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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF22N60M6

Name: STF22N60M6
Brand: STMicroelectronics
SKU: STF22N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF22N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF22N60M6.pdf

Description:: MOSFET N-CH 600V 15A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:4,727

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Product details

Overview

STF22N60M6 from STMicroelectronics is an N-channel 600 V, 15 A, 196 mΩ (typ.) MDmesh™ M6 superjunction power MOSFET in TO-220FP package, designed for high-efficiency switching in hard-switched and resonant topologies including LLC and boost PFC converters. It features 100% avalanche tested ruggedness, Zener-protected gate, low gate input resistance, and 2.5 kV insulation withstand voltage between leads and heat sink.

For engineers reviewing the STF22N60M6 datasheet, STF22N60M6 pinout, STF22N60M6 application, or STF22N60M6 equivalent, key selection criteria include R_DS(on) temperature stability, dv/dt ruggedness (100 V/ns), E_AS (230 mJ), C_oss eq. (181 pF), and SOA compliance up to 10 ms at 150 °C junction temperature.

Technical Context

This MOSFET implements ST's MDmesh™ M6 silicon technology, delivering improved R_DS(on)/area over prior generations while maintaining robust switching behavior. Its 4.7 Ω intrinsic gate resistance and 20 nC total gate charge enable fast, controllable turn-on/turn-off with reduced switching losses in high-frequency applications.

The device integrates a co-packaged, Zener-protected body diode with 1.6 V forward voltage (I_SD = 15 A) and 217 ns reverse recovery time (T_j = 25 °C). Its 4.2 °C/W junction-to-case thermal resistance supports stable operation under continuous 15 A conduction at T_case = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in hard-switched converters with margin.
R_DS(on) max	230 mΩ @ 7.5 A, 10 V - Enables low conduction loss in 15 A continuous PFC stages.
Q_g	20 nC - Supports efficient gate drive design with standard 1-A peak drivers at 100–300 kHz.
E_AS	230 mJ - Guarantees unclamped inductive switching reliability without external snubbers.
C_oss eq.	181 pF @ 0–480 V - Minimizes capacitive turn-on loss in zero-voltage switching (ZVS) LLC designs.
T_j max	150 °C - Allows full-rated current operation in industrial ambient up to 85 °C with proper heatsinking.
dv/dt ruggedness	100 V/ns - Ensures noise-immune operation in high-di/dt environments like motor drives and SMPS.

Pinout & Package

STF22N60M6 uses the TO-220FP (Full-Pak) package: insulated plastic case with metal tab electrically isolated from drain, enabling direct mounting to heatsink without insulator. Dimensions comply with ST's mechanical drawing 7012510_Rev_12_B.

Pin/Terminal	Circuit Role	Design Meaning
D (Pin 2)	Drain	Main high-side power terminal; connected to DC bus or transformer primary; electrically isolated from heatsink via molded plastic.
G (Pin 1)	Gate	Control input; low 4.7 Ω intrinsic resistance reduces gate driver power loss and improves Miller immunity.
S (Pin 3)	Source	Power return path and reference for gate drive; tied to low-side switch node or ground in half-bridge configurations.

Key Features

Feature	Design Value
MDmesh™ M6 silicon	230 mΩ R_DS(on) at 600 V enables higher power density vs. previous-generation SJ MOSFETs.
Zener-protected gate	±25 V gate-source rating with integrated protection prevents ESD-induced gate oxide failure during handling and layout.
100% avalanche tested	Each unit validated for 2.9 A repetitive avalanche current and 230 mJ single-pulse energy per JEDEC JESD24-11.
Low C_oss eq. & Q_gd	181 pF C_oss eq. and 9.5 nC Q_gd reduce switching loss and improve ZVS initiation in resonant converters.
Insulated TO-220FP	2.5 kV RMS isolation between all three leads and heatsink eliminates need for thermal pads in grounded-sink layouts.

Applications

LLC Resonant Converter

Boost PFC Stage

Use Scenario: Primary-side switch in 300–500 W server PSU LLC half-bridge with 300 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side synchronous switch operating in zero-voltage switching mode with body diode commutation.

Use Value: Low C_oss eq. (181 pF) and fast trr (217 ns) minimize dead-time loss and ensure reliable ZVS across line/load range.

