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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF21NM60N

Name: STF21NM60N
Brand: STMicroelectronics
SKU: STF21NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF21NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF21NM60N.pdf

Description:: MOSFET N-CH 600V 17A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:6,937

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Product details

Overview

STF21NM60N from STMicroelectronics is an N-channel 600 V, 17 A, 0.17 Ω R_DS(on) Power MOSFET in TO-220FP package, implementing second-generation MDmesh™ technology for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (66 nC), and low input capacitance (1900 pF), enabling high-frequency operation in offline SMPS and PFC stages.

For engineers reviewing the STF21NM60N datasheet, STF21NM60N pinout, STF21NM60N application, or STF21NM60N equivalent, key selection criteria include its 600 V V_DSS, 0.17 Ω R_DS(on) at V_GS = 10 V, 66 nC total gate charge, 150 °C max junction temperature, and TO-220FP thermal resistance of 50 °C/W (junction-to-ambient).

Technical Context

This device uses ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 600 V breakdown voltage and 8.5 A repetitive avalanche current support robust operation under transient overvoltage conditions in hard-switched topologies.

The low 0.17 Ω R_DS(on) and 66 nC Q_g enable high power density in 50–100 kHz flyback and forward converters. Its 1.5 V source-drain diode forward voltage and 372 ns reverse recovery time at T_j = 25 °C support efficient synchronous rectification and inductive load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full mains-related transients in universal-input offline converters without clamping.
R_DS(on) max	0.22 Ω @ V_GS = 10 V - Ensures ≤2.2 W conduction loss at 10 A DC, critical for thermal management in sealed enclosures.
I_D continuous	17 A @ T_C = 25 °C - Supports ≥150 W output in TO-220FP-mounted PFC boost stages with forced-air cooling.
Q_g total	66 nC - Enables <500 kHz PWM operation with standard 1 A gate drivers while maintaining <10% switching loss share.
E_AS	610 mJ - Sustains single-pulse inductive energy without failure during startup or overload in motor drives.
T_j max	150 °C - Allows operation in industrial ambient up to 85 °C with derated current per thermal resistance curves.
C_iss	1900 pF - Limits Miller-induced shoot-through risk in half-bridge configurations with fast gate drive.

Pinout & Package

STF21NM60N is housed in a TO-220FP (Full-Pak) package: insulated plastic case with internal heatsink tab, 3-pin vertical mounting, 50 °C/W R_thj-amb, and lead-free ECOPACK® compliance.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main power path collector	Internally connected to metal tab - must be electrically isolated from heatsink unless referenced to system ground.
2 (Gate)	Control electrode	High-impedance MOS gate requiring <2 Ω series resistance to suppress ringing; sensitive to ESD (±25 V rating).
3 (Source)	Reference node for gate drive	Common return for load current and gate loop - critical for minimizing dv/dt-induced false turn-on in high-side configurations.

Key Features

Feature	Design Value
Second-generation MDmesh™ structure	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. first-gen, directly improving efficiency in 65–100 kHz SMPS.
100% avalanche tested	Guarantees 8.5 A I_AS and 610 mJ E_AS performance - eliminates need for external snubbers in clamp-based flyback designs.
Low gate input resistance (2 Ω)	Enables stable gate drive with standard logic-level drivers without external damping resistors.
ECOPACK® lead-free packaging	Meets RoHS/REACH requirements with Pb-free second-level interconnect and JEDEC JESD97 marking.
Optimized body diode	372 ns t_rr and 4.6 µC Q_rr at 25 °C - reduces switching loss and EMI in discontinuous conduction mode (DCM) PFC.

Applications

AC-DC Adapter Primary Switch

Industrial PFC Boost Stage

Use Scenario: 65 W universal-input adapter operating in DCM flyback topology with 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Main high-side switch handling full mains-referenced drain voltage swing and peak currents up to 17 A.

Use Value: 0.17 Ω R_DS(on) limits conduction loss to <1.5 W at full load, while 66 nC Q_g enables clean 10 ns rise/fall times with minimal gate driver dissipation.

Use Scenario: 300 W active PFC front-end in programmable power supply, operating in CCM at 65 kHz.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 10 A RMS input current and 400 V DC bus generation.

Use Value: Low C_oss (110 pF) and 48 V/ns dv/dt capability reduce capacitive turn-off loss; 150 °C T_j rating supports compact heatsink design.

