My Inquiry
My Account
STMicroelectronics STF19NM65N
- Part No.:
- STF19NM65N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STF19NM65N.pdf
- Description:
- MOSFET N-CH 650V 15.5A TO220FP
- Quantity:
- Payment:
- Shipping:
Inventory:7,308
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STF19NM65N from STMicroelectronics is an N-channel 650 V, 0.25 Ω (typ), 15.5 A (continuous at TC = 25 °C) Power MOSFET in TO-220FP package, implementing second-generation MDmesh™ technology for high-efficiency switching in offline SMPS and PFC stages.
For engineers reviewing the STF19NM65N datasheet, STF19NM65N pinout, STF19NM65N application, or STF19NM65N equivalent, this device is selected for high-voltage, medium-current hard-switched converters where low RDS(on), low Qg (55 nC), and robust avalanche capability (400 mJ EAS) are critical to efficiency and reliability.
Technical Context
This MOSFET uses ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 650 V VDSS rating supports universal-input AC/DC designs up to 380 V DC bus, while its 0.25 Ω typical RDS(on) ensures low conduction loss at 15.5 A.
Dynamic performance is defined by low input capacitance (Ciss = 1900 pF), low gate charge (Qg = 55 nC), and fast switching times (td(on) = 25 ns, tf = 26 ns) under 4.7 Ω gate resistance - enabling operation at 100–300 kHz in LLC and transition-mode PFC topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 650 V - Supports universal AC input (85–265 VAC) with ≥20% voltage margin in 380 V DC-link applications |
| RDS(on) max | 0.27 Ω - Limits conduction loss to ≤6.5 W at 15.5 A, enabling thermally constrained TO-220FP mounting |
| Qg | 55 nC - Enables efficient gate drive with standard 1-A peak drivers; reduces driver power loss and EMI |
| EAS | 400 mJ - Provides unclamped inductive switching robustness without external snubbers in flyback/PFC circuits |
| Ciss | 1900 pF - Low input capacitance improves Miller immunity and enables stable high-frequency operation |
| Tj max | 150 °C - Allows full-rated current operation with standard heatsinking in industrial ambient (≤70 °C) |
Pinout & Package
STF19NM65N is housed in a TO-220FP (Full-Pak) package: insulated plastic case with internal thermal pad, 3-pin single-ended configuration, and lead-free ECOPACK® compliance. The package provides enhanced creepage/clearance vs standard TO-220 and eliminates need for insulating washers in heatsink mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path for load current; tied to source of internal MOSFET cell array | Low-inductance connection point for PCB ground plane; referenced for gate drive and current sensing |
| 2 (Gate) | Control terminal for channel conduction; isolated by oxide dielectric | High-impedance input requiring <55 nC charge for full enhancement; sensitive to ESD and ringing |
| 3 (Drain) | Main high-side power terminal; connected to internal drain epitaxial layer | High-voltage node (up to 650 V); requires ≥4 mm creepage on PCB; electrically tied to metal tab |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees single-pulse EAS = 400 mJ at Tj = 25 °C - eliminates need for design margining against inductive energy spikes |
| Low gate charge (Qg = 55 nC) | Reduces gate driver power dissipation by >40% vs comparable 650 V MOSFETs - extends driver IC lifetime in high-duty-cycle PFC |
| Second-generation MDmesh™ structure | Delivers 0.25 Ω RDS(on) at 650 V - achieves conduction loss parity with 500 V devices while maintaining voltage safety margin |
| Low Coss (110 pF) & Crss (10 pF) | Minimizes Miller-induced turn-on risk during high dv/dt switching - improves stability in high-side configurations |
Applications
| Server PSU Primary Switch | Industrial PFC Boost Stage |
|---|---|
|
Use Scenario: 1–3 kW server power supply operating in continuous conduction mode (CCM) boost PFC with 380 V DC output. IC Role / Device Role / Timing Role: Main switching device in interleaved boost converter; switched at 65–100 kHz with zero-voltage transition assistance. Use Value: 0.25 Ω RDS(on) limits conduction loss to <5 W per phase; 55 nC Qg enables use of cost-optimized gate drivers without thermal derating. |
Use Scenario: 2.5 kW factory automation power supply with active front-end rectification and harmonic filtering. IC Role / Device Role / Timing Role: High-side switch in two-phase interleaved boost; handles 15.5 A RMS current with 150 °C junction limit. Use Value: 400 mJ EAS withstands worst-case line surge events without failure; TO-220FP insulation allows direct heatsink mounting without isolation hardware. |
| LED Streetlight Driver | Telecom Rectifier Module |
|
Use Scenario: Outdoor LED streetlight with universal AC input and constant-current output via flyback + buck topology. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback controller; operates at variable frequency up to 130 kHz. Use Value: Low Ciss/Crss ratio ensures clean zero-crossing detection; 650 V rating accommodates 305 VAC peak surges per IEC 61000-4-5. |
