

Part No.:
STF15N80K5
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSTF15N80K5.pdf
Description:
MOSFET N-CH 800V 14A TO220FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,401

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Product details

Overview

STF15N80K5 from STMicroelectronics is an N-channel 800 V, 375 mΩ (max) high-voltage power MOSFET in TO-220FP package, designed for high-efficiency switching applications requiring ultra-low gate charge (32 nC), Zener-protected gate, and 100% avalanche tested ruggedness. It delivers 14 A continuous drain current at TC = 25 °C and supports fast switching in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STF15N80K5 datasheet, STF15N80K5 pinout, STF15N80K5 application, or STF15N80K5 equivalent, key selection criteria include its 800 V breakdown voltage, 32 nC total gate charge, 1.5 V source-drain forward voltage, 445 ns reverse recovery time, and thermal resistance of 3.6 °C/W (junction-to-case) - all critical for high-reliability high-voltage power conversion design.

Technical Context

This MDmesh K5 technology MOSFET uses a proprietary vertical structure to achieve ultra-low RDS(on) and figure-of-merit (FoM), enabling superior power density in hard-switched topologies. Its Zener-protected gate ensures ±30 V VGS robustness, while 100% unclamped inductive avalanche testing (EAS = 150 mJ at TJ = 25 °C) validates ruggedness under transient overloads.

The device features low output capacitance (Coss = 85 pF) and reverse transfer capacitance (Crss = 1.5 pF), supporting high dv/dt immunity (4.5 V/ns) and reduced switching losses. Its integrated body diode exhibits 14 A continuous source-drain current and 37 A peak reverse recovery current, suitable for synchronous rectification and freewheeling roles in bridge configurations.

Key Specifications

Parameter Value and Actual Design Meaning
V(BR)DSS 800 V - Withstands up to 800 V drain-source blocking voltage before avalanche onset, enabling use in 600 V-class mains-input systems with safety margin.
RDS(on) max 375 mΩ - Limits conduction loss to ≤ 7.4 W at 14 A ID, critical for thermal management in compact TO-220FP packages.
Qg 32 nC - Enables fast turn-on/turn-off with low drive power, reducing gate driver stress and improving efficiency above 50 kHz.
ID cont @ TC=25°C 14 A - Specifies maximum continuous DC current under ideal heatsinking, defining baseline current-handling capability.
EAS 150 mJ - Quantifies single-pulse avalanche energy handling, confirming reliability during short-circuit or inductive turn-off events.
VSD 1.5 V - Forward voltage of integrated body diode at 14 A, directly impacting freewheeling losses in non-synchronous topologies.
RthJC 3.6 °C/W - Junction-to-case thermal resistance enables precise heatsink sizing; 190 W power dissipation possible with <25 °C case rise.

Pinout & Package

STF15N80K5 is housed in a TO-220FP (Full-Pak) package with insulated flange, offering enhanced creepage and isolation for high-voltage mounting without additional insulators. The plastic body provides electrical isolation between the drain-connected tab and PCB mount surface.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Controls channel conduction; requires ≤ ±30 V drive; 4.5 Ω gate resistance limits ringing and EMI during switching.
2 (D) Drain High-side switch node; internally connected to metal tab; must be electrically isolated from heatsink unless using conductive mounting.
3 (S) Source Power return path and gate reference; ties to ground or low-side switch node; defines common potential for gate drive circuitry.

Key Features

Feature Design Value
Ultra-low gate charge 32 nC total gate charge reduces driver power requirement and switching transition time, lowering dynamic losses in high-frequency converters.
Zener-protected gate Integrated gate-source Zener clamps transients to ±30 V, eliminating need for external gate protection in noisy industrial environments.
100% avalanche tested Every unit undergoes unclamped inductive switching test to 150 mJ, guaranteeing ruggedness in real-world fault conditions.
Low FoM (RDS(on) × Qg) 11.9 Ω·nC - Optimized trade-off between conduction and switching loss, enabling higher efficiency than prior-generation 800 V MOSFETs.
Fast body diode 445 ns reverse recovery time and 8.2 µC Qrr minimize commutation loss and voltage overshoot during diode turn-off.

Applications

Industrial Motor Drives Server & Telecom SMPS

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side switching element handling 400–600 V DC bus with 10–20 kHz PWM switching.

Use Value: 800 V rating accommodates 1.5× line surge margin; 375 mΩ RDS(on) keeps conduction loss below 7.5 W at 14 A, enabling passive cooling.

Use Scenario: Primary-side switch in LLC resonant converter for 48 V intermediate bus generation in data center PSUs.

