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STMicroelectronics STF19NF20

Part No.:
STF19NF20
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSTF19NF20.pdf
Description:
MOSFET N-CH 200V 15A TO220FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,171

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Product details

Overview

STF19NF20 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220FP package, rated for 200 V drain-source voltage, 0.11 Ω typical RDS(on) at VGS = 10 V, and 15 A continuous drain current at TC = 25 °C. It features extremely high dv/dt capability (15 V/ns), low gate charge (24 nC), and integrated source-drain diode with 125 ns reverse recovery time - optimized for hard-switching power conversion in industrial motor drives and DC-DC converters.

For engineers reviewing the STF19NF20 datasheet, STF19NF20 pinout, STF19NF20 application, or STF19NF20 equivalent, this device is selected for high-reliability 200 V switching where thermal robustness (Rthj-case = 5 °C/W), avalanche energy rating (110 mJ), and fast switching (td(off) = 19 ns) are critical to system efficiency and fault tolerance.

Technical Context

This MOSFET employs STMicroelectronics' MESH OVERLAY™ strip-layout process, delivering improved cell density and reduced intrinsic capacitance versus conventional planar designs. Its gate threshold voltage (2–4 V) ensures compatibility with standard 10 V gate drivers, while the 200 V breakdown voltage supports operation across 110–240 VAC input stages after rectification.

The TO-220FP package integrates internal insulation (2.5 kV RMS isolation between leads and heatsink) and enables surface-mount-compatible mounting without external insulators. Thermal resistance junction-to-case is 5 °C/W - significantly lower than standard TO-220 - enabling higher power density in convection-cooled industrial enclosures.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 200 V - supports full-wave rectified 110–240 VAC inputs with margin for surge and ringing
RDS(on) max 0.16 Ω - limits conduction loss to ≤18 W at 15 A, enabling compact heatsink design
ID cont @ TC=25°C 15 A - delivers up to 3 kW switching power in half-bridge configurations with forced air
Qg 24 nC - reduces gate drive power requirement and enables use of low-current drivers (e.g., TC4427)
EAS 110 mJ - withstands unclamped inductive switching events without failure in motor control H-bridges
dv/dt rating 15 V/ns - suppresses false turn-on during high-speed switching in noisy EMI environments
tr/tf 22 ns / 11 ns - minimizes switching transition losses in 100–500 kHz SMPS topologies

Pinout & Package

STF19NF20 uses the insulated TO-220FP (Full-Pak) package: three leads (G, D, S), metal tab electrically isolated from drain, and 2.5 kV RMS insulation rating between all leads and heatsink. Mounting requires no additional insulating washer.

Pin/Terminal Circuit Role Design Meaning
Lead 1 (left) Gate (G) High-impedance control terminal; accepts 0–10 V logic-level drive; 100 nA leakage at ±20 V
Lead 2 (center) Drain (D) Main high-side power path; connected internally to insulated metal tab; rated for 200 V blocking
Lead 3 (right) Source (S) Power return node; referenced to driver ground; carries full load current and diode recovery current
Metal tab Drain (D), insulated Thermal interface only; electrically isolated at 2.5 kV RMS - enables direct heatsink mounting without mica

Key Features

Feature Design Value
MESH OVERLAY™ process Reduces RDS(on) by 30% vs. legacy planar MOSFETs at same die size, improving power density
Extremely high dv/dt capability 15 V/ns rating prevents spurious turn-on during fast voltage transients in motor drive bridge arms
Low gate charge (Qg) 24 nC total charge enables <1 µs turn-on with 25 mA gate driver - critical for ZVS/ZCS soft-switching
Integrated source-drain diode 15 A continuous / 60 A pulsed body diode with 1.6 V forward drop supports synchronous rectification in buck converters
Avalanche-rated 110 mJ single-pulse energy rating allows reliable operation under inductive load switching faults without snubbers

Applications

Industrial Motor Drives Switch-Mode Power Supplies

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC compressors.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 15 A peak phase current at 20 kHz PWM frequency.

Use Value: 125 ns diode trr and 15 V/ns dv/dt immunity prevent shoot-through during commutation transitions.

Use Scenario: Primary-side switch in 500 W offline flyback converter for industrial PLC power modules.

