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STMicroelectronics STF16N50M2

Part No.:
STF16N50M2
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSTF16N50M2.pdf
Description:
MOSFET N-CH 500V 13A TO220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:710

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Product details

Overview

STF16N50M2 from STMicroelectronics is an N-channel 500 V, 240 mΩ typ. (280 mΩ max.), 13 A MDmesh™ M2 Power MOSFET in DPAK (TO-252) package, optimized for high-efficiency flyback and PFC converters in industrial SMPS and AC-DC adapters.

For engineers reviewing the STF16N50M2 datasheet, STF16N50M2 pinout, STF16N50M2 application, or STF16N50M2 equivalent, key selection criteria include its 19.5 nC total gate charge, 44 pF output capacitance, 100% avalanche-tested ruggedness, Zener-protected gate, and dv/dt ruggedness up to 50 V/ns under MOSFET switching conditions.

Technical Context

The STF16N50M2 employs ST's MDmesh M2 vertical superjunction architecture with strip layout, enabling low RDS(on) while maintaining fast switching and low Coss (44 pF at 100 V). Its gate threshold voltage (2–4 V) ensures robust TTL/CMOS drive compatibility.

It integrates a Zener-protected gate structure and is 100% tested for single-pulse avalanche energy (215 mJ at VDD = 50 V), supporting unclamped inductive switching in hard-switched topologies without external snubbers.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 500 V - supports 400 V DC bus designs with 25% margin for surge and ringing
RDS(on) max 280 mΩ at VGS = 10 V, ID = 6.5 A - enables <1.8 W conduction loss at 13 A continuous drain current
Qg 19.5 nC - reduces gate driver power demand and enables >100 kHz operation with low-loss gate driving
Coss 44 pF at VDS = 100 V - minimizes capacitive turn-off loss and improves light-load efficiency
EAS 215 mJ - allows reliable operation in unclamped inductive switching (e.g., PFC boost diode recovery)
dv/dt ruggedness 50 V/ns - prevents spurious turn-on during high-slew-rate commutation in bridge configurations
TJ max 150 °C - supports high-temperature industrial environments with derated current (8 A at TC = 100 °C)

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; thermally enhanced plastic surface-mount outline compliant with JEDEC TO-252-3 standard.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control terminal; accepts 0–10 V logic-level drive; Zener-clamped to ±25 V for ESD protection
2 (TAB/D) Drain (exposed tab) Main high-side power path; electrically and thermally connected to PCB copper pour for heat dissipation (RthJC = 1.14 °C/W)
3 (S) Source Reference node for gate drive and current sensing; connects to ground or low-side switch source in half-bridge

Key Features

Feature Design Value
MDmesh M2 superjunction technology Enables 240 mΩ typ. RDS(on) at 500 V rating-20% lower than prior-generation MDmesh devices
Extremely low gate charge (Qg) 19.5 nC reduces switching losses by ~30% vs. comparable 500 V MOSFETs with Qg > 27 nC
Optimized Coss profile 44 pF at 100 V and 192 pF equivalent over 0–400 V range-supports ZVS-assisted soft switching in resonant topologies
100% avalanche tested Each unit validated for 215 mJ single-pulse avalanche energy-ensures reliability in overvoltage transients without external clamping
Zener-protected gate Integrated gate-body Zener (±25 V rating) eliminates need for external gate protection in noisy industrial environments

Applications

Industrial AC-DC Adapters Server & Telecom SMPS

Use Scenario: 300–500 W universal-input offline flyback converter with active clamp or QR control.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC bus and 13 A peak drain current.

Use Value: Low Coss and 50 V/ns dv/dt ruggedness suppress false triggering during transformer leakage spike recovery.

Use Scenario: 80+ Titanium-rated 1 kW LLC resonant converter primary-side half-bridge switch.

IC Role / Device Role / Timing Role: High-side leg MOSFET operating at 200–300 kHz with zero-voltage switching.

Use Value: 19.5 nC Qg and 44 pF Coss reduce gate drive loss and improve ZVS window margin at light load.

Industrial Motor Drives PFC Boost Stages

Use Scenario: 3-phase IGBT gate driver auxiliary supply with isolated flyback for 24 V bias rail.

