STMicroelectronics STF15NM60N
- Part No.:
- STF15NM60N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STF15NM60N.pdf
- Description:
- MOSFET N-CH 600V 14A TO220FP
- Quantity:
- Payment:

- Shipping:

Inventory:2,471
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STF15NM60N from STMicroelectronics is an N-channel 600 V, 14 A, 0.270 Ω RDS(on) Power MOSFET in TO-220FP package, implementing second-generation MDmesh™ technology for high-efficiency switching converters. It delivers low gate charge (37 nC), low input capacitance (1250 pF), and 100% avalanche-tested ruggedness, enabling use in industrial AC-DC SMPS and PFC stages.
For engineers reviewing the STF15NM60N datasheet, STF15NM60N pinout, STF15NM60N application, or STF15NM60N equivalent, key selection criteria include its 600 V VDSS, 0.270 Ω RDS(on) at VGS = 10 V, 37 nC total gate charge, TO-220FP thermal resistance (Rthj-case = 4.2 °C/W), and unclamped inductive switching capability.
Technical Context
This MOSFET uses ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 600 V breakdown voltage and 14 A continuous drain current (at TC = 25°C) support operation in universal-input offline converters up to 3 kW.
The device features a fast source-drain diode with trr = 390 ns (Tj = 25°C) and Qrr = 5 µC, enabling hard-switched bridge configurations. Gate threshold voltage (2–4 V) and low gate input resistance (6.0 Ω) ensure robust drive compatibility with standard 10 V gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Withstands full rectified 400 VAC line surges in offline applications without breakdown |
| RDS(on) | 0.270 Ω @ VGS = 10 V - Enables <1.5 W conduction loss at 14 A, critical for thermal management in compact designs |
| Qg | 37 nC - Reduces gate drive power and enables higher PWM frequencies (>100 kHz) with standard drivers |
| Ciss | 1250 pF - Low input capacitance minimizes Miller effect and improves switching stability under high dv/dt |
| tr/tf | 14 ns / 30 ns @ RG = 4.7 Ω - Fast edge rates reduce switching transition losses in hard-switched topologies |
| EAS | 300 mJ - Supports reliable unclamped inductive switching in flyback and resonant converters |
| Rthj-case | 4.2 °C/W - Allows 125 W dissipation with ≤50°C case-to-ambient rise, suitable for heatsink-limited industrial enclosures |
Pinout & Package
STF15NM60N is housed in a TO-220FP (Full-Pak) package - a variant of TO-220 with insulated backside, eliminating need for mounting insulator while maintaining mechanical compatibility. The package provides creepage/clearance compliance for reinforced insulation in safety-critical AC-DC systems.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path for load current | Internally connected to exposed tab; electrically tied to PCB ground plane for low-inductance return and thermal conduction |
| 2 (Gate) | Control terminal for channel modulation | High-impedance MOS gate requiring <100 nA leakage; sensitive to ESD; routed away from noisy power traces |
| 3 (Drain) | Main high-side power terminal | Connected to internal die backside; forms primary high-voltage node; requires minimum 2.5 mm creepage to other conductors |
Key Features
| Feature | Design Value |
|---|---|
| Second-generation MDmesh™ structure | Combines low RDS(on) and low Ciss to achieve best-in-class figure-of-merit (RDS(on) × Qg = 10.0 nΩ·F) for 600 V class |
| 100% avalanche rated | Guarantees single-pulse energy handling up to 300 mJ without parameter shift-critical for PFC overvoltage events |
| Low gate input resistance | 6.0 Ω enables stable gate waveform integrity and reduces risk of oscillation during turn-on/turn-off transitions |
| ECOPACK® compliant | Lead-free second-level interconnect meets RoHS and JEDEC JESD97 standards; marked on package and inner box label |
| TO-220FP insulated package | Eliminates need for silicone pad or mica insulator-reducing thermal resistance by ~0.5 °C/W vs. standard TO-220 with insulator |
Applications
| Industrial AC-DC SMPS | Active PFC Stage |
|---|---|
Use Scenario: 1–3 kW open-frame power supply for PLCs and motor drives operating from 85–265 VAC input. IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) boost converter, switching at 65–100 kHz. Use Value: 0.270 Ω RDS(on) and 37 nC Qg jointly reduce total losses below 3.2 W at full load, enabling >94% efficiency without forced air cooling. | Use Scenario: Front-end power factor correction in telecom rectifiers and server PSUs. IC Role / Device Role / Timing Role: High-side switch in interleaved CCM boost stage, synchronized to 100–200 kHz carrier. Use Value: Low Coss (100 pF) and fast tr/tf minimize dead-time losses and improve light-load efficiency across wide input range. |
| Solar Microinverters | UPS Inverter Stage |