LED Driver Flyback Switch

Solar Microinverter DC-Link Switch

Use Scenario: 100 W constant-current LED driver for street lighting, using quasi-resonant flyback with valley switching.

IC Role / Device Role / Timing Role: Primary-side power switch subjected to 600 V blocking and 12 A peak drain current during each switching cycle.

Use Value: 610 mJ E_AS withstands reflected surge energy from long LED strings; 1.5 V V_SD minimizes body-diode conduction loss during dead-time.

Use Scenario: DC-DC stage in 300 W solar microinverter, stepping up PV panel voltage (30–60 V) to 400 V DC link.

IC Role / Device Role / Timing Role: High-voltage side switch in interleaved boost converter handling bidirectional current stress during MPPT transients.

Use Value: 100% avalanche testing ensures reliability against lightning-induced surges on ungrounded PV arrays; TO-220FP insulation allows direct heatsink mounting without isolation pads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP21NM60N	Same die, TO-220 (non-isolated tab); R_thj-amb = 62.5 °C/W vs. 50 °C/W for STF21NM60N.	Requires insulating pad for heatsink mounting; higher thermal resistance limits power density in space-constrained designs.	Select when cost sensitivity outweighs thermal performance and mechanical isolation is managed externally.
FDPF18N50FT	500 V V_DSS, 0.22 Ω R_DS(on), TO-220FP; lower voltage rating and higher on-resistance.	Not suitable for 230 VAC universal-input designs due to insufficient 600 V margin; limited to 115 VAC-only or DC-fed systems.	Choose only for legacy 500 V designs where STF21NM60N's 600 V rating is unnecessary and inventory consolidation is prioritized.

Compared with STP21NM60N, STF21NM60N offers superior thermal performance and built-in isolation; compared with FDPF18N50FT, it delivers 20% lower conduction loss and 20% higher voltage margin-critical for global-input industrial power supplies.

Availability

STF21NM60N is available at Aetrix Electronics and suitable for AC-DC adapters, industrial PFC modules, LED drivers, and solar microinverters requiring stable component supply across extended production lifecycles.

Supply support for STF21NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STF21NM60N belongs to the MDmesh™ Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline SMPS, PFC, and industrial motor control systems.

FAQ

What is the maximum safe operating temperature for STF21NM60N?

The absolute maximum junction temperature is 150 °C. Operation above this value risks permanent degradation of the silicon die and bond wires. Derating curves in the datasheet specify that continuous drain current drops to 10 A at T_C = 100 °C, and thermal resistance junction-to-ambient is 50 °C/W in TO-220FP configuration with standard PCB copper area.

Does STF21NM60N require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to dampen parasitic oscillation and limit peak gate current. ST recommends 4.7 Ω (as used in switching time test conditions) for standard 1 A gate drivers. Lower values (<2.2 Ω) may cause ringing; higher values (>10 Ω) increase switching losses and delay times beyond datasheet-specified 22 ns t_d(on).

Can STF21NM60N replace STP21NM60N in existing designs without modification?

Electrically yes-identical die, same pinout, and matching electrical specs-but mechanically no. STF21NM60N's TO-220FP has an insulated tab, eliminating the need for a mica pad, whereas STP21NM60N's TO-220 requires electrical isolation from the heatsink. Layout changes may be needed to accommodate different mounting hole spacing and thermal interface requirements.

Is STF21NM60N suitable for use in automotive applications?

No-STF21NM60N is not qualified to AEC-Q101 and lacks automotive-grade screening, temperature range extension (−40 to 150 °C), or enhanced reliability testing. It is rated for industrial use only (−55 to 150 °C storage, 150 °C operating junction). For automotive traction inverters or onboard chargers, ST's STD12N60DM6 or similar AEC-Q101-compliant MDmesh™ devices should be selected instead.

STF21NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 220mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF21NM60N FAQ

1.How can I place an order for STF21NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STF21NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF21NM60N reliable?

The price and inventory of STF21NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF21NM60N is usually 5 days.

3.What payment methods are accepted for STF21NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF21NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF21NM60N?

STF21NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF21NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF21NM60N?

For technical support, including STF21NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF21NM60N requirements.

6.How does Aetrix verify that STF21NM60N is sourced from the original manufacturer or authorized distributors?

All STF21NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF21NM60N meets industry standards.

7.What is the process for return or replacement of STF21NM60N?

All STF21NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STF21NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF21NM60N part is unused and in its original packaging.

Return procedure for STF21NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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