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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF20N65M5

Name: STF20N65M5
Brand: STMicroelectronics
SKU: STF20N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF20N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF20N65M5.pdf

Description:: MOSFET N-CH 650V 18A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:2,192

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Product details

Overview

STF20N65M5 from STMicroelectronics is an N-channel 650 V, 18 A Power MOSFET in TO-220FP package, featuring 160 mΩ typ. R_DS(on), 15 V/ns dv/dt capability, and 270 mJ single-pulse avalanche energy. It employs MDmesh M5 vertical process technology for high-efficiency switching in offline SMPS and PFC stages.

For engineers reviewing the STF20N65M5 datasheet, STF20N65M5 pinout, STF20N65M5 application, or STF20N65M5 equivalent, key selection criteria include its 650 V V_DSS, 190 mΩ max. R_DS(on), 36 A pulsed drain current, 4.17 °C/W R_thJC, and 100% avalanche-tested ruggedness under unclamped inductive loads.

Technical Context

This MOSFET integrates ST's MDmesh M5 silicon with PowerMESH layout to achieve low conduction loss while maintaining high voltage blocking and fast switching. Its 1434 pF C_iss and 3.7 pF C_rss support optimized gate drive design for hard-switched topologies.

The device delivers 288 ns typical reverse recovery time (T_J = 25 °C) and 4.7 µC Q_rr at 150 °C, enabling reliable operation with fast-recovery diodes in bridge configurations. Its 2.5 kV insulation withstand voltage ensures safe mounting on heatsinks without isolation hardware.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports universal-input offline converters up to 400 V DC bus with margin
R_DS(on) max	190 mΩ - enables <1.7 W conduction loss at 12 A continuous drain current
I_D cont @ T_C=100°C	11.3 A - defines thermal-limited output capability in compact heatsink designs
E_AS	270 mJ - guarantees single-pulse unclamped inductive switching survival at rated current
dv/dt rating	15 V/ns - prevents spurious turn-on in high-noise bridge-leg environments
R_thJC	4.17 °C/W - allows direct thermal path to heatsink for efficient power dissipation
Q_g	36 nC - determines gate driver current requirement for <100 ns switching transitions

Pinout & Package

TO-220FP package: insulated flange, vertical lead frame, 3-pin through-hole mount. Flange is electrically isolated (2.5 kV RMS), enabling direct heatsink attachment without insulating pads.

Pin/Terminal	Circuit Role	Design Meaning
1 (left)	Gate (G)	High-impedance control input requiring <36 nC charge for full enhancement
2 (center)	Drain (D)	Main high-voltage power terminal; connected internally to insulated flange
3 (right)	Source (S)	Power return node and gate reference; forms common source for half-bridge configuration

Key Features

Feature	Design Value
MDmesh M5 process	Enables 650 V rating with 160 mΩ typ. R_DS(on), reducing conduction loss by ~25% vs. prior-generation superjunction MOSFETs
100% avalanche tested	Each unit validated for E_AS ≥ 270 mJ, ensuring robustness in flyback and LLC resonant converter startup/fault conditions
Low C_rss/C_iss ratio	3.7 pF / 1434 pF = 0.0026 - minimizes Miller effect, improving gate drive efficiency and noise immunity
Enhanced dv/dt immunity	15 V/ns rating - suppresses false triggering during fast voltage transients in motor drives and inverters
Isolated flange	2.5 kV RMS insulation - eliminates need for mica washers or silicone pads in heatsink mounting

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1U server power supply operating at 100 kHz with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Primary-side switching element in continuous conduction mode (CCM) boost PFC stage.

Use Value: 160 mΩ R_DS(on) reduces conduction loss by 1.2 W vs. 250 mΩ alternatives, enabling >96% efficiency at 2 kW load.

Use Scenario: 3.3 kW industrial motor drive front-end with active PFC and 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in interleaved two-phase boost converter.

Use Value: 15 V/ns dv/dt rating prevents parasitic turn-on during phase-current commutation, eliminating shoot-through risk.

LED Streetlight Driver

Solar Microinverter DC-DC Stage

Use Scenario: Outdoor-rated 150 W constant-current LED driver with surge immunity to 6 kV line-to-ground.

IC Role / Device Role / Timing Role: Main switch in flyback topology with primary-side regulation.

Use Value: 270 mJ E_AS withstands lightning-induced inductive spikes without clamping circuitry, reducing BOM count.

Use Scenario: 300 W microinverter DC-DC converter interfacing PV panel (30–60 V) to 400 V grid interface.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology.

Use Value: 4.17 °C/W R_thJC enables 11.3 A continuous current at 100 °C case temperature, supporting high-power density in sealed enclosure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF20N60DM6	600 V V_DSS, 185 mΩ max. R_DS(on), same TO-220FP package, lower avalanche energy (220 mJ)	Not suitable for 400 V DC bus systems requiring 650 V margin; acceptable in 230 VAC-only PFC	Select when cost sensitivity outweighs 50 V derating need and system overvoltage stress is controlled
IPP60R190C7	600 V V_DSS, 190 mΩ max. R_DS(on), TO-220 package (non-isolated flange), 1.5 kV isolation rating	Requires insulating pad for heatsink mounting; higher thermal resistance (5.5 °C/W R_thJC)	Prefer where existing thermal design accommodates higher junction temperature or isolation is externally managed

Compared with STF20N65M5, STF20N60DM6 trades 50 V blocking margin and 50 mJ avalanche energy for slightly lower gate charge (32 nC), while IPP60R190C7 offers comparable R_DS(on) but demands additional isolation hardware and delivers 32% higher junction temperature rise per watt.

Availability

STF20N65M5 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, and outdoor LED drivers requiring stable component supply across multi-year production cycles.

Supply support for STF20N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh M5 superjunction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline AC-DC conversion and industrial power systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF20N65M5 supports 11.3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9474 Rev 4. This rating reflects thermal limitation rather than silicon capability and assumes proper heatsinking with ≤4.17 °C/W junction-to-case thermal resistance.

Does the TO-220FP package provide electrical isolation between leads and flange?

Yes - the TO-220FP package features 2.5 kV RMS insulation between all three leads and the external flange, verified per IEC 60747-5-2. This allows direct mounting to grounded heatsinks without insulating hardware, simplifying mechanical design and improving thermal performance.

How does the 15 V/ns dv/dt rating impact gate drive design?

The 15 V/ns dv/dt rating means the device resists false turn-on when V_DS rises rapidly during switching transitions. To maintain immunity, gate drive impedance should limit peak displacement current through C_rss to <100 mA - typically achieved with 10–22 Ω gate resistors and low-inductance PCB layout.

Is the 270 mJ avalanche energy rating tested per unit or statistically sampled?

ST performs 100% production avalanche testing on every STF20N65M5 unit per DS9474 Section 1.2, applying unclamped inductive load pulses until E_AS ≥ 270 mJ is achieved. No statistical sampling is used - each device is individually validated for ruggedness before shipment.

STF20N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1345 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF20N65M5 FAQ

1.How can I place an order for STF20N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF20N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF20N65M5 reliable?

The price and inventory of STF20N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF20N65M5 is usually 5 days.

3.What payment methods are accepted for STF20N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF20N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF20N65M5?

STF20N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF20N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF20N65M5?

For technical support, including STF20N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF20N65M5 requirements.

6.How does Aetrix verify that STF20N65M5 is sourced from the original manufacturer or authorized distributors?

All STF20N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF20N65M5 meets industry standards.

7.What is the process for return or replacement of STF20N65M5?

All STF20N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STF20N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF20N65M5 part is unused and in its original packaging.

Return procedure for STF20N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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