STMicroelectronics STF16NM50N

Overview

STF16NM50N from STMicroelectronics is an N-channel 500 V, 0.26 Ω R_DS(on), 15 A MDmesh™ II Power MOSFET in TO-220FP package, designed for high-efficiency switching converters operating up to 150 °C junction temperature, with 100% avalanche tested ruggedness and low gate charge (38 nC) enabling fast hard-switching in SMPS and PFC stages.

For engineers reviewing the STF16NM50N datasheet, STF16NM50N pinout, STF16NM50N application, or STF16NM50N equivalent, key selection criteria include its 500 V V_DS, 0.26 Ω R_DS(on) at 10 V_GS, 38 nC total gate charge, 15 A continuous drain current at T_C = 25 °C, and TO-220FP thermal resistance of 4.2 °C/W (junction-to-case), critical for thermally constrained industrial power supplies.

Technical Context

This MDmesh™ II MOSFET uses a proprietary vertical strip structure that minimizes specific on-resistance and gate charge simultaneously. Its 500 V rating and 15 A continuous current capability are defined under strict thermal limits: T_j ≤ 150 °C, with R_thj-case = 4.2 °C/W ensuring reliable conduction in forced-air-cooled TO-220FP mounting.

The device features low C_iss (1200 pF), C_oss (80 pF), and C_rss (10 pF) at V_DS = 50 V, f = 1 MHz, enabling high-frequency operation with reduced switching losses. Its 1.3 V source-drain diode forward voltage at 15 A and 400 ns reverse recovery time support synchronous rectification and inductive load commutation.

Key Specifications

Pinout & Package

STF16NM50N is housed in TO-220FP (Full-Pak) package: insulated plastic case with integral heatsink tab, 3-pin single-ended leadframe, and creepage/clearance optimized for high-voltage isolation. The package provides 2500 V_RMS insulation between leads and heatsink per IEC 60747-17.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 500 V power MOSFET applications.

Compared with STP16NM50N, STF16NM50N trades 3.2 °C/W higher junction-to-case thermal resistance for guaranteed 2500 V isolation - essential in medical and industrial AC-DC supplies. Versus IPP60R099C6, it offers lower gate charge and smaller footprint at the cost of current and voltage headroom.

Availability

STF16NM50N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server AC-DC front-ends, and solar microinverter DC-DC stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STF16NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for automotive, industrial, and consumer markets.

STF16NM50N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications including PFC, resonant converters, and industrial motor drives where low R_DS(on) × Q_g is critical.

FAQ

What is the maximum safe operating temperature for STF16NM50N?

The absolute maximum junction temperature is 150 °C, with derated continuous drain current of 9.4 A at T_C = 100 °C. Thermal design must ensure junction temperature remains below this limit under worst-case ambient and power dissipation conditions, using the specified R_thj-case = 4.2 °C/W and accounting for interface thermal resistance.

Does STF16NM50N require a gate resistor, and what value is recommended?

Yes - a series gate resistor is required to control dv/dt and suppress oscillation. For typical 1-A gate drivers and 100 kHz operation, a 4.7 Ω resistor is validated in the datasheet (Table 7). Lower values (2.2–3.3 Ω) may be used for faster switching if gate drive strength and EMI permit; values >10 Ω increase switching losses unnecessarily.

Can STF16NM50N replace STP16NM50N in an existing TO-220 layout?

No - although electrically identical, STF16NM50N uses TO-220FP with insulated tab and different mechanical dimensions (e.g., L = 14.2–14.8 mm vs. STP's 13–14 mm). Mounting hole alignment, heatsink clearance, and creepage distance differ; PCB redesign and mechanical validation are required for replacement.

Is STF16NM50N suitable for synchronous rectification?

No - it is a standard N-channel enhancement-mode MOSFET optimized for primary-side switching, not secondary-side synchronous rectification. Its body diode recovery characteristics (t_rr = 400 ns, Q_rr = 5 µC) are insufficient for high-frequency SR; dedicated low-Q_rr, logic-level SR MOSFETs like STP16LF60L are recommended instead.