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STMicroelectronics STF16N90K5

Part No.:
STF16N90K5
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSTF16N90K5.pdf
Description:
MOSFET N-CH 900V 15A TO220FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:30

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Product details

Overview

STF16N90K5 from STMicroelectronics is a 900 V, 15 A N-channel MDmesh K5 Power MOSFET in TO-220FP package, featuring 280 mΩ typ. RDS(on), 29.7 nC total gate charge, and 100% avalanche tested performance for high-voltage switching in industrial SMPS and PFC stages.

For engineers reviewing the STF16N90K5 datasheet, STF16N90K5 pinout, STF16N90K5 application, or STF16N90K5 equivalent, key selection criteria include ultra-low gate charge (29.7 nC), Zener-protected gate (±30 V), 2.5 kV insulation rating, and rugged dv/dt capability (50 V/ns) in high-noise HVDC environments.

Technical Context

This device implements ST's MDmesh K5 vertical superjunction architecture to achieve industry-leading figure of merit (RDS(on) × Qg = 8.3 mΩ·nC), enabling high-efficiency operation at 70–100 kHz in hard-switched 800 V DC bus converters.

Its integrated back-to-back gate-source Zener diodes (V(BR)GSO = 30 V) eliminate external clamping components, while 100% unclamped inductive switching (UIS) testing up to 380 mJ ensures robustness in flyback and resonant topologies under transient overloads.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 900 V - supports 800 V DC bus designs with 12.5% margin for voltage overshoot in telecom/industrial HV systems
RDS(on) max 330 mΩ - enables <1.2 W conduction loss at 15 A continuous drain current (TC = 25 °C)
Qg 29.7 nC - reduces gate drive power and allows use of low-cost 1-A peak drivers in 75 kHz PFC controllers
VISO 2.5 kV RMS - permits direct mounting on insulated heatsinks without additional isolation hardware
EAS 380 mJ - sustains single-pulse avalanche energy at TJ = 25 °C, critical for no-fuse protection in UPS inverters
dv/dt ruggedness 50 V/ns - prevents false turn-on during fast voltage transients in motor drives and EV chargers
TJ range −55 to 150 °C - qualified for extended thermal cycling in outdoor solar string inverters and railway traction converters

Pinout & Package

TO-220FP package: isolated tab (no electrical connection), vertical mounting orientation, 3-pin through-hole configuration with internal heat sink contact via metal tab. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.

Pin/Terminal Circuit Role Design Meaning
G (Pin 1) Gate control input Accepts 0–10 V logic-level drive; Zener-protected to ±30 V; requires ≤4.9 Ω series gate resistance for optimal switching
D (Pin 2) High-side drain node Connected to 900 V DC bus; electrically tied to metal tab; must be isolated from heatsink unless using insulating pad
S (Pin 3) Source return path Reference for gate drive and current sensing; low-inductance layout essential to avoid shoot-through in half-bridge configurations

Key Features

Feature Design Value
MDmesh K5 superjunction structure Reduces RDS(on) × area by 40% vs prior K3 generation, enabling smaller heatsinks in 3 kW server PSUs
Ultra-low Qg/Qgd ratio Qgd/Qg = 60% - improves Miller immunity and enables stable operation with 50 V/ns dv/dt in LLC resonant converters
Zener-protected gate Integrated ±30 V bidirectional clamp eliminates need for external TVS, reducing BOM count and PCB area in DIN-rail mounted PLCs
100% UIS tested Guarantees minimum 380 mJ single-pulse avalanche energy, removing derating uncertainty in unregulated offline SMPS
Enhanced diode recovery Qrr = 8.13 µC at 25 °C - cuts reverse recovery loss by 22% vs comparable 900 V MOSFETs, improving efficiency in boost PFC stages

Applications

Industrial SMPS Telecom Rectifiers

Use Scenario: 3 kW, 800 V DC output telecom rectifier operating at 75 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling full DC bus voltage and delivering regulated output via transformer coupling.

Use Value: 280 mΩ RDS(on) limits conduction loss to 0.63 W at 15 A, while 29.7 nC Qg enables clean 100 ns turn-off with minimal gate driver dissipation.

Use Scenario: Hot-swap enabled 48 V distributed power system with 800 V intermediate bus and digital control.

IC Role / Device Role / Timing Role: Input stage switch in dual-active-bridge (DAB) isolated DC-DC converter managing bidirectional power flow.

Use Value: 2.5 kV insulation withstand allows direct heatsink mounting without isolation pads, reducing thermal resistance by 1.2 °C/W in compact 1U rack units.

