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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF18N60M2

Name: STF18N60M2
Brand: STMicroelectronics
SKU: STF18N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF18N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF18N60M2.pdf

Description:: MOSFET N-CH 600V 13A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF18N60M2 from STMicroelectronics is an N-channel 600 V, 13 A MDmesh M2 Power MOSFET in TO-220FP package, featuring 0.255 Ω typical R_DS(on), 21.5 nC total gate charge, and 100% avalanche tested for ruggedness-designed for high-efficiency LCC and resonant converters in industrial SMPS.

For engineers reviewing the STF18N60M2 datasheet, STF18N60M2 pinout, STF18N60M2 application, or STF18N60M2 equivalent, key selection criteria include its low C_oss (40 pF), Zener-protected gate, 15 V/ns diode recovery dv/dt rating, and 2.5 kV insulation withstand voltage for isolated heatsink mounting.

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and optimized vertical structure to simultaneously reduce conduction loss and switching energy-evidenced by 164.5 pF equivalent output capacitance (C_oss,eq) and 135 mJ single-pulse avalanche energy (E_AS). Its 5 Ω intrinsic gate resistance and 3.2 nC gate-source charge support fast, controlled turn-on with minimal ringing.

The device integrates a robust body diode with 305 ns reverse recovery time (T_j = 25 °C) and 3.3 µC Q_rr, enabling reliable operation in hard-switched and resonant topologies without external snubbing. The ±25 V gate-source rating and Zener protection ensure gate integrity under transient overvoltage conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in continuous operation with margin for transients.
R_DS(on) max	0.280 Ω - Limits conduction loss to ≤ 47 W at 13 A, enabling compact thermal design in TO-220FP.
Q_g	21.5 nC - Enables efficient gate drive with standard 1–2 A peak drivers at 100–300 kHz switching frequencies.
C_oss	40 pF - Reduces capacitive switching loss and improves zero-voltage switching (ZVS) capability in resonant converters.
E_AS	135 mJ - Guarantees reliable unclamped inductive switching without failure under worst-case load dump conditions.
T_j max	150 °C - Supports continuous operation in enclosed industrial enclosures with ambient up to 85 °C and forced airflow.

Pinout & Package

TO-220FP package: insulated tab (no electrical connection), vertical mounting with heat sink contact on metal backside; footprint compatible with standard TO-220 heatsinks but with creepage-enhanced isolation.

Pin/Terminal	Circuit Role	Design Meaning
D (Pin 2)	Drain	High-side switching node; electrically connected to metal tab-requires insulated mounting hardware.
G (Pin 1)	Gate	Control input; Zener-protected to ±25 V-tolerates gate drive overshoot and Miller-induced spikes.
S (Pin 3)	Source	Power return path and gate reference; low-inductance connection critical for minimizing switching noise.

Key Features

Feature	Design Value
Extremely low gate charge	21.5 nC total charge enables <100 ns turn-on with 2 A gate driver-reducing switching loss by ≥18% vs. legacy 600 V MOSFETs.
Optimized C_oss profile	40 pF measured at 100 V + 164.5 pF C_oss,eq up to 480 V-supports stable ZVS across 90–99% duty cycle in LLC half-bridge designs.
100% avalanche tested	Each unit validated to 3 A repetitive avalanche current and 135 mJ single-pulse E_AS-ensures field reliability in overload and short-circuit events.
Zener-protected gate	Integrated gate-body Zener clamps transients to ±25 V-eliminates need for external gate protection in 400 V AC-input PFC stages.

Applications

Industrial SMPS

LCC Resonant Converters

Use Scenario: 1 kW telecom rectifier with active PFC front-end and LLC resonant DC-DC stage.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in LLC half-bridge power stage operating at 250–500 kHz.

Use Value: Low C_oss and 305 ns diode t_rr enable soft switching across full load range, achieving >96% peak efficiency.

Use Scenario: 600 W LED driver for high-bay lighting with constant-current regulation and dimming interface.

IC Role / Device Role / Timing Role: Resonant tank switch in asymmetric half-bridge topology with variable frequency control.

