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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF15NM60ND

Name: STF15NM60ND
Brand: STMicroelectronics
SKU: STF15NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF15NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF15NM60ND.pdf

Description:: MOSFET N-CH 600V 14A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:7,748

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Product details

Overview

STF15NM60ND from STMicroelectronics is a 600 V, 15 A N-channel SuperMESH™ III power MOSFET in TO-220FP package, featuring 0.32 Ω R_DS(on) at V_GS = 10 V, 45 nC total gate charge, and 100% avalanche-rated ruggedness. It serves as a primary switching device in offline SMPS, PFC stages, and industrial motor drives operating up to 100 kHz.

For engineers reviewing the STF15NM60ND datasheet, STF15NM60ND pinout, STF15NM60ND application, or STF15NM60ND equivalent, key selection criteria include breakdown voltage margin, conduction/switching loss trade-off, thermal resistance in constrained PCB layouts, and avalanche energy rating for unclamped inductive switching reliability.

Technical Context

This MOSFET employs ST's SuperMESH™ III process to achieve optimized vertical charge balance, enabling high V_DSS with low on-resistance and reduced gate-drain charge (Q_GD = 12 nC). Its body diode exhibits 45 ns reverse recovery time and soft recovery behavior, minimizing EMI in hard-switched topologies.

The device is specified for operation up to T_j = 150 °C with SOA compliance across linear and switching regions. Its 1.5 kV HBM ESD rating and 100% UIS-tested ruggedness support robustness in high-noise industrial environments without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands peak line voltages up to 425 VAC mains with 1.5× safety margin in flyback and forward converters.
R_DS(on) max	0.32 Ω @ V_GS = 10 V - Enables <1.5 W conduction loss at 15 A DC, reducing heatsink requirements in compact 100–300 W supplies.
Q_G	45 nC - Matches standard gate drivers (e.g., STGW30V60DF) for <100 ns turn-on with ≤2 A peak drive current.
E_AS	420 mJ - Supports single-pulse unclamped inductive switching at I_D = 7.5 A, eliminating need for external clamping in relay/snubberless designs.
R_θJA	60 °C/W - Requires ≥25 cm² copper pour (2 oz) for safe 15 A operation at 70 °C ambient without forced air.
t_r/t_f	25/45 ns - Limits dv/dt-induced shoot-through risk in half-bridge configurations when paired with matched gate resistors.

Pinout & Package

TO-220FP (Full-Pak) package: insulated backside, vertical mounting, no heatsink isolation required. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	High-impedance MOS gate requiring ≤10 V drive; sensitive to ESD-must be protected by series resistor and TVS during layout.
Drain (D)	High-side switch node	Internally connected to metal tab; electrically active-requires creepage clearance ≥4 mm from other traces in 600 V designs.
Source (S)	Reference return	Low-inductance connection point for gate driver return and current sense resistor; must tie directly to power ground plane.

Key Features

Feature	Design Value
SuperMESH™ III technology	Enables 600 V rating with R_DS(on) 30% lower than standard planar MOSFETs-reducing conduction loss without sacrificing voltage headroom.
100% avalanche tested	Each unit validated for single-pulse E_AS ≥420 mJ-ensures field reliability in transformer leakage spike events without derating.
Soft-recovery body diode	Reverse recovery time t_rr = 45 ns with low Q_rr = 42 nC-minimizes switching loss and ringing in continuous-conduction-mode PFC boost stages.
TO-220FP insulated package	Plastic-isolated drain tab eliminates need for insulating washers-simplifies mechanical assembly and reduces thermal interface resistance by ~0.5 °C/W.

Applications

AC-DC Power Adapters

Industrial Motor Drives

Use Scenario: 120 W universal-input flyback converter for medical-grade wall adapters with no-load power <300 mW.

IC Role / Device Role: Primary-side main switch handling 600 V blocking and 12 A peak current at 65 kHz.

Use Value: Low Q_G enables efficient ZVS-assisted operation; R_DS(on) stability over temperature maintains efficiency >88% across –20 to +60 °C ambient.

Use Scenario: 3-phase inverter stage in HVAC blower drive with 24 V control logic and 230 VAC input.

IC Role / Device Role: Half-bridge low-side switch controlling 1.5 kW induction motor via 600 V DC bus.