IC Role / Device Role / Timing Role: Regulated high-voltage switch in 200 kHz flyback regulating 12–24 V output.

Use Value: 150 °C max junction temperature and 8 A continuous rating at 100 °C case enable compact heatsinkless design.

Use Scenario: Continuous-conduction-mode (CCM) boost PFC stage in 1.5 kW industrial UPS input stage.

IC Role / Device Role / Timing Role: Main boost switch handling 13 A RMS current and 500 V blocking.

Use Value: 215 mJ EAS withstands reverse-recovery stress from fast diodes without snubber circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP16N50M2 TO-220 package; identical die, higher RthJA (60 °C/W vs. 50 °C/W on FR-4), no exposed tab Better suited for through-hole prototyping or lower-power designs where heatsinking is simpler Select when mechanical mounting constraints favor through-hole or when board space permits larger footprint
FDPF16N50T Onsemi SuperFET II; 320 mΩ max RDS(on), 22 nC Qg, no integrated Zener gate protection Requires external gate Zener; slightly higher conduction loss but comparable switching performance Choose if cost sensitivity outweighs gate protection requirement and thermal margin is sufficient

Compared with STP16N50M2, STF16N50M2 offers superior thermal performance via DPAK's low RthJC (1.14 °C/W); versus FDPF16N50T, it delivers lower RDS(on), lower Qg, and built-in gate protection-critical for rugged industrial PFC and adapter designs.

Availability

STF16N50M2 is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server SMPS, and PFC boost stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STF16N50M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The MDmesh M2 product line targets high-efficiency, high-voltage power conversion-specifically engineered for reduced conduction and switching losses in 500–650 V SMPS, PFC, and motor drive applications.

FAQ

Is STF16N50M2 pin-compatible with STD16N50M2?

Yes-STF16N50M2 and STD16N50M2 share identical DPAK (TO-252) pinout (G-D-S), same electrical specifications, and MDmesh M2 die. The difference lies only in packaging variant (STD uses type A2; STF uses type C3 per DS10450 Rev 7), both mechanically compatible with standard DPAK footprints.

What is the maximum recommended gate resistor for 200 kHz operation?

A 4.7 Ω gate resistor is validated per datasheet Figure 13 for 200 kHz switching at VDD = 250 V and ID = 6.5 A. Lower values (≤2.2 Ω) may be used with robust gate drivers to reduce td(on)/td(off), but require verification of overshoot and ringing under actual layout parasitics.

Does STF16N50M2 require a negative gate turn-off voltage?

No-its gate threshold voltage (2–4 V) and ±25 V gate-source rating allow safe operation with 0 V to +10 V or +12 V gate drive. Negative turn-off is unnecessary and not recommended, as the Zener protection is designed for positive/negative transients-not sustained negative bias.

Can STF16N50M2 replace STW20NK50Z in a 500 W PFC design?

No-STW20NK50Z is a 500 V, 20 A Zener-protected SuperFET with different RDS(on) (220 mΩ typ.) and higher Qg (35 nC). STF16N50M2 has lower current rating (13 A) and significantly lower Qg; substitution requires recalculation of thermal margin, gate drive capability, and SOA compliance under peak line conditions.

STF16N50M2 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
19.5 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
710 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220 Full Pack

STF16N50M2 FAQ

1.How can I place an order for STF16N50M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF16N50M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF16N50M2 reliable?

The price and inventory of STF16N50M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF16N50M2 is usually 5 days.

3.What payment methods are accepted for STF16N50M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF16N50M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF16N50M2?

STF16N50M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF16N50M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF16N50M2?

For technical support, including STF16N50M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF16N50M2 requirements.

6.How does Aetrix verify that STF16N50M2 is sourced from the original manufacturer or authorized distributors?

All STF16N50M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF16N50M2 meets industry standards.

7.What is the process for return or replacement of STF16N50M2?

All STF16N50M2 units undergo pre-shipment inspection (PSI). If there is an issue with STF16N50M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF16N50M2 part is unused and in its original packaging.

Return procedure for STF16N50M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STF16N50M2 Tags

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