STMicroelectronics STF18NM60N

Overview

STF18NM60N from STMicroelectronics is an N-channel 600 V, 13 A Power MOSFET in TO-220FP package, featuring 285 mΩ max R_DS(on), 35 nC total gate charge, and 100% avalanche tested robustness. It employs MDmesh™ II vertical strip technology for high-efficiency switch-mode power supplies, PFC stages, and industrial motor drives requiring low conduction and switching losses.

For engineers reviewing the STF18NM60N datasheet, STF18NM60N pinout, STF18NM60N application, or STF18NM60N equivalent, this device is selected for high-voltage DC-DC converters, resonant LLC topologies, and offline SMPS where low C_iss (1000 pF), fast switching (t_d(off) = 55 ns), and rugged body diode recovery (Q_rr = 4.0 µC) are critical.

Technical Context

This MOSFET uses ST's second-generation MDmesh™ II process, combining a vertical drift region with optimized strip layout to minimize both R_DS(on) × Q_g figure-of-merit and output capacitance nonlinearity. Its 600 V V_(BR)DSS rating supports universal-input AC-DC front-ends up to 400 V DC bus.

The integrated source-drain diode delivers 13 A continuous and 52 A pulsed current with 300 ns reverse recovery time at 100 A/µs di/dt, enabling hard-switched operation without external snubbers in flyback and forward converters.

Key Specifications

Pinout & Package

STF18NM60N is housed in a TO-220FP (Full-Pak) package with insulated tab, rated for 2.5 kV RMS insulation between leads and heat sink. The package provides enhanced thermal performance (R_thJC = 1.14 °C/W) and creepage/clearance compliance for reinforced isolation in safety-critical applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP18NM60N and STW18NM60N, the STF18NM60N uniquely combines TO-220FP's compact form factor, 2.5 kV insulation, and 1.14 °C/W thermal resistance-making it optimal for space-constrained, safety-certified 1–2 kW industrial power supplies where isolation and thermal performance must coexist.

Availability

STF18NM60N is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, LED streetlight drivers, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and certified isolation compliance.

Supply support for STF18NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ II high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in industrial and computing power systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF18NM60N supports 8.2 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6338 Rev 5. This rating reflects thermal derating due to junction-to-case thermal resistance (1.14 °C/W) and maximum junction temperature limit of 150 °C. Operation above this current requires forced cooling or reduced ambient temperature.

Does the STF18NM60N have an integrated ESD protection diode on the gate?

No - the STF18NM60N does not include integrated gate ESD protection. Its gate oxide is rated for ±25 V V_GS absolute maximum, and gate-source leakage is specified at ±100 nA. External gate protection (e.g., 12 V Zener clamp) is recommended in systems exposed to handling or system-level ESD events per IEC 61000-4-2.

Can the body diode be used for synchronous rectification in a flyback converter?

Yes - the body diode supports 13 A continuous and 52 A pulsed current with 300 ns reverse recovery time at 100 A/µs di/dt. However, its 1.6 V forward voltage at 13 A results in higher conduction loss than discrete Schottky or MOSFET synchronous rectifiers; it is best used in low-duty-cycle or low-current auxiliary winding applications where simplicity outweighs efficiency loss.

What is the safe operating area (SOA) limitation at 100 µs pulse width and 25 °C case temperature?

At 100 µs pulse width and T_C = 25 °C, the SOA is limited by R_DS(on) to approximately 10 A at 400 V V_DS, as shown in Figure 1 of DS6338 Rev 5. This boundary assumes no second breakdown effects and accounts for thermal inertia; sustained operation near this limit requires verification of peak junction temperature using transient thermal impedance curves (Figure 2).