STMicroelectronics STF15NM65N

Overview

STF15NM65N from STMicroelectronics is an N-channel 650 V, 12 A, 0.35 Ω typ. R_DS(on) Power MOSFET in TO-220FP package, leveraging MDmesh™ II vertical strip technology for ultra-low conduction and switching losses. It delivers high efficiency in high-frequency hard-switched PFC and SMPS stages, with 100% avalanche tested ruggedness and 15 V/ns dv/dt immunity.

For engineers reviewing the STF15NM65N datasheet, STF15NM65N pinout, STF15NM65N application, or STF15NM65N equivalent, this device is selected for high-voltage, medium-current switching where low gate charge (33.3 nC), fast switching (td(on) = 55.5 ns), and robust body diode recovery (Q_rr = 4.7 µC) are critical to system efficiency and reliability.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ II process, combining a high-voltage vertical drift region with optimized strip layout to achieve industry-leading R_DS(on) × Q_g figure-of-merit (11.7 Ω·nC). Its 650 V V_DSS, 12 A I_D rating at T_C = 25 °C, and 4.17 °C/W R_thJC enable compact heatsink designs in offline converters.

The integrated source-drain diode features 12 A continuous current capability, 428 ns t_rr at 25 °C, and soft recovery behavior-critical for reducing EMI in bridge-leg and synchronous rectification topologies. Gate threshold voltage (2–4 V) ensures stable turn-on under wide V_GS margin while maintaining noise immunity.

Key Specifications

Pinout & Package

TO-220FP package: insulated case, single-side heat transfer, 3-pin through-hole mounting with creepage/clearance optimized for 2500 V_RMS isolation between leads and heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP15NM65N, STF15NM65N trades minor R_thJC penalty for guaranteed isolation and simplified thermal design; versus IPP65R190C7, it offers proven avalanche ruggedness at the cost of slightly higher conduction loss-making it preferred for hard-switched, cost-sensitive industrial power supplies.

Availability

STF15NM65N is available at Aetrix Electronics and suitable for server PSUs, industrial AC-DC adapters, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STF15NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline SMPS, PFC, and industrial motor drives where ruggedness and low R_DS(on) × Q_g are decisive.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF15NM65N supports 7.56 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits imposed by its 4.17 °C/W junction-to-case thermal resistance and maximum 150 °C junction temperature. Designers must ensure heatsink design maintains T_C ≤ 100 °C under worst-case ambient and airflow conditions.

Does the STF15NM65N have a fully rated avalanche capability?

Yes-the STF15NM65N is 100% avalanche tested per datasheet Table 4, with a single-pulse avalanche energy rating of 187 mJ at T_J = 25 °C. This capability is validated under defined test conditions (V_DD = 50 V, I_D = I_AR) and enables reliable operation in unclamped inductive switching scenarios without external protection components.

Can the body diode be used for synchronous rectification?

No-the body diode is not optimized for synchronous rectification. While it conducts 12 A continuously and recovers with soft characteristics (Q_rr = 4.7 µC), its forward voltage (1.6 V at 12 A) and reverse recovery time (428 ns) are significantly higher than dedicated Schottky or GaN-based synchronous rectifiers. It is intended for freewheeling and clamping-not active rectification.

What is the gate threshold voltage range and how does it affect drive design?

The gate threshold voltage V_GS(th) is specified from 2 V to 4 V (min to max) at I_D = 250 µA. This wide range necessitates gate drive voltages ≥10 V to ensure full enhancement across process and temperature extremes. A 12 V gate drive is recommended to maintain low R_DS(on) and avoid linear-mode operation during transient conditions.