STMicroelectronics STF16N60M2

Overview

STF16N60M2 from STMicroelectronics is an N-channel 600 V, 12 A MDmesh™ M2 Power MOSFET in TO-220FP package, featuring 0.28 Ω typ. R_DS(on), 19 nC total gate charge, and 100% avalanche tested. It serves as a high-voltage switching device in offline SMPS primary-side power stages, PFC circuits, and industrial motor drives requiring fast switching and low conduction loss.

For engineers reviewing the STF16N60M2 datasheet, STF16N60M2 pinout, STF16N60M2 application, or STF16N60M2 equivalent, key selection criteria include V_DS = 600 V, R_DS(on) ≤ 0.32 Ω, Q_g = 19 nC, C_oss = 38 pF, and T_j max = 150 °C - all critical for hard-switched flyback, LLC resonant, and active clamp forward topologies.

Technical Context

This MOSFET employs ST's MDmesh™ M2 strip-based silicon process with optimized vertical structure to reduce specific on-resistance and output capacitance energy (E_oss). Its low C_oss (38 pF) and C_oss,eq (140 pF) enable efficient zero-voltage switching (ZVS) in resonant converters.

The device integrates Zener-protected gate oxide and passes unclamped inductive switching (UIS) testing at I_AR = 2.9 A and E_AS = 130 mJ. Its dv/dt ruggedness of 50 V/ns supports reliable operation in noisy high-dV/dt environments like three-phase inverters and rectifier stages.

Key Specifications

Pinout & Package

STF16N60M2 is housed in a TO-220FP (Full-Pak) package: insulated plastic case with integral heatsink tab, non-isolated drain connection to tab, and 3-pin vertical lead configuration. The package provides 2500 V_RMS insulation between leads and heatsink, enabling direct mounting to shared thermal planes without isolation pads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP16N60M2, STF16N60M2 trades 0.5 °C/W higher junction-to-case thermal resistance for guaranteed 2500 V_RMS isolation and simplified thermal design. Against IPP60R190C7, it offers superior avalanche ruggedness and lower C_oss at the expense of slightly higher conduction loss above 8 A.

Availability

STF16N60M2 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, UPS inverters, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and certified avalanche performance.

Supply support for STF16N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh™ M2 product line targets high-efficiency, high-reliability power conversion systems - specifically engineered for 600–650 V SMPS, PFC, and inverter applications demanding low R_DS(on), low gate charge, and proven avalanche capability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF16N60M2 supports 7.6 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating is thermally limited by R_thj-case = 5 °C/W and T_j max = 150 °C, allowing 50 °C junction-to-case rise at full current. Derating curves in Figure 2 confirm safe operation within SOA up to this point.

Does STF16N60M2 require external gate protection?

No external gate protection is required under normal operation. The device integrates Zener protection on the gate oxide with ±25 V absolute maximum V_GS rating. However, a 10–22 Ω series gate resistor is recommended to dampen ringing and limit peak gate current during fast switching transitions.

Can STF16N60M2 replace STP16N60M2 in existing designs?

Yes, STF16N60M2 is a drop-in replacement for STP16N60M2 in terms of pinout and electrical specs, but its TO-220FP package adds 2500 V_RMS insulation and increases R_thj-case from 4.5 to 5.0 °C/W. Mechanical redesign may be needed if heatsink isolation was previously handled externally.

What is the typical reverse recovery charge of the integrated body diode?

The typical reverse recovery charge (Q_rr) is 3.25 µC at T_j = 25 °C and 4.8 µC at T_j = 150 °C, measured under ISD = 12 A, di/dt = 100 A/µs, and V_DD = 60 V conditions (Table 8). This low Q_rr minimizes commutation loss in synchronous rectification and freewheeling paths.