STMicroelectronics STF16N65M2

Overview

STF16N65M2 from STMicroelectronics is an N-channel 650 V, 11 A MDmesh M2 Power MOSFET in TO-220FP package with 320 mΩ typical R_DS(on), 19.5 nC total gate charge, and 360 mJ single-pulse avalanche energy-designed for high-efficiency AC-DC and DC-DC converters operating at >100 kHz switching frequencies.

For engineers reviewing the STF16N65M2 datasheet, STF16N65M2 pinout, STF16N65M2 application, or STF16N65M2 equivalent, key selection criteria include its low C_oss (32 pF), Zener-protected gate, 100% avalanche tested ruggedness, and insulated package enabling direct heatsink mounting without isolation hardware.

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and optimized vertical structure to simultaneously reduce conduction loss (R_DS(on)) and switching loss (Q_gd/Q_g ratio of 0.43). Its 189 pF C_oss,eq over 0–520 V enables predictable soft-switching behavior in resonant topologies.

The device integrates a fast-recovery body diode (t_rr = 342 ns at 25 °C) with low Q_rr (3.5 µC) and I_RRM = 20.4 A, supporting synchronous rectification and hard-switched PFC stages where diode reverse recovery stress must be minimized.

Key Specifications

Pinout & Package

TO-220FP (Type B) package with insulated tab: electrically isolated metal backside rated for 2.5 kV RMS insulation; compact 10.4 mm height; footprint compatible with standard TO-220 heatsink clips.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP16N65M2, STF16N65M2 trades 0.5 °C/W higher junction-to-case thermal resistance for 2.5 kV isolation-enabling safer, simpler mechanical integration. Versus IPP65R190C7, it offers lower Q_g and built-in gate protection at the cost of 40 mΩ higher R_DS(on), favoring reliability-critical 24/7 operation.

Availability

STF16N65M2 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STF16N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.

This device belongs to ST's MDmesh™ M2 superjunction MOSFET product line-engineered specifically for high-efficiency, high-frequency switched-mode power supplies demanding low switching loss and robust avalanche capability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF16N65M2 supports 6.9 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10678 Rev 2. This derating reflects thermal limitations of the TO-220FP package, not device degradation. At this condition, R_DS(on) rises to ~470 mΩ due to temperature coefficient, resulting in ~22 W conduction loss-requiring ≥100 cm² heatsink area with forced air.

Does the body diode support synchronous rectification in LLC resonant converters?

Yes-the integrated body diode has t_rr = 342 ns and Q_rr = 3.5 µC at 25 °C, with I_RRM = 20.4 A, making it suitable for synchronous rectification in sub-200 kHz LLC topologies. However, its V_SD = 1.6 V at 11 A is higher than discrete Schottky diodes, so efficiency gain depends on duty cycle and frequency-dependent switching loss trade-offs.

Can STF16N65M2 replace STW16N65M2 in existing designs?

No-STW16N65M2 uses TO-247 package with lower R_thJC (3.5 °C/W) and higher P_TOT (190 W), while STF16N65M2 (TO-220FP) is limited to 25 W at T_C = 25 °C. Direct replacement would cause thermal runaway unless heatsink area is increased by ≥3× and PCB copper pour is expanded to handle 5 °C/W junction-to-ambient rise.

Is the 2.5 kV V_ISO rating certified to any safety standard?

The 2.5 kV RMS insulation rating is verified per IEC 60747-5-2 for basic insulation, with test duration of 1 second at T_C = 25 °C. It meets requirements for reinforced insulation in EN 62368-1 Class II equipment but does not constitute UL/CSA recognition-designers must validate system-level creepage/clearance and perform end-product certification.