STMicroelectronics STF23NM50N

Overview

STF23NM50N from STMicroelectronics is an N-channel 500 V, 17 A Power MOSFET in TO-220FP package, built on MDmesh™ II technology. It delivers 162 mΩ typical R_DS(on), 45 nC total gate charge, and 100% avalanche-tested ruggedness-enabling high-efficiency flyback and PFC stages in industrial SMPS operating up to 150 °C junction temperature.

For engineers reviewing the STF23NM50N datasheet, STF23NM50N pinout, STF23NM50N application, or STF23NM50N equivalent, key selection criteria include its 500 V V_DS, low C_iss (1330 pF), fast switching (t_d(off) = 71 ns), integrated body diode with 286 ns t_rr, and TO-220FP thermal resistance of 4.17 °C/W (R_thJC).

Technical Context

This device uses ST's second-generation MDmesh vertical strip architecture to minimize conduction and switching losses simultaneously. Its 162 mΩ R_DS(on) at V_GS = 10 V and 8.5 A, combined with 45 nC Q_g, enables high-frequency operation in hard-switched topologies without sacrificing efficiency.

The integrated source-drain diode features 1.5 V forward voltage at 17 A and 286 ns reverse recovery time at 150 °C, supporting continuous conduction mode (CCM) PFC designs. The 15 V/ns dv/dt immunity and 254 mJ single-pulse avalanche energy ensure robustness under transient overvoltage conditions.

Key Specifications

Pinout & Package

STF23NM50N uses the TO-220FP (Full-Pak) package: insulated plastic housing with metal tab acting as drain terminal, enabling direct PCB mounting without isolation hardware. Package height is 10.0–10.4 mm; lead pitch is 2.54 mm; drain tab is electrically isolated from leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 500 V Power MOSFET applications.

Compared with STP23NM50N, STF23NM50N trades 3.17 °C/W higher R_thJC for electrical isolation and simplified assembly; versus IPP60R190C7, it offers 3 A higher current rating and 150 °C operation at the cost of 8 nC higher Q_g and no 650 V margin.

Availability

STF23NM50N is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, motor drive inverters, and EV charger front-ends requiring stable component supply across multi-year production cycles.

Supply support for STF23NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STF23NM50N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in industrial power conversion systems where ruggedness and thermal reliability are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF23NM50N supports 11 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6645 Rev 5. This derating reflects thermal limitations of the TO-220FP package and must be respected to maintain 150 °C maximum junction temperature under sustained load.

Does STF23NM50N have an integrated body diode, and what are its key parameters?

Yes, it integrates a fast-recovery source-drain diode rated for 17 A continuous and 68 A pulsed current. At 17 A and 25 °C, forward voltage is ≤1.5 V; reverse recovery time is 286 ns at 150 °C with 100 A/µs di/dt, and Q_rr is 3.7 µC-critical for PFC and synchronous rectifier designs.

Can STF23NM50N replace STP23NM50N in existing TO-220 footprint designs?

No-STF23NM50N uses TO-220FP with insulated tab and different lead spacing (2.54 mm vs. 2.4–2.7 mm), while STP23NM50N uses standard TO-220 with conductive tab. Mechanical and thermal interfaces differ; PCB layout and isolation strategy must be redesigned for STF23NM50N.

What is the gate threshold voltage range, and how does it affect drive circuit design?

V_GS(th) is 2–4 V (min/typ/max) at 250 µA ID, per Table 4. This wide range necessitates gate drive voltages ≥10 V to ensure full enhancement across temperature and process variation; 5 V logic-level drives are insufficient and risk linear-mode operation and thermal runaway.