STMicroelectronics STF22NM60N

Overview

STF22NM60N from STMicroelectronics is an N-channel 600 V, 220 mΩ (max), 16 A MDmesh II Power MOSFET in TO-220FP package, optimized for high-efficiency AC-DC and DC-DC converters. It features 100% avalanche tested ruggedness, low gate charge (44 nC), and low input capacitance (1330 pF), enabling fast switching with reduced conduction and switching losses in hard-switched PFC and SMPS stages.

For engineers reviewing the STF22NM60N datasheet, STF22NM60N pinout, STF22NM60N application, or STF22NM60N equivalent, key selection criteria include its 600 V V_DS, 200 mΩ typical R_DS(on), 44 nC total gate charge, 296 ns reverse recovery time, and TO-220FP thermal resistance of 4.17 °C/W - all critical for high-voltage, medium-power industrial and telecom power supply designs.

Technical Context

This device employs ST's second-generation MDmesh vertical strip architecture to minimize specific on-resistance and gate charge simultaneously. Its 600 V breakdown voltage and 15 V/ns dv/dt capability support operation in high-voltage flyback, LLC resonant, and active clamp forward topologies without parasitic turn-on.

The integrated body diode exhibits 1.6 V forward voltage at 16 A and 350 ns reverse recovery time with 4.7 µC Q_rr, enabling reliable synchronous rectification and snubberless operation in high-frequency inductive switching circuits where diode recovery stress must be tightly controlled.

Key Specifications

Pinout & Package

STF22NM60N uses the TO-220FP (Full-Pak) package: insulated plastic case with internal isolation between leads and tab, rated for 2.5 kV RMS insulation withstand voltage. The metal tab is electrically connected to the drain (D), enabling direct heatsinking without insulating pads while maintaining creepage/clearance compliance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP22NM60N, STF22NM60N trades 3.17 °C/W higher junction-to-case thermal resistance for 2.5 kV isolation and simplified mechanical integration; versus IPP60R220C6, it offers superior avalanche ruggedness (300 mJ vs. 220 mJ) and lower cost in volume telecom applications.

Availability

STF22NM60N is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, telecom rectifier modules, and solar microinverter DC-DC stages requiring stable component supply and long-term production continuity.

Supply support for STF22NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switched-mode power supplies where low R_DS(on) × Q_g FoM and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF22NM60N supports 10 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6334 Rev 6. This rating accounts for thermal derating due to junction-to-case resistance (4.17 °C/W) and maximum allowable junction temperature (150 °C), ensuring safe operation in enclosed, convection-cooled environments without forced airflow.

Does the TO-220FP package require an insulating thermal pad?

No - the TO-220FP package integrates reinforced electrical insulation between the drain-connected metal tab and external heatsink, rated for 2.5 kV RMS withstand voltage per IEC 60950. This eliminates the need for mica or silicone pads, reducing thermal interface resistance by ~0.5 °C/W and simplifying mechanical assembly in high-volume power supply manufacturing.

How does the body diode performance compare to standard silicon diodes?

The integrated body diode has a forward voltage of 1.6 V at 16 A and reverse recovery time of 350 ns with 4.7 µC Q_rr. While slower than discrete SiC Schottky diodes, its parameters are optimized for hard-switched PFC and LLC applications where moderate trr avoids excessive voltage overshoot while maintaining low conduction loss - unlike fast recovery diodes, it requires no external anti-parallel diode.

Can STF22NM60N replace STP22NM60N in existing designs?

Yes, with mechanical and thermal considerations: both share identical die characteristics and pinout, but STF22NM60N's TO-220FP package adds 3.17 °C/W higher R_thJC due to internal insulation layers. Designers must verify heatsink interface temperature rise and confirm 2.5 kV isolation meets system safety requirements before drop-in replacement.