STMicroelectronics STF23N80K5
- Part No.:
- STF23N80K5
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STF23N80K5.pdf
- Description:
- MOSFET N-CH 800V 16A TO220FP
- Quantity:
- Payment:

- Shipping:

Inventory:921
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Product details
Overview
STF23N80K5 from STMicroelectronics is an 800 V, 16 A N-channel Power MOSFET in TO-220FP package, fabricated with MDmesh K5 vertical structure technology. It delivers 230 mΩ typ. RDS(on), 33 nC total gate charge, and 400 mJ single-pulse avalanche energy-enabling high-efficiency, high-density switch-mode power supplies and industrial motor drives.
For engineers reviewing the STF23N80K5 datasheet, STF23N80K5 pinout, STF23N80K5 application, or STF23N80K5 equivalent, key selection criteria include its 2.5 kV insulation withstand voltage, 50 V/ns MOSFET dv/dt ruggedness, Zener-protected gate, and 100% avalanche-tested reliability for high-voltage hard-switching topologies.
Technical Context
This device employs ST's MDmesh K5 proprietary vertical superjunction architecture to simultaneously minimize conduction loss (RDS(on) = 230 mΩ typ.) and switching loss (Qg = 33 nC, Ciss = 1000 pF). Its ultra-low figure of merit (FoM = RDS(on) × Qg ≈ 7.6 nC·Ω) targets efficiency-critical 600–800 V applications.
The integrated source-drain diode features 410 ns typical reverse recovery time (TJ = 25 °C) and 7 µC Qrr, while the 2.5 kV isolation rating enables direct mounting on insulated heat sinks without additional barriers-critical for compact, high-reliability AC-DC front-ends and UPS systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 800 V - supports 650 V AC mains designs with ≥20% margin against line surges |
| RDS(on) max | 280 mΩ - limits conduction loss to ≤3.6 W at 16 A continuous drain current |
| Qg | 33 nC - enables fast, low-loss switching with standard 1 A gate drivers |
| EAS | 400 mJ - sustains unclamped inductive switching events without failure |
| VISO | 2.5 kV RMS - eliminates need for insulating pads when mounted on grounded heatsinks |
| dv/dt ruggedness | 50 V/ns - prevents spurious turn-on during high-slew-rate transients in PFC stages |
| TJ max | 150 °C - supports operation in sealed industrial enclosures without forced air cooling |
Pinout & Package
TO-220FP (Full-Pak) package: insulated case, vertical lead frame, single-side heat dissipation. Mounts directly to heatsink via backside metal tab; no insulator required due to 2.5 kV isolation rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Pin 1) | Gate | Controls channel conduction; Zener-protected ±30 V rating prevents ESD damage during handling |
| D (Pin 2) | Drain | High-voltage output node; connected internally to insulated metal tab for thermal path |
| S (Pin 3) | Source | Reference node for gate drive; ties to power ground in buck/PFC configurations |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh K5 vertical structure | Reduces RDS(on) by 35% vs prior K3 generation while maintaining 800 V rating |
| Ultra-low FoM (RDS(on) × Qg) | ≈7.6 nC·Ω - enables >96% efficiency in 3.3 kW PFC stages at 100 kHz |
| Zener-protected gate | Integrated 30 V clamp eliminates need for external gate protection components |
| 100% avalanche tested | Each unit validated to 400 mJ EAS ensures robustness in real-world overvoltage events |
| TO-220FP insulation | 2.5 kV RMS isolation allows direct heatsink mounting-reducing thermal resistance by 0.8 °C/W |
Applications
| Industrial Motor Drives | Server & Telecom PSU |
|---|---|
Use Scenario: Three-phase inverter stage in 5–10 kW variable-frequency drives operating at 4–8 kHz switching frequency. IC Role / Device Role / Timing Role: High-side/low-side switching element in IGBT replacement topology; handles 800 V DC bus with 16 A RMS phase current. Use Value: 230 mΩ RDS(on) reduces conduction loss by 2.1 W per device vs legacy 400 mΩ MOSFETs, lowering heatsink size by 30%. | Use Scenario: Active clamp forward or LLC resonant converter in 3 kW server power supply with 96% efficiency target. IC Role / Device Role / Timing Role: Primary-side high-voltage switch; operates at 200–500 kHz with zero-voltage switching assistance. Use Value: 33 nC Qg and 50 V/ns dv/dt ruggedness enable reliable soft-switching across full load range without gate oscillation. |
| Uninterruptible Power Supplies | EV Charging Stations |