Use Scenario: Switching element in continuous conduction mode (CCM) boost PFC front-end for industrial AC-DC supplies.

IC Role / Device Role / Timing Role: Main power switch controlling inductor current to shape sinusoidal input current.

Use Value: 15 A continuous rating and 4.2 °C/W R_th(j-c) sustain full load at 85 °C ambient without derating.

Industrial Motor Drive Inverter

High-Voltage DC-DC Converter

Use Scenario: Upper-leg IGBT replacement in 400 V bus 3-phase inverter for HVAC compressors.

IC Role / Device Role / Timing Role: Hard-switched high-side switch with active Miller clamping requirement.

Use Value: 100 V/ns dv/dt ruggedness and Zener gate protection prevent false turn-on and gate rupture under high di/dt noise.

Use Scenario: Primary switch in 600 V input telecom DC-DC converter with 100–200 kHz phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-reliability power switch subjected to repeated unclamped inductive switching events.

Use Value: 230 mJ E_AS rating ensures safe operation during transient overloads without external clamping circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7	600 V, 190 mΩ (typ.), TO-220; no integrated gate Zener; lower C_oss eq. (150 pF)	Lacks gate protection; requires external gate clamp; better for ultra-high-frequency ZVS but less robust in noisy environments	Select when gate drive circuit includes discrete Zener clamping and layout minimizes coupling noise.
STW20N60M2	600 V, 220 mΩ (typ.), TO-247; MDmesh™ M2 generation; higher Q_g (32 nC); no insulation rating	Higher switching loss; requires insulated mounting hardware; not rated for 2.5 kV lead-to-heatsink isolation	Choose only if TO-247 footprint is mandatory and isolation is handled externally via bushings or pads.

Compared with IPP60R190C7 and STW20N60M2, STF22N60M6 uniquely combines certified 2.5 kV insulation, Zener gate protection, and M6-generation R_DS(on)/C_oss balance-making it optimal for space-constrained, safety-critical industrial PFC and resonant converters where reliability and layout simplicity are prioritized over marginal efficiency gains.

Availability

STF22N60M6 is available at Aetrix Electronics and suitable for LLC resonant converters, boost PFC stages, industrial motor drive inverters, and high-voltage DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STF22N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, power, and microcontroller solutions with vertical manufacturing capabilities and broad IP portfolio.

STF22N60M6 belongs to the MDmesh™ M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial, computing, and telecom power supplies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF22N60M6 supports 9.5 A continuous drain current at T_case = 100 °C, as specified in Table 1 of DS12823. This derating reflects thermal limits of the TO-220FP package and ensures safe operation within its 4.2 °C/W R_th(j-c) constraint while maintaining junction temperature ≤150 °C.

Does STF22N60M6 require external gate protection?

No. The device integrates a Zener diode between gate and source, providing ±25 V gate-source voltage protection. This eliminates the need for external gate clamps in most applications, though layout best practices (short gate traces, local decoupling) remain essential for noise immunity.

How does the TO-220FP package differ from standard TO-220 in thermal and isolation performance?

TO-220FP features an insulated plastic body that electrically isolates all three leads-including the metal tab-from the heatsink. It achieves 2.5 kV RMS insulation withstand voltage, unlike standard TO-220 which requires insulating pads or washers for grounded heatsinks.

Is STF22N60M6 suitable for use in zero-voltage switching (ZVS) topologies?

Yes. With 181 pF equivalent output capacitance (C_oss eq.) and 217 ns body diode reverse recovery time, STF22N60M6 enables reliable ZVS operation in LLC and phase-shifted full-bridge converters up to 300 kHz, provided dead time and resonant tank design align with its stored energy characteristics.

STF22N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 230mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF22N60M6 FAQ

1.How can I place an order for STF22N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF22N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF22N60M6 reliable?

The price and inventory of STF22N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF22N60M6 is usually 5 days.

3.What payment methods are accepted for STF22N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF22N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF22N60M6?

STF22N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF22N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF22N60M6?

For technical support, including STF22N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF22N60M6 requirements.

6.How does Aetrix verify that STF22N60M6 is sourced from the original manufacturer or authorized distributors?

All STF22N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF22N60M6 meets industry standards.

7.What is the process for return or replacement of STF22N60M6?

All STF22N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STF22N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF22N60M6 part is unused and in its original packaging.

Return procedure for STF22N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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