STMicroelectronics STF18N65M5
- Part No.:
- STF18N65M5
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STF18N65M5.pdf
- Description:
- MOSFET N-CH 650V 15A TO220FP
- Quantity:
- Payment:

- Shipping:

Inventory:6,220
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Product details
Overview
STF18N65M5 from STMicroelectronics is an N-channel 650 V, 198 mΩ typ. (220 mΩ max.), 15 A MDmesh M5 Power MOSFET in TO-220 package, optimized for high-efficiency hard-switching and ZVS resonant topologies in industrial SMPS, PFC stages, and solar inverters.
For engineers reviewing the STF18N65M5 datasheet, STF18N65M5 pinout, STF18N65M5 application, or STF18N65M5 equivalent, key selection criteria include its 15 V/ns dv/dt capability, 210 mJ single-pulse avalanche energy, 31 nC total gate charge, and 1.14 °C/W junction-to-case thermal resistance - all critical for reliable high-voltage power conversion design.
Technical Context
This device leverages ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low RDS(on) while maintaining robust 650 V breakdown voltage and fast switching performance. Its 15 V/ns dv/dt rating enables stable operation under high-slew-rate conditions without spurious turn-on.
The integrated body diode exhibits 290 ns reverse recovery time (TJ = 25 °C) and 3.4 µC Qrr, supporting efficient inductive load switching in bridge configurations. All units undergo 100% UIS avalanche testing at IAR = 4 A and EAS = 210 mJ.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - Withstands DC bus voltages up to 400 V in 3-phase rectified systems with 50% safety margin. |
| RDS(on) max | 220 mΩ at VGS = 10 V, ID = 7.5 A - Enables <1.7 W conduction loss at 10 A continuous drain current. |
| ID cont @ TC = 25 °C | 15 A - Supports >3 kW output in 400 V PFC designs with forced-air cooling. |
| EAS | 210 mJ - Absorbs unclamped inductive energy during fault events without failure. |
| Qg | 31 nC - Reduces gate drive power requirement and enables use with low-current drivers (e.g., 1 A peak). |
| dv/dt | 15 V/ns - Prevents false triggering in high-noise half-bridge environments with fast voltage transients. |
| RthJC | 1.14 °C/W - Allows direct heatsink mounting for thermal management in compact industrial enclosures. |
Pinout & Package
TO-220 package with isolated tab (drain-connected), standard 3-pin configuration. Mounting hole centered on tab for mechanical stability and thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Left) | Gate (G) | High-impedance control input requiring <31 nC charge for full enhancement; sensitive to ESD. |
| 2 (Center) | Drain (D) / Tab | Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits. |
| 3 (Right) | Source (S) | Power return path and gate reference node; carries full load current and reverse diode conduction current. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh M5 superjunction structure | Delivers 198 mΩ typ. RDS(on) at 650 V - 30% lower than previous-generation MDmesh M2 devices. |
| 100% UIS avalanche tested | Guarantees ruggedness against inductive switching faults without derating or external snubbers. |
| Low Qgd/Qg ratio (14/31 nC) | Improves Miller immunity and enables stable operation at high dv/dt without gate clamping. |
| Optimized body diode recovery | 290 ns trr and 3.4 µC Qrr reduce switching losses in synchronous rectification and LLC resonant converters. |
| ECOPACK® compliant | Meets RoHS and halogen-free requirements for industrial and renewable energy equipment compliance. |
Applications
| Industrial Switch-Mode Power Supplies | Three-Phase Motor Drives |
|---|---|
|
Use Scenario: Primary-side switching in 3–5 kW telecom and server PSUs operating at 100 kHz with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, conducting 12–15 A RMS with <100 ns switching transitions. Use Value: 220 mΩ RDS(on) limits conduction loss to <2.0 W at full load, enabling >95% efficiency at 50 °C ambient. |
Use Scenario: Inverter leg switching in 7.5 kW HVAC compressors using 650 V DC link and space-vector PWM at 8 kHz. IC Role / Device Role / Timing Role: Low-side IGBT replacement in 3-phase inverter bridges, managing bidirectional current and freewheeling paths. Use Value: 15 V/ns dv/dt rating prevents shoot-through during high-di/dt commutation of 30 A motor phase currents. |
| Solar Microinverters | EV Onboard Chargers |
|
Use Scenario: DC–AC H-bridge switching stage in single-phase 300–600 W microinverters interfacing with 30–60 V PV strings. IC Role / Device Role / Timing Role: Synchronous rectifier and bidirectional switch in transformerless inverter topologies with galvanic isolation via modulation. Use Value: 210 mJ EAS withstands grid-spike transients up to 1.2 kV without failure, meeting IEC 62109-1 surge immunity. |
