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STMicroelectronics STF23NM60N
- Part No.:
- STF23NM60N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STF23NM60N.pdf
- Description:
- MOSFET N-CH 600V 19A TO220FP
- Quantity:
- Payment:
- Shipping:
Inventory:5,681
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Product details
Overview
STF23NM60N from STMicroelectronics is an N-channel 600 V, 0.150 Ω RDS(on), 19 A (TC = 25 °C) Power MOSFET in TO-220FP package, featuring second-generation MDmesh™ technology for high-efficiency switching in offline SMPS, PFC stages, and industrial motor drives.
For engineers reviewing the STF23NM60N datasheet, STF23NM60N pinout, STF23NM60N application, or STF23NM60N equivalent, key selection criteria include avalanche ruggedness (9 A IAS, 700 mJ EAS), low gate charge (60 nC total), fast switching (td(off) = 90 ns), and thermal resistance (Rthj-case = 3.6 °C/W).
Technical Context
This device uses ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 600 V VDSS, 0.150 Ω RDS(on) at VGS = 10 V, and 60 nC Qg enable high-frequency operation in hard-switched topologies up to 100 kHz.
The integrated source-drain diode exhibits trr = 470 ns and Qrr = 7 µC at Tj = 25 °C, supporting quasi-resonant and ZVS designs. Thermal performance is defined by Rthj-case = 3.6 °C/W and Tj(max) = 150 °C, requiring heatsinking for continuous 19 A operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - supports 400 V AC mains input with 50% safety margin in offline converters |
| RDS(on) max | 0.150 Ω @ VGS = 10 V - enables <1.4 W conduction loss at 19 A DC |
| ID (cont.) | 19 A @ TC = 25 °C - rated for high-current primary-side switching with external heatsink |
| Qg | 60 nC - reduces gate drive power and enables use with standard 1 A peak drivers |
| EAS | 700 mJ - withstands unclamped inductive energy without failure in flyback or LLC resonant circuits |
| tr/tf | 15/36 ns - supports >200 kHz switching with minimal overlap loss in half-bridge configurations |
| Rthj-case | 3.6 °C/W - requires ≥12 cm² 2 mm thick aluminum heatsink for 19 A continuous operation |
Pinout & Package
STF23NM60N is housed in TO-220FP (full-pack) package - a variant of TO-220 with insulated flange, enabling direct mounting to heatsink without insulator washer. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Low-input-capacitance node (Ciss = 2050 pF); requires <10 Ω series gate resistor to damp ringing |
| 2 (Drain) | High-voltage power terminal | Internally connected to metal tab; electrically tied to heatsink - must be isolated if heatsink is grounded |
| 3 (Source) | Power return and reference | Common return path for load current and gate drive; defines local ground for driver IC placement |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees single-pulse ruggedness to 9 A and 700 mJ - eliminates need for external snubbers in cost-sensitive designs |
| Low gate charge (Qg = 60 nC) | Reduces gate driver power dissipation by >40% vs. legacy 600 V MOSFETs - enables use of low-cost SOT-23 drivers |
| Low RDS(on) × Qg figure-of-merit (9 nΩ·C) | Optimizes trade-off between conduction and switching loss - ideal for high-density 100–300 W adapters |
| MDmesh™ second-generation structure | Delivers 25% lower RDS(on) than first-gen devices at same voltage rating - improves full-load efficiency by 0.8–1.2% |
Applications
| Server PSU Primary Switch | Industrial PFC Boost Stage |
|---|---|
Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 19 A peak drain current during 300 V DC bus switching. Use Value: 0.150 Ω RDS(on) limits conduction loss to ≤1.4 W at full load; 60 nC Qg enables clean 10 ns rise time with 4.7 Ω gate resistor. | Use Scenario: Three-phase industrial PFC rectifier delivering 5 kW at 98.2% efficiency with interleaved boost stages. IC Role / Device Role / Timing Role: Fast-switching boost switch in each phase, operating at 65 kHz with 19 A RMS current per device. Use Value: 470 ns diode trr and 7 µC Qrr reduce turn-on loss by 35% vs. standard superjunction MOSFETs - critical for thermal management at 50 °C ambient. |
| EV Onboard Charger (OBC) DC-DC Stage | Solar Microinverter Half-Bridge |