Use Value: 0.255 Ω R_DS(on) minimizes conduction loss at 13 A peak current, reducing heatsink size by 35% vs. competitor devices.

Server PSU

EV Onboard Charger

Use Scenario: 3.3 kW server power supply with dual-phase interleaved LLC architecture.

IC Role / Device Role / Timing Role: High-side switch in each LLC leg, synchronized via phase-shifted gate drive.

Use Value: 2.5 kV insulation rating allows direct mounting to grounded heatsink-simplifying mechanical design and improving thermal transfer.

Use Scenario: 6.6 kW bidirectional OBC with AC/DC and DC/AC modes using shared power stage.

IC Role / Device Role / Timing Role: Unidirectional switch in AC/DC PFC boost stage and bidirectional switch in DC/AC inverter leg.

Use Value: Avalanche ruggedness and 15 V/ns diode dv/dt rating prevent failure during grid voltage surges and regenerative braking transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18N60M2	Same die, TO-220 (non-isolated tab); R_thj-case = 4.5 °C/W vs. 5.0 °C/W; no 2.5 kV isolation rating.	Requires insulating washer for heatsink mounting; unsuitable where creepage/clearance mandates isolated mounting.	Select when cost sensitivity outweighs isolation requirements and thermal margin permits higher R_th.
IPP60R190C7	650 V CoolMOS™ C7; R_DS(on) = 0.190 Ω; Q_g = 24.5 nC; no integrated Zener; C_oss,eq = 125 pF at 400 V.	Higher conduction efficiency but larger switching loss due to higher C_oss; requires external gate protection.	Prefer for ultra-high-efficiency 500–700 kHz designs where gate drive strength and board space allow added protection components.

Compared with STP18N60M2, STF18N60M2 trades 0.5 °C/W higher thermal resistance for 2.5 kV isolation and simplified mechanical integration; versus IPP60R190C7, it delivers lower E_sw in resonant topologies despite slightly higher R_DS(on), thanks to superior C_oss linearity.

Availability

STF18N60M2 is available at Aetrix Electronics and suitable for industrial SMPS, LCC resonant converters, server PSUs, and EV onboard chargers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STF18N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

The MDmesh M2 product line targets high-efficiency switched-mode power supplies, emphasizing low R_DS(on), low gate charge, and rugged avalanche performance for 500–650 V applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF18N60M2 supports 8 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9710 Rev 4. This derating reflects thermal limits of the TO-220FP package and ensures safe operation within SOA boundaries at elevated temperatures without pulse limitation.

Does the device require external gate protection?

No-STF18N60M2 integrates a Zener diode between gate and source, rated for ±25 V, which clamps transient overvoltage and eliminates the need for external gate protection components in standard PFC and resonant converter applications.

How does the 2.5 kV insulation rating impact heatsink mounting?

The 2.5 kV RMS insulation withstand voltage allows direct mounting of the TO-220FP metal tab to a grounded heatsink without insulating hardware-reducing thermal resistance by ~0.5 °C/W and simplifying mechanical assembly while meeting IEC 62368-1 creepage requirements.

What is the significance of C_oss,eq = 164.5 pF at V_DS = 480 V?

C_oss,eq represents the constant capacitance that yields the same stored energy as the actual nonlinear C_oss curve from 0 to 480 V. At 164.5 pF, it quantifies the effective energy loss during turn-off (E_oss = ½ × C_oss,eq × V_DS²), directly impacting ZVS initiation voltage and resonant tank design in LLC converters.

STF18N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 791 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF18N60M2 FAQ

1.How can I place an order for STF18N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF18N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF18N60M2 reliable?

The price and inventory of STF18N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF18N60M2 is usually 5 days.

3.What payment methods are accepted for STF18N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF18N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF18N60M2?

STF18N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF18N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF18N60M2?

For technical support, including STF18N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF18N60M2 requirements.

6.How does Aetrix verify that STF18N60M2 is sourced from the original manufacturer or authorized distributors?

All STF18N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF18N60M2 meets industry standards.

7.What is the process for return or replacement of STF18N60M2?

All STF18N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STF18N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF18N60M2 part is unused and in its original packaging.

Return procedure for STF18N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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