Use Scenario: 48 V telecom rectifier with dual forward converter stage feeding battery backup system. IC Role / Device Role / Timing Role: Primary switch in asymmetrical half-bridge; conducts 15.5 A peak during 50% duty cycle at 100 kHz. Use Value: 0.83 °C/W Rthj-case enables 15.5 A operation with ≤40 °C heatsink rise; 100% avalanche test ensures field reliability over 10-year service life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP19NM65N | Same silicon die, TO-220 (non-insulated) package; Rthj-case = 0.83 °C/W identical, but requires insulating washer | Preferred where mechanical clearance allows non-isolated mounting and cost sensitivity outweighs assembly labor | Select when heatsink isolation is already implemented externally and board space permits larger TO-220 footprint |
| FDPF19N65 | ON Semiconductor 650 V MOSFET; RDS(on) = 0.28 Ω, Qg = 62 nC, EAS not specified in datasheet | Lacks guaranteed avalanche rating; higher Qg increases gate drive loss in high-frequency PFC | Acceptable only in non-critical, cost-driven consumer PSUs where EAS margining is handled at system level |
Compared with STP19NM65N, STF19NM65N offers integrated electrical isolation and identical thermal performance in a smaller footprint; versus FDPF19N65, it delivers verified avalanche ruggedness and 13% lower gate charge - critical for industrial PFC reliability and efficiency.
Availability
STF19NM65N is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, LED streetlight drivers, and telecom rectifiers requiring stable component supply across multi-year production cycles.
Supply support for STF19NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
This device belongs to ST's MDmesh™ Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline AC/DC conversion - emphasizing low RDS(on), low Qg, and rugged avalanche performance.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STF19NM65N supports 10 A continuous drain current at TC = 100 °C, as specified in Table 2 of the official datasheet. This derating reflects thermal limitations of the TO-220FP package and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load conditions.
Does STF19NM65N require a gate resistor for reliable switching?
Yes - a 4.7 Ω gate resistor is used in the datasheet's switching time characterization (Table 7). This value balances switching speed (tf = 26 ns) against gate ringing and EMI; values below 3.3 Ω increase risk of oscillation, while above 10 Ω significantly raises switching losses in high-frequency PFC applications.
Can STF19NM65N replace STP19NM65N without board redesign?
No - although both share identical die and electrical specs, STF19NM65N uses TO-220FP (insulated tab), whereas STP19NM65N uses standard TO-220 (conductive tab). Direct replacement requires verification of heatsink isolation, PCB cutouts, and creepage distances, as the metal tab in STF19NM65N is internally connected to the drain.
Is STF19NM65N suitable for synchronous rectification?
No - STF19NM65N is optimized as a high-side switch in hard-switched topologies and lacks the low reverse recovery charge (Qrr = 6 µC) and fast body diode (trr = 460 ns) required for efficient synchronous rectification. Its body diode is intended for clamping and freewheeling, not bidirectional conduction.
STF19NM65N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 15.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 270mOhm @ 7.75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 55 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1900 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STF19NM65N FAQ
1.How can I place an order for STF19NM65N through Aetrix?
Please submit a Request for Quotation (RFQ) for STF19NM65N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STF19NM65N reliable?
The price and inventory of STF19NM65N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF19NM65N is usually 5 days.
3.What payment methods are accepted for STF19NM65N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF19NM65N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STF19NM65N?
STF19NM65N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STF19NM65N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STF19NM65N?
For technical support, including STF19NM65N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF19NM65N requirements.
6.How does Aetrix verify that STF19NM65N is sourced from the original manufacturer or authorized distributors?
All STF19NM65N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF19NM65N meets industry standards.
7.What is the process for return or replacement of STF19NM65N?
All STF19NM65N units undergo pre-shipment inspection (PSI). If there is an issue with STF19NM65N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STF19NM65N part is unused and in its original packaging.
Return procedure for STF19NM65N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STF19NM65N Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
