STMicroelectronics STF18N60DM2

Overview

STF18N60DM2 from STMicroelectronics is a high-voltage N-channel MDmesh DM2 Power MOSFET in TO-220FP package, rated 600 V V_DS, 0.260 Ω typ. R_DS(on), and 12 A continuous drain current at T_case = 25 °C. It integrates a fast-recovery body diode (t_rr = 125 ns, Q_rr = 0.675 µC), low gate charge (Q_g = 20 nC), and 100% avalanche tested ruggedness-designed for ZVS phase-shift converters and full-bridge SMPS.

For engineers reviewing the STF18N60DM2 datasheet, STF18N60DM2 pinout, STF18N60DM2 application, or STF18N60DM2 equivalent, key selection criteria include dv/dt ruggedness (50 V/ns), C_oss,eq (80 pF), thermal resistance (R_thj-case = 5 °C/W), and Zener-protected gate, critical for high-reliability industrial power conversion designs.

Technical Context

This MOSFET employs ST's MDmesh DM2 silicon process optimized for high-voltage switching with minimized recovery losses. Its fast-recovery body diode enables zero-voltage switching in resonant topologies, while extremely low Q_g (20 nC) and C_iss (800 pF) reduce driver loss and improve switching efficiency at 100–500 kHz.

The device features intrinsic Zener gate protection, 2.5 kV insulation withstand voltage (RMS), and guaranteed 50 V/ns MOSFET dv/dt ruggedness under V_DS ≤ 480 V-enabling robust operation in noisy industrial bus environments without external gate clamping.

Key Specifications

Pinout & Package

TO-220FP package: insulated plastic case with integral heat sink tab (pin 2), no metal tab isolation required. Mounting screw hole centered on tab; leads bent for PCB through-hole mounting. ECOPACK2 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP18N60DM2, STF18N60DM2 offers safer thermal mounting via insulated tab; compared with IPP60R190C6, it delivers lower gate drive burden and proven dv/dt immunity-making it optimal for space-constrained, noise-prone industrial SMPS where reliability trumps marginal conduction gain.

Availability

STF18N60DM2 is available at Aetrix Electronics and suitable for industrial SMPS, ZVS phase-shift converters, motor drive inverters, and UPS output stages requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STF18N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh DM2 series-engineered specifically for high-efficiency, high-frequency switched-mode power supplies where low Q_rr, low R_DS(on), and avalanche ruggedness are mandatory.

FAQ

What is the maximum safe operating temperature for STF18N60DM2?

The junction temperature must not exceed 150 °C. With R_thj-case = 5 °C/W and T_case ≤ 100 °C, the device supports up to 25 W continuous dissipation. Derating is required above 100 °C case temperature, where I_D drops to 7.6 A per datasheet Table 1.

Does STF18N60DM2 require external gate protection?

No. The device integrates Zener protection between gate and source, rated for ±25 V. This eliminates the need for external gate clamping diodes in most applications, provided gate drive voltage stays within specified limits and PCB layout avoids excessive ringing.

How does the TO-220FP package differ from standard TO-220 in thermal performance?

TO-220FP has an insulated plastic tab that electrically isolates the drain (pin 2) from the heatsink, removing the need for insulating pads. Thermally, its R_thj-case is 5 °C/W-identical to STP18N60DM2-so thermal performance is equivalent when mounted to the same heatsink surface.

Can STF18N60DM2 replace older STF18N60M2 in existing designs?

Yes-pin-to-pin compatible with identical TO-220FP footprint and improved specs: lower R_DS(on) (0.260 Ω vs. 0.320 Ω), reduced Q_rr (0.675 µC vs. 1.1 µC), and enhanced dv/dt ruggedness (50 V/ns vs. 40 V/ns). No layout or drive circuit changes are needed.