Solar String Inverters Railway Traction Converters

Use Scenario: 5 kW string inverter with MPPT stage feeding 900 V DC link before three-phase inverter stage.

IC Role / Device Role / Timing Role: Boost switch in interleaved PFC front-end, operating in continuous conduction mode at 100 kHz.

Use Value: 458 ns trr and 8.13 µC Qrr minimize diode commutation loss, increasing PFC efficiency from 97.1% to 97.6% at full load.

Use Scenario: Auxiliary power supply in 1.5 kV DC railway traction converter, powering control electronics from overhead line.

IC Role / Device Role / Timing Role: Switching element in flyback-derived auxiliary supply rated for 1500 V isolation and −40 to +85 °C ambient.

Use Value: −55 to 150 °C TJ range and 100% UIS qualification ensure reliable startup and fault tolerance during regenerative braking surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STW16N90K5 Same die, TO-247 package; Rthj-case = 2.5 °C/W vs 4.1 °C/W; 20% higher ID rating (16 A) Better thermal performance in forced-air cooled 5 kW designs; larger footprint incompatible with TO-220FP board layouts Select when thermal budget is constrained and PCB real estate allows TO-247 mounting
IPP60R190C7 650 V rating, 190 mΩ RDS(on), 33 nC Qg; Infineon CoolMOS C7 technology Not suitable for 800 V bus; requires derating to 520 V max; lower gate charge but insufficient voltage margin Only viable if system redesign lowers DC bus to ≤600 V and prioritizes lowest possible Qg

Compared with STW16N90K5, STF16N90K5 trades 1.6 °C/W higher junction-to-case thermal resistance for TO-220FP compatibility and lower cost; versus IPP60R190C7, it delivers essential 900 V rating and avalanche ruggedness at the expense of slightly higher Qg, making it the only drop-in solution for legacy 800 V industrial platforms.

Availability

STF16N90K5 is available at Aetrix Electronics and suitable for industrial SMPS, telecom rectifiers, and solar string inverters requiring stable component supply across multi-year production cycles.

Supply support for STF16N90K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STF16N90K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for >700 V DC bus applications demanding high power density, low switching loss, and field-proven avalanche reliability in mission-critical infrastructure.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF16N90K5 supports 9 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS13052. This derating reflects thermal limitations of the TO-220FP package (Rthj-case = 4.1 °C/W) and ensures safe operation within the SOA boundary at elevated ambient temperatures in enclosed enclosures.

Does STF16N90K5 require external gate protection?

No external gate protection is required due to integrated back-to-back Zener diodes rated at ±30 V (V(BR)GSO). These provide robust ESD immunity and transient clamping, eliminating the need for discrete TVS diodes in standard industrial drive and power supply designs per datasheet Section 8.

How does the 2.5 kV insulation rating impact heatsink mounting?

The 2.5 kV RMS insulation withstand voltage allows direct mechanical mounting to an uninsulated heatsink without electrical isolation pads-provided the heatsink remains at earth potential. This reduces thermal resistance by ~1.0 °C/W compared to insulated mounting, simplifying thermal design in DIN-rail mounted power supplies.

What is the typical reverse recovery charge of the body diode?

The body diode exhibits Qrr = 8.13 µC at TJ = 25 °C and Qrr = 9.2 µC at TJ = 150 °C (Table 7), measured under ISD = 15 A, di/dt = 100 A/µs, and VDD = 60 V. This low value minimizes commutation losses in synchronous rectification and PFC boost stages.

STF16N90K5 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™ DK5
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
900 V
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
330mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
29.7 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1027 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
30W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP

STF16N90K5 FAQ

1.How can I place an order for STF16N90K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF16N90K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF16N90K5 reliable?

The price and inventory of STF16N90K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF16N90K5 is usually 5 days.

3.What payment methods are accepted for STF16N90K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF16N90K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF16N90K5?

STF16N90K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF16N90K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF16N90K5?

For technical support, including STF16N90K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF16N90K5 requirements.

6.How does Aetrix verify that STF16N90K5 is sourced from the original manufacturer or authorized distributors?

All STF16N90K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF16N90K5 meets industry standards.

7.What is the process for return or replacement of STF16N90K5?

All STF16N90K5 units undergo pre-shipment inspection (PSI). If there is an issue with STF16N90K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF16N90K5 part is unused and in its original packaging.

Return procedure for STF16N90K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STF16N90K5 Tags

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