IC Role / Device Role / Timing Role: Main power switch operating at 100 kHz with 200 V reflected output voltage.

Use Value: 200 V VDS rating provides 50% margin over 135 V clamp voltage, ensuring reliability under line surges.

Solar Microinverters Uninterruptible Power Supplies

Use Scenario: DC-DC boost stage converting PV panel output (30–60 V) to 400 V DC bus.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in interleaved boost converter with 250 kHz switching.

Use Value: 0.11 Ω RDS(on) reduces conduction loss to <1.25 W at 15 A, improving peak efficiency to >98.2%.

Use Scenario: Inverter output stage converting 48 V battery to 230 VAC for backup power delivery.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge topology driving transformer primary with 50 Hz SPWM.

Use Value: 110 mJ EAS rating absorbs energy from transformer leakage inductance during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V Power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP19NF20 Same die, TO-220 package with non-insulated tab (Rthj-case = 1.39 °C/W, no isolation) Requires insulating washer for heatsink mounting; higher thermal performance but lower safety rating Select when maximum thermal conductivity is prioritized and isolation is handled externally
IRF640N 200 V, 0.18 Ω RDS(on), 18 A, TO-220; higher Qg (39 nC), slower switching (tf = 45 ns) Higher conduction and switching losses; not avalanche-rated; unsuitable for unclamped inductive loads Select only for cost-sensitive, low-frequency (<50 kHz), non-avalanche-critical applications

Compared with STF19NF20, STP19NF20 offers superior thermal resistance but lacks built-in isolation, requiring additional BOM components; IRF640N trades off ruggedness and speed for legacy compatibility and lower unit cost - neither matches STF19NF20's combination of insulation, avalanche rating, and 24 nC gate charge.

Availability

STF19NF20 is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, solar microinverters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for STF19NF20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

STF19NF20 belongs to ST's MESH OVERLAY™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability 200 V switching in industrial automation, renewable energy, and power infrastructure applications.

FAQ

What is the maximum safe operating temperature for STF19NF20?

The STF19NF20 has a specified operating junction temperature range of –55 °C to 150 °C. Its absolute maximum Tj is 150 °C; sustained operation above 130 °C requires derating per Figure 1 (SOA curve) and thermal design validation using Rthj-case = 5 °C/W and PCB layout per Figure 29 footprint guidelines.

Does STF19NF20 require a gate resistor for EMI suppression?

Yes - a 10–47 Ω gate resistor is recommended to dampen ringing caused by parasitic Lg/Ciss resonance. The datasheet specifies switching times (e.g., td(on) = 11.5 ns) with RG = 4.7 Ω; increasing RG beyond 100 Ω degrades switching speed and increases losses without meaningful EMI benefit.

Can STF19NF20 be used in synchronous rectification?

Yes - its integrated source-drain diode has 15 A continuous rating and 1.6 V forward voltage at 15 A, and its low RDS(on) (0.11 Ω typ.) enables efficient synchronous rectification in DC-DC converters. However, external gate control timing must account for body diode conduction delay to avoid shoot-through.

Is STF19NF20 RoHS and REACH compliant?

Yes - STF19NF20 is manufactured in ECOPACK®-compliant versions meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Compliance status and material declarations are published on ST's official website under ECOPACK® documentation for DS4935 Rev 7.

STF19NF20 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MESH OVERLAY™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
160mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
800 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP

STF19NF20 FAQ

1.How can I place an order for STF19NF20 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF19NF20 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF19NF20 reliable?

The price and inventory of STF19NF20 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF19NF20 is usually 5 days.

3.What payment methods are accepted for STF19NF20?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF19NF20 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF19NF20?

STF19NF20 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF19NF20 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF19NF20?

For technical support, including STF19NF20 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF19NF20 requirements.

6.How does Aetrix verify that STF19NF20 is sourced from the original manufacturer or authorized distributors?

All STF19NF20 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF19NF20 meets industry standards.

7.What is the process for return or replacement of STF19NF20?

All STF19NF20 units undergo pre-shipment inspection (PSI). If there is an issue with STF19NF20, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF19NF20 part is unused and in its original packaging.

Return procedure for STF19NF20:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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