STMicroelectronics STF17N80K5

Overview

STF17N80K5 from STMicroelectronics is an N-channel 800 V, 14 A high-voltage Power MOSFET in TO-220FP package, fabricated with MDmesh K5 vertical structure. It delivers 290 mΩ typical R_DS(on), 26 nC total gate charge, and 100% avalanche-tested ruggedness for high-efficiency switching in offline SMPS and industrial inverters.

For engineers reviewing the STF17N80K5 datasheet, STF17N80K5 pinout, STF17N80K5 application, or STF17N80K5 equivalent, key selection criteria include its ultra-low FoM (R_DS(on) × Q_g = 7.54 Ω·nC), Zener-protected gate, 2.5 kV insulation rating, and validated 340 mJ single-pulse avalanche energy at T_J = 25 °C.

Technical Context

This device employs ST's MDmesh K5 proprietary vertical superjunction architecture to simultaneously reduce conduction loss and switching loss. Its 866 pF input capacitance, 0.42 pF reverse transfer capacitance, and 14.8 ns turn-on delay enable fast, low-loss hard-switching up to 100 kHz in PFC and LLC resonant converters.

The integrated body diode features 439 ns reverse recovery time at 14 A/100 A/µs and 6.37 µC Q_rr at 25 °C - critical for minimizing commutation losses and EMI in bridge-leg configurations. The 4.2 °C/W junction-to-case thermal resistance supports reliable operation at 9 A continuous current under 100 °C case temperature.

Key Specifications

Pinout & Package

Supplied in TO-220FP (Type B) package: insulated tab, vertical mounting, 3.2 mm lead diameter, 10.4 mm height, and 30.6 mm length. Thermal pad electrically connected to drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STW17N80K5 and IPP60R190C7, STF17N80K5 uniquely balances 800 V rating, TO-220FP insulation, and industry-leading FoM - making it optimal for space-constrained 600–800 V offline converters where safety certification and thermal footprint are critical.

Availability

STF17N80K5 is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, photovoltaic inverters, and industrial UPS systems requiring stable component supply and long-term lifecycle support.

Supply support for STF17N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The MDmesh K5 Power MOSFET product line targets high-efficiency, high-density offline power conversion - specifically engineered for 600–900 V applications demanding low R_DS(on), low Q_g, and robust avalanche performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF17N80K5 supports 9 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10971 Rev 3. This derating reflects thermal limits imposed by the 4.2 °C/W junction-to-case resistance and 150 °C maximum junction temperature, ensuring safe operation within SOA boundaries under sustained load.

Does the TO-220FP package provide electrical isolation between leads and heatsink?

Yes - the TO-220FP (Type B) package features an electrically insulated metal tab rated for 2.5 kV RMS insulation withstand voltage between all three leads and the external heatsink, per Table 1. This eliminates the need for insulating pads or shoulder washers in grounded-heatsink configurations.

How does the Zener protection function on the gate terminal?

The integrated gate-source Zener diode clamps transient voltages to ±30 V, protecting against ESD events and gate drive overshoot. It operates passively without external components and is verified per AEC-Q101 stress testing, enabling robust gate drive design in noisy industrial environments.

Is the body diode suitable for synchronous rectification in LLC resonant converters?

No - the body diode exhibits 439 ns t_rr and 6.37 µC Q_rr at 25 °C, which causes significant switching loss and voltage spikes in high-frequency zero-voltage switching. External Schottky or GaN FETs are recommended for synchronous rectification above 200 kHz.