IC Role / Device Role / Timing Role: Hard-switched main FET operating at 100–300 kHz with zero-voltage switching assistance.

Use Value: Low Crss (1.5 pF) minimizes capacitive feedthrough and improves ZVS behavior; 32 nC Qg eases gate drive design.

Photovoltaic Inverters Induction Heating Systems

Use Scenario: DC-link switch in string-level boost converters for solar microinverters.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch managing up to 1000 V DC input with burst-mode operation.

Use Value: 100% avalanche rating ensures survival during lightning-induced transients on rooftop arrays; 1.5 V VSD reduces dead-time losses.

Use Scenario: Full-bridge inverter in 2–5 kW domestic induction cooktops.

IC Role / Device Role / Timing Role: 20–50 kHz hard-switched power switch with high di/dt demands (>100 A/µs).

Use Value: 4.5 V/ns dv/dt rating prevents false triggering; 375 mΩ RDS(on) maintains <10 W conduction loss at 12 A RMS load current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP15N80K5 Same die, TO-220 package (non-FP); RthJC = 0.66 °C/W vs. 3.6 °C/W; no insulated flange. Requires external insulator for heatsink mounting; better thermal performance but lower isolation voltage (2.5 kV vs. TO-220FP's rated isolation). Select when maximum thermal efficiency is prioritized and board-level isolation is managed externally.
STW15N80K5 Same die, TO-247 package; RthJC = 0.66 °C/W; higher PTOT (190 W vs. 35 W); larger footprint. Suitable for high-power (>1 kW) designs where heatsink interface dominates thermal path; not compatible with TO-220FP PCB footprints. Select for >100 W continuous output or forced-air-cooled systems requiring lowest possible junction temperature rise.

Compared with STP15N80K5 and STW15N80K5, STF15N80K5 trades thermal performance for reinforced insulation and compact form factor - making it optimal for space-constrained, safety-critical AC/DC adapters and medical-grade power supplies where creepage and isolation compliance are mandatory.

Availability

STF15N80K5 is available at Aetrix Electronics and suitable for industrial motor drives, server SMPS, photovoltaic inverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for STF15N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STF15N80K5 belongs to the MDmesh K5 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-density offline power conversion - emphasizing low FoM, avalanche ruggedness, and system-level reliability in harsh environments.

FAQ

What is the maximum safe operating voltage for STF15N80K5 in continuous DC blocking?

The absolute maximum drain-source voltage (V(BR)DSS) is 800 V at TJ = 25 °C, with derating to ~720 V at TJ = 150 °C per Figure 16. For reliable long-term operation, ST recommends limiting steady-state VDS to ≤ 640 V (80% of rating) to maintain margin against transients and temperature drift.

Does STF15N80K5 require external gate protection?

No - STF15N80K5 integrates a gate-source Zener diode rated for ±30 V, providing built-in protection against ESD and gate overvoltage. External gate resistors (e.g., 10–47 Ω) are still recommended to dampen ringing, but discrete TVS or Zener clamps are unnecessary under normal operating conditions.

How does the TO-220FP package affect thermal design compared to standard TO-220?

The TO-220FP features a fully insulated flange, eliminating need for mica washers or silicone pads. However, its RthJC is 3.6 °C/W - over 5× higher than TO-220's 0.66 °C/W - due to plastic isolation layer. This mandates careful heatsink sizing and limits continuous power to ~35 W unless ambient temperature is tightly controlled.

Can STF15N80K5 replace STP15N80K5 in existing PCB layouts?

No - STF15N80K5 (TO-220FP) and STP15N80K5 (TO-220) share identical pinout (G-D-S), but TO-220FP has longer leads, different lead spacing, and a taller profile. Mechanical interference and solder joint reliability will be compromised without PCB footprint revision; thermal and isolation benefits do not offset layout incompatibility.

STF15N80K5 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
SuperMESH5™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
375mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1100 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
35W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP

STF15N80K5 FAQ

1.How can I place an order for STF15N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF15N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF15N80K5 reliable?

The price and inventory of STF15N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF15N80K5 is usually 5 days.

3.What payment methods are accepted for STF15N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF15N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF15N80K5?

STF15N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF15N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF15N80K5?

For technical support, including STF15N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF15N80K5 requirements.

6.How does Aetrix verify that STF15N80K5 is sourced from the original manufacturer or authorized distributors?

All STF15N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF15N80K5 meets industry standards.

7.What is the process for return or replacement of STF15N80K5?

All STF15N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STF15N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF15N80K5 part is unused and in its original packaging.

Return procedure for STF15N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STF15N80K5 Tags

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