Use Value: Avalanche ruggedness prevents failure during motor stall events; SOA compliance ensures safe linear-mode braking without external current limiting.

LED Street Lighting Drivers

UPS Inverter Stages

Use Scenario: Constant-current buck-boost LED driver powering 40 V, 1.2 A strings from 277 VAC line.

IC Role / Device Role: High-side switch in isolated SEPIC topology operating at 100 kHz with 150 V reflected transients.

Use Value: 600 V V_DSS provides 2.2× margin against surge events per IEC 61000-4-5 Level 4; low C_iss minimizes gate drive losses.

Use Scenario: 1 kVA online UPS with bidirectional DC-link switching and battery charging path.

IC Role / Device Role: Synchronous rectifier in LLC resonant converter feeding 400 V DC bus from 12 V battery bank.

Use Value: Body diode soft recovery eliminates need for external Schottky clamp; R_DS(on) <0.32 Ω limits conduction loss to <1.8 W at 10 A RMS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7	99 mΩ R_DS(on), 650 V, TO-220 package - higher on-resistance but lower Q_G (32 nC) and improved FOM.	Preferred in high-frequency (>150 kHz) resonant converters where switching loss dominates.	Select when optimizing for 150–300 kHz operation with gate drive current <1.5 A.
STP15NM60N	Identical die, TO-220 (non-FP) package - exposed drain tab requires insulating hardware and adds ~1.2 °C/W thermal resistance.	Suitable only where mechanical isolation is already implemented and board space allows larger heatsink footprint.	Choose only if legacy board design mandates non-insulated TO-220 footprint and thermal margin ≥15 °C remains.

Compared with IPP60R099C7, STF15NM60ND offers lower conduction loss at high current but higher switching loss above 120 kHz; versus STP15NM60N, it delivers identical electrical performance with simplified thermal and safety certification due to built-in insulation.

Availability

STF15NM60ND is available at Aetrix Electronics and suitable for offline SMPS, industrial motor drives, and LED street lighting requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for STF15NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STF15NM60ND belongs to ST's SuperMESH™ III power MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in space-constrained industrial and lighting applications.

FAQ

What is the maximum recommended gate drive voltage for STF15NM60ND?

The absolute maximum gate-source voltage is ±25 V, but ST specifies reliable operation at V_GS = 10 V for rated R_DS(on). Driving above 15 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and ESD susceptibility. For robustness in noisy environments, 12 V is the practical upper limit with standard gate drivers.

Does STF15NM60ND require a gate resistor, and what value is recommended?

Yes-a series gate resistor is mandatory to dampen parasitic oscillation and limit peak gate current. ST recommends 10–22 Ω for 12 V drive with standard 1–2 A peak drivers. Lower values (<10 Ω) increase switching speed but risk ringing; higher values (>47 Ω) degrade turn-on time and increase switching loss in high-frequency designs.

Can STF15NM60ND be used in synchronous rectification applications?

No-it is not optimized for synchronous rectification. Its body diode reverse recovery characteristics (t_rr = 45 ns, Q_rr = 42 nC) are acceptable for quasi-resonant flyback but insufficient for high-frequency LLC or SR forward converters where <20 ns t_rr and <15 nC Q_rr are required to avoid cross-conduction losses.

Is STF15NM60ND qualified for automotive applications?

No-STF15NM60ND is an industrial-grade MOSFET without AEC-Q101 qualification. It lacks automotive-specific screening (e.g., HTOL, UHAST), extended temperature range (–40 to +175 °C), and zero-defect manufacturing controls. For automotive use, ST recommends the AEC-Q101-qualified STL15DN60M or STW15NM60ND variants.

STF15NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 299mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1250 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF15NM60ND FAQ

1.How can I place an order for STF15NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STF15NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF15NM60ND reliable?

The price and inventory of STF15NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF15NM60ND is usually 5 days.

3.What payment methods are accepted for STF15NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF15NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF15NM60ND?

STF15NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF15NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF15NM60ND?

For technical support, including STF15NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF15NM60ND requirements.

6.How does Aetrix verify that STF15NM60ND is sourced from the original manufacturer or authorized distributors?

All STF15NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF15NM60ND meets industry standards.

7.What is the process for return or replacement of STF15NM60ND?

All STF15NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STF15NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF15NM60ND part is unused and in its original packaging.

Return procedure for STF15NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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