Use Scenario: DC-AC H-bridge stage in single-phase 250–500 W microinverters interfacing PV panels to grid. IC Role / Device Role / Timing Role: Low-side switch in unipolar PWM topology, operating at 16–20 kHz with sinusoidal output filtering. Use Value: Avalanche ruggedness (EAS = 300 mJ) withstands inductive kickback from transformer-coupled output filters during fault conditions. | Use Scenario: Half-bridge in-line inverter in 1–2 kVA online UPS systems with battery backup. IC Role / Device Role / Timing Role: High-efficiency switching element in 50/60 Hz fundamental-frequency or high-frequency link topology. Use Value: TO-220FP insulation allows direct mounting to grounded heatsink-simplifying safety certification and reducing BOM count by eliminating insulating hardware. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP15NM60N | Same die, TO-220 (non-insulated) package; Rthj-case = 1.0 °C/W but requires insulator | Preferred where heatsink isolation is already implemented and lower thermal resistance is prioritized | Select when mechanical design accommodates insulator and thermal budget demands sub-1°C/W junction-to-case resistance |
| FDPF15N60 | ON Semiconductor part; 0.30 Ω RDS(on), 42 nC Qg, TO-220FP; slightly higher conduction and switching losses | Valid drop-in for cost-sensitive industrial supplies where 2–3% efficiency margin is acceptable | Choose when cross-manufacturer qualification is required and minor efficiency trade-off is permissible |
Compared with STP15NM60N, STF15NM60N trades 3.2 °C/W higher thermal resistance for simplified mounting and safety compliance; versus FDPF15N60, it delivers measurable improvement in both conduction loss (−10%) and gate drive efficiency (−12% Qg).
Availability
STF15NM60N is available at Aetrix Electronics and suitable for industrial AC-DC SMPS, active PFC stages, solar microinverters, and UPS inverter stages requiring stable component supply and long-term manufacturability.
Supply support for STF15NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.
This device belongs to ST's MDmesh™ Power MOSFET product line-engineered specifically for high-efficiency, high-voltage switching in offline power conversion, with emphasis on minimizing RDS(on) × Qg and ensuring ruggedness in real-world surge and avalanche conditions.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The STF15NM60N supports 9 A continuous drain current at TC = 100°C, as specified in Table 1 of the datasheet. This derating reflects thermal limits of the TO-220FP package and ensures safe operation within SOA boundaries when heatsink temperature remains ≤100°C under sustained load.
Does STF15NM60N require a gate resistor for stable switching?
Yes-a gate resistor is required to control dV/dt and prevent parasitic oscillation. The datasheet specifies switching times using RG = 4.7 Ω. Typical design values range from 2.2 Ω to 10 Ω depending on driver strength and EMI requirements; lower values increase switching speed but raise EMI risk and gate drive loss.
Can STF15NM60N be used in synchronous rectification?
No-it is not optimized for synchronous rectification. Its body diode recovery time (trr = 390 ns) and Qrr (5 µC) are significantly higher than dedicated SR MOSFETs, leading to excessive reverse recovery loss. Use only as a controlled switch in hard- or resonant-switched topologies-not as a freewheeling diode replacement.
Is STF15NM60N suitable for automotive applications?
No-STF15NM60N is not qualified to AEC-Q101 and lacks automotive-grade screening, temperature range extension (−40°C to 175°C), or PPAP documentation. ST explicitly states non-automotive use unless designated "automotive grade"; this part is intended for industrial and commercial power systems only.
STF15NM60N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 299mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 37 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1250 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STF15NM60N FAQ
1.How can I place an order for STF15NM60N through Aetrix?
Please submit a Request for Quotation (RFQ) for STF15NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STF15NM60N reliable?
The price and inventory of STF15NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF15NM60N is usually 5 days.
3.What payment methods are accepted for STF15NM60N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF15NM60N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STF15NM60N?
STF15NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STF15NM60N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STF15NM60N?
For technical support, including STF15NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF15NM60N requirements.
6.How does Aetrix verify that STF15NM60N is sourced from the original manufacturer or authorized distributors?
All STF15NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF15NM60N meets industry standards.
7.What is the process for return or replacement of STF15NM60N?
All STF15NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STF15NM60N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STF15NM60N part is unused and in its original packaging.
Return procedure for STF15NM60N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STF15NM60N Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