Use Scenario: Bidirectional DC-DC stage in online UPS converting 400 V DC battery bank to 380 V DC bus for inverter input. IC Role / Device Role / Timing Role: Synchronous rectifier and boost switch in dual-active-bridge topology; subjected to repetitive avalanche stress. Use Value: 400 mJ EAS rating permits safe operation during grid fault transitions without snubber redesign. | Use Scenario: Isolated DC-DC converter in 11 kW AC-to-DC EV charger handling 600 V AC input rectified to 800 V DC bus. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge; exposed to high dv/dt during ZVS transitions. Use Value: 2.5 kV isolation rating allows direct heatsink mounting-cutting assembly steps and thermal interface resistance by 40%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW20N80K5 | Same MDmesh K5 process, but TO-247 package; RDS(on) = 250 mΩ, Qg = 35 nC, higher thermal capability (RthJC = 1.5 °C/W) | Preferred for >20 A continuous current or forced-air-cooled systems where footprint is secondary to thermal margin | Select when junction temperature must stay <125 °C under 20 A load; TO-220FP variant insufficient for sustained >16 A |
| IPP60R190C7 | Infineon CoolMOS C7; 600 V rating, 190 mΩ RDS(on), 32 nC Qg; no integrated Zener, lower VISO (no isolation rating) | Requires external gate protection and insulating pad; limited to 650 V AC systems without derating | Choose only if system voltage stays ≤600 V and gate driver includes clamping; not drop-in for 800 V designs |
Compared with STW20N80K5 and IPP60R190C7, STF23N80K5 uniquely balances 800 V capability, TO-220FP insulation, and Zener protection-making it optimal for space-constrained, high-reliability 650–800 V AC-DC converters where safety certification and component count reduction are critical.
Availability
STF23N80K5 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power supplies, and EV charging stations requiring stable component supply and long-term design-in support.
Supply support for STF23N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.
The MDmesh K5 product line targets high-efficiency, high-voltage power conversion-designed specifically for 600–900 V industrial, telecom, and renewable energy applications demanding low RDS(on), low Qg, and rugged avalanche performance.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STF23N80K5 supports 10 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS11241. This derating from 16 A at 25 °C reflects thermal limitations of the TO-220FP package, with RthJC = 3.6 °C/W defining the junction-to-case thermal path.
Does this MOSFET require external gate protection?
No. The STF23N80K5 integrates a Zener diode between gate and source, providing ±30 V clamping. This eliminates the need for external gate protection components in standard gate-drive circuits, reducing BOM count and PCB area while maintaining robustness against ESD and transient overvoltage.
Can STF23N80K5 be used in avalanche mode during normal operation?
Yes-every unit is 100% tested for single-pulse avalanche energy (EAS = 400 mJ at TJ = 25 °C). While not intended for continuous avalanche operation, it safely absorbs inductive energy spikes during hard-switching faults or unclamped inductive load transitions without degradation.
How does the TO-220FP package differ from standard TO-220 in thermal performance?
The TO-220FP (Full-Pak) variant features an insulated metal tab rated for 2.5 kV RMS, enabling direct heatsink mounting without insulating washers. Its RthJC = 3.6 °C/W matches standard TO-220, but eliminates thermal interface resistance from insulators-yielding up to 0.8 °C/W net improvement in system-level thermal resistance.
STF23N80K5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ K5
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 280mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1000 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STF23N80K5 FAQ
1.How can I place an order for STF23N80K5 through Aetrix?
Please submit a Request for Quotation (RFQ) for STF23N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STF23N80K5 reliable?
The price and inventory of STF23N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF23N80K5 is usually 5 days.
3.What payment methods are accepted for STF23N80K5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF23N80K5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STF23N80K5?
STF23N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STF23N80K5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STF23N80K5?
For technical support, including STF23N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF23N80K5 requirements.
6.How does Aetrix verify that STF23N80K5 is sourced from the original manufacturer or authorized distributors?
All STF23N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF23N80K5 meets industry standards.
7.What is the process for return or replacement of STF23N80K5?
All STF23N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STF23N80K5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STF23N80K5 part is unused and in its original packaging.
Return procedure for STF23N80K5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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