STMicroelectronics STF16N60M6

Overview

STF16N60M6 from STMicroelectronics is an N-channel 600 V, 12 A MDmesh M6 superjunction power MOSFET in TO-220FP package, featuring 260 mΩ typ. R_DS(on), 16.7 nC total gate charge, and 100% avalanche tested operation. It delivers low switching losses and high dv/dt ruggedness (50 V/ns) for hard-switched PFC and SMPS primary-side applications.

For engineers reviewing the STF16N60M6 datasheet, STF16N60M6 pinout, STF16N60M6 application, or STF16N60M6 equivalent, this device is selected for high-efficiency 600 V AC-DC converters where reduced conduction loss, fast diode recovery (210 ns), and robust unclamped inductive switching are critical design requirements.

Technical Context

The STF16N60M6 implements ST's MDmesh M6 technology, combining optimized cell pitch and deep-trench charge compensation to achieve 260 mΩ typ. R_DS(on) at 600 V with low C_iss (575 pF) and C_rss (3 pF). Its Zener-protected gate ensures ±25 V V_GS tolerance and stable threshold voltage (3.25–4.75 V) across temperature.

Designed for continuous conduction mode (CCM) and transition-mode (TM) PFC stages, it supports 32 A pulsed drain current and withstands 2.5 kV RMS insulation voltage between leads and heatsink. The integrated source-drain diode exhibits 1.6 V forward drop at 12 A and 3.2 µC Q_rr at 150 °C - enabling reliable snubberless operation in high-frequency topologies.

Key Specifications

Pinout & Package

TO-220FP (Type B) package: insulated tab, vertical mounting, 3-pin through-hole outline with integral heatsink interface. Thermal resistance R_thJC = 5 °C/W enables 25 W dissipation at T_C = 25 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V superjunction MOSFET applications.

Compared with IPP60R190C7 and STP16N60DM6, the STF16N60M6 trades 30 mΩ higher R_DS(on) for guaranteed 2.5 kV insulation, lower Q_g, and TO-220FP mechanical compatibility - making it optimal for space-constrained, safety-critical AC-DC designs requiring certified isolation.

Availability

STF16N60M6 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, LED drivers, and solar microinverters requiring stable component supply, long-lifecycle support, and certified insulation performance.

Supply support for STF16N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

The MDmesh M6 product line targets high-efficiency, high-voltage power conversion systems - specifically engineered to reduce both conduction and switching losses in 500–800 V SMPS, PFC, and inverter topologies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF16N60M6 supports 7.6 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12069 Rev 2. This derating reflects thermal limitations of the TO-220FP package (R_thJC = 5 °C/W) and ensures safe operation within the SOA boundary at elevated temperatures.

Does the STF16N60M6 include an integrated body diode, and what are its key recovery parameters?

Yes, it integrates a fast-recovery source-drain diode with 1.6 V forward voltage at 12 A and 210 ns reverse recovery time (T_J = 25 °C). At 150 °C, trr increases to 310 ns and Q_rr rises to 3.2 µC - values critical for calculating freewheeling losses in hard-switched topologies.

Can the STF16N60M6 be used in avalanche mode, and what is its rated single-pulse energy?

Yes - it is 100% avalanche tested with a rated single-pulse avalanche energy (E_AS) of 110 mJ at T_J = 25 °C, ID = 2.5 A, and V_DD = 50 V. This capability enables robust operation during transient overloads without external clamping components.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) ranges from 3.25 V to 4.75 V at 25 °C (Table 4), and decreases linearly to ~0.7× nominal at 150 °C (Figure 9). This negative temperature coefficient ensures inherent current sharing stability in parallel configurations and predictable turn-on behavior across industrial temperature ranges.