STMicroelectronics STF16N65M5

Overview

STF16N65M5 from STMicroelectronics is an N-channel 650 V, 12 A Power MOSFET based on MDmesh M5 vertical process technology in TO-220FP package, featuring 230 mΩ typ. R_DS(on), 15 V/ns dv/dt capability, and 100% avalanche tested. It delivers high-efficiency switching for offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STF16N65M5 datasheet, STF16N65M5 pinout, STF16N65M5 application, or STF16N65M5 equivalent, this page provides verified electrical ratings, thermal data, gate charge behavior, diode recovery metrics, and real-world SOA boundaries - all critical for hard-switched 400–600 V systems.

Technical Context

This device employs ST's MDmesh M5 trench-gated superjunction architecture to achieve ultra-low R_DS(on) × Q_g figure-of-merit (230 mΩ × 31 nC), enabling high-frequency operation up to 100 kHz in continuous conduction mode PFC. Its 150 °C max junction temperature and 2.5 kV isolation rating support robust operation in ungrounded heatsink configurations.

The integrated body diode exhibits 300 ns typical reverse recovery time (T_J = 25 °C) and 3.5 µC Q_rr, with soft recovery characteristics validated under 400 V/12 A inductive load conditions. Gate threshold voltage is tightly distributed (3–5 V), ensuring stable turn-on across industrial temperature range.

Key Specifications

Pinout & Package

TO-220FP (Type B) package with insulated tab: compact footprint, vertical mounting, and creepage/clearance optimized for high-voltage isolation. Tab is electrically connected to drain (D).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP16N65M5, STF16N65M5 trades 3.6 °C/W higher thermal resistance for 2.5 kV isolation and safer board-level assembly; versus IPP65R280C7, it offers proven avalanche ruggedness and lower Q_gd/Q_gs for cleaner hard-switching transitions.

Availability

STF16N65M5 is available at Aetrix Electronics and suitable for industrial motor drives, photovoltaic inverters, and telecom SMPS requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STF16N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This part belongs to the MDmesh™ M5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 400–650 V offline power conversion systems.

FAQ

What is the maximum safe operating area (SOA) for STF16N65M5 at 100 °C case temperature?

At T_C = 100 °C, the SOA is bounded by R_DS(on) limit up to 100 V V_DS, then transitions to thermal limit: 7.3 A continuous current at V_DS ≤ 12 V, de-rating linearly to 0.7 A at 650 V. Single-pulse SOA supports 48 A for 100 µs at 400 V, per Figure 1 in DS5989 Rev 5.

Can STF16N65M5 replace STF20N65M5 in existing designs?

No - STF20N65M5 has 20 A I_D rating and 200 mΩ R_DS(on); STF16N65M5 is rated for 12 A and 279 mΩ max. Substitution would cause 44 % higher conduction loss at 12 A and exceed safe operating area above 7.3 A at elevated temperatures.

Is the TO-220FP tab electrically isolated from the PCB mounting surface?

Yes - the TO-220FP (Type B) package features an insulated tab rated for 2.5 kV RMS isolation between all three leads and external heatsink. No additional insulating washer is required when mounted to grounded metal heatsinks, provided creepage distance ≥5 mm is maintained.

What gate resistor value is recommended for 100 kHz hard-switched operation?

A 4.7 Ω gate resistor is validated in the datasheet (Table 6) for V_DD = 400 V, I_D = 8 A, delivering 25 ns voltage delay and 6 ns current fall time. For 100 kHz operation with 50 % duty cycle, this yields <1.5 W gate drive loss and maintains <10 V/ns dv/dt-induced Miller current.