Use Scenario: AC–DC PFC boost stage in 6.6 kW OBCs converting 230 V AC to 400 V DC with interleaved dual-boost architecture. IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 120 kHz with zero-voltage switching assistance. Use Value: 31 nC Qg allows gate drive with low-power controllers (e.g., STNRG388A), reducing auxiliary supply burden by 40%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP18N65M5 | Identical die, TO-220 package, same RDS(on), Qg, and avalanche rating; differs only in marking and packing (tube vs. tape/reel). | No functional difference; used interchangeably in manual assembly and low-volume prototyping. | Select when tube packaging and legacy BOM alignment are required. |
| STW18N65M5 | Same die, TO-247 package; RthJC = 1.14 °C/W unchanged, but RthJA improved to 50 °C/W (vs. 62.5 °C/W for TO-220). | Better thermal dissipation in high-power density designs; preferred for >4 kW continuous operation with limited airflow. | Select when higher power derating margin or automated pick-and-place is needed. |
Compared with STP18N65M5, STF18N65M5 offers identical electrical specs but reflects a discontinued order code per DS8927 Rev 4; STW18N65M5 provides superior thermal performance in TO-247, making it the recommended upgrade path for new designs requiring long-term availability.
Availability
STF18N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, three-phase motor drives, solar microinverters, and EV onboard chargers requiring stable component supply and long-lifecycle support.
Supply support for STF18N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications.
The MDmesh M5 product line targets high-efficiency, high-reliability power conversion systems demanding ultra-low RDS(on) at 600–650 V, with emphasis on PFC, solar inverters, and industrial motor control.
FAQ
Is STF18N65M5 still in active production?
No - STF18N65M5 was removed from the official STMicroelectronics datasheet DS8927 Rev 4 (November 2025) and is no longer listed as an active orderable part. STP18N65M5 (TO-220) and STW18N65M5 (TO-247) remain active and functionally identical. Aetrix Electronics maintains legacy inventory with full traceability and supports transition planning to active variants.
What is the maximum safe operating temperature for STF18N65M5?
The absolute maximum junction temperature is 150 °C, and the storage temperature range is –55 °C to +150 °C. For reliable long-term operation, ST recommends limiting TJ to ≤135 °C under continuous conduction mode, based on SOA curves in Figure 1 and thermal resistance data (RthJC = 1.14 °C/W).
Can STF18N65M5 replace STP18N65M5 in existing PCB layouts?
Yes - both share identical TO-220 package dimensions, pinout (G-D-S), and thermal/mechanical footprint per Table 8 in DS8927. No board rework is required; however, verify marking and reel/tube packaging compatibility with your assembly process before deployment.
Does STF18N65M5 require a negative gate voltage for reliable turn-off?
No - the gate threshold voltage is specified at 3–5 V (VGS(th)), and the device is fully enhanced at VGS = 10 V. While ±25 V is the absolute maximum gate-source rating, stable turn-off is achieved with 0 V gate drive; negative bias is not required for noise immunity in typical industrial applications.
STF18N65M5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ V
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 220mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 31 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1240 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 25W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STF18N65M5 FAQ
1.How can I place an order for STF18N65M5 through Aetrix?
Please submit a Request for Quotation (RFQ) for STF18N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STF18N65M5 reliable?
The price and inventory of STF18N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF18N65M5 is usually 5 days.
3.What payment methods are accepted for STF18N65M5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF18N65M5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STF18N65M5?
STF18N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STF18N65M5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STF18N65M5?
For technical support, including STF18N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF18N65M5 requirements.
6.How does Aetrix verify that STF18N65M5 is sourced from the original manufacturer or authorized distributors?
All STF18N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF18N65M5 meets industry standards.
7.What is the process for return or replacement of STF18N65M5?
All STF18N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STF18N65M5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STF18N65M5 part is unused and in its original packaging.
Return procedure for STF18N65M5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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