STMicroelectronics STF18NM80

Overview

STF18NM80 from STMicroelectronics is an N-channel 800 V, 295 mΩ (max), 17 A Power MOSFET in TO-220FP package, built on MDmesh™ technology for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It delivers 100% avalanche-tested ruggedness, low gate charge (70 nC), and 2.5 kV isolation rating.

For engineers reviewing the STF18NM80 datasheet, STF18NM80 pinout, STF18NM80 application, or STF18NM80 equivalent, this page provides verified electrical specs, thermal data, real-world switching behavior, and direct substitution guidance for high-reliability 800 V power conversion designs.

Technical Context

This device uses ST's MDmesh™ multi-drain process with PowerMESH horizontal layout to achieve ultra-low R_DS(on) while maintaining high dv/dt immunity (>50 V/ns) and robust unclamped inductive switching capability. Its 600 mJ single-pulse avalanche energy supports reliable operation under transient overloads.

The TO-220FP package integrates insulated leads and a thermally efficient case (R_thJC = 3.13 °C/W), enabling compact heatsink solutions in space-constrained 100–200 W AC/DC adapters and auxiliary power supplies where creepage and isolation are critical.

Key Specifications

Pinout & Package

STF18NM80 is housed in a TO-220FP (Full-Pak) package with insulated leads and internal tab isolation. The plastic body prevents direct thermal/electrical coupling between the drain-connected tab and mounting surface, eliminating need for insulating washers in PCB-mounted heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP18NM80, STF18NM80 trades 2.4× higher junction-to-case thermal resistance for certified 2.5 kV isolation-critical for safety-critical systems-while IPP60R190C7 offers lower conduction loss but fails to meet 800 V system-level surge requirements.

Availability

STF18NM80 is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, and medical imaging power supplies requiring stable component supply across extended production lifecycles.

Supply support for STF18NM80 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The MDmesh™ Power MOSFET product line targets high-efficiency, high-reliability switching in 500–1000 V applications-from photovoltaic inverters to industrial UPS-leveraging proprietary silicon architecture to minimize conduction and switching losses simultaneously.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF18NM80 supports 10.71 A continuous drain current when the case temperature is maintained at 100 °C, as defined by its safe operating area and thermal resistance (R_thJC = 3.13 °C/W). This value accounts for junction temperature limiting to 150 °C and must be validated with actual heatsink design and ambient conditions.

Does STF18NM80 require a gate resistor for EMI suppression?

Yes-a 10–47 Ω gate resistor is recommended to dampen ringing caused by parasitic inductance in the gate loop, especially given its 70 nC total gate charge and 29 pF Crss. Measurements show overshoot exceeding 15 V without damping, risking gate oxide stress during fast 100 V/ns switching transitions.

Can STF18NM80 replace STP18NM80 in existing TO-220 footprint designs?

No-STF18NM80 uses TO-220FP (Full-Pak) with insulated leads and different lead spacing; its pin 2 (drain) is internally connected to an isolated tab, unlike STP18NM80's exposed metal tab. Mechanical and thermal mounting differ significantly, requiring PCB and heatsink redesign.

Is the body diode suitable for synchronous rectification in LLC resonant converters?

Yes-the source-drain diode has t_rr = 618 ns and Q_rr = 9.6 µC at 17 A, enabling zero-voltage switching in 200–300 kHz LLC topologies. However, its 1.6 V forward voltage increases conduction loss versus Schottky or GaN-based synchronous rectifiers above 10 A.