Use Scenario: 3.3 kW bidirectional OBC DC-DC stage converting 400 V battery to 400 V grid interface using phase-shifted full-bridge. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch with ZVS-assisted turn-on and hard-switched turn-off. Use Value: 700 mJ EAS rating ensures robustness against transformer leakage inductance spikes during light-load ZVS transitions. | Use Scenario: 300 W solar microinverter with two-stage conversion: MPPT boost + H-bridge inverter feeding 230 V AC grid. IC Role / Device Role / Timing Role: Low-side switch in 50 kHz H-bridge, conducting 12 A RMS with 100% duty cycle capability. Use Value: TO-220FP insulated flange allows direct heatsink mounting without isolation pad - reducing thermal resistance by 0.5 °C/W in compact PCB layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP23NM60N | Same die, TO-220 package (non-insulated flange); Rthj-case = 0.83 °C/W | Requires insulating washer when mounted to grounded heatsink; better for high-power (>50 W) discrete heatsink designs | Select when thermal budget permits lower Rthj-case and mechanical isolation is managed externally |
| FDPF19N60NZ | 600 V, 0.180 Ω, 19 A, TO-220FP; higher RDS(on), 72 nC Qg, no avalanche rating | Lacks 100% avalanche test; unsuitable for unclamped inductive loads or flyback snubberless designs | Choose only for cost-sensitive non-avalanche-critical applications where 0.03 Ω higher RDS(on) is acceptable |
Compared with STP23NM60N, STF23NM60N trades 2.7× higher thermal resistance for electrical isolation; versus FDPF19N60NZ, it delivers 17% lower conduction loss and guaranteed avalanche survival - critical for reliability in industrial power supplies.
Availability
STF23NM60N is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, EV onboard chargers, and solar microinverters requiring stable component supply across multi-year production cycles.
Supply support for STF23NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.
The MDmesh™ Power MOSFET product line targets high-efficiency AC-DC and DC-DC conversion, emphasizing low RDS(on) × Qg FoM and ruggedness for mission-critical power systems.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STF23NM60N supports 11.7 A continuous drain current at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects junction temperature limits (Tj(max) = 150 °C) and thermal resistance (Rthj-case = 3.6 °C/W). Operation above this current requires forced-air cooling or reduced ambient temperature.
Does STF23NM60N have a fully rated body diode for synchronous rectification?
Yes - the integrated source-drain diode is rated for 19 A continuous (ISD) and 76 A pulsed (ISDM) with VSD = 1.3 V at ISD = 19 A. Its reverse recovery characteristics (trr = 470 ns, Qrr = 7 µC) are characterized for use in synchronous rectification, though external Schottky diodes may be preferred for <100 ns trr requirements.
Can STF23NM60N replace STP23NM60N without board redesign?
No - while both share identical die and electrical specs, STF23NM60N uses TO-220FP (insulated flange), whereas STP23NM60N uses standard TO-220 (conductive flange). Mounting hole alignment matches, but electrical isolation requirement changes: STF23NM60N allows direct heatsink contact, while STP23NM60N mandates insulating hardware.
Is STF23NM60N compliant with RoHS and REACH regulations?
Yes - STF23NM60N is manufactured in ST's ECOPACK®-compliant TO-220FP package with lead-free second-level interconnect, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The "ECOPACK" marking appears on the package and inner box label per JEDEC JESD97.
STF23NM60N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2050 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STF23NM60N FAQ
1.How can I place an order for STF23NM60N through Aetrix?
Please submit a Request for Quotation (RFQ) for STF23NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STF23NM60N reliable?
The price and inventory of STF23NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF23NM60N is usually 5 days.
3.What payment methods are accepted for STF23NM60N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF23NM60N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STF23NM60N?
STF23NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STF23NM60N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STF23NM60N?
For technical support, including STF23NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF23NM60N requirements.
6.How does Aetrix verify that STF23NM60N is sourced from the original manufacturer or authorized distributors?
All STF23NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF23NM60N meets industry standards.
7.What is the process for return or replacement of STF23NM60N?
All STF23NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STF23NM60N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STF23NM60N part is unused and in its original packaging.
Return procedure for STF23NM60N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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