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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF24N60DM2

Name: STF24N60DM2
Brand: STMicroelectronics
SKU: STF24N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF24N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF24N60DM2.pdf

Description:: MOSFET N-CH 600V 18A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF24N60DM2 from STMicroelectronics is a high-voltage N-channel MDmesh DM2 Power MOSFET in TO-220FP package, rated 600 V V_DS, 175 mΩ typ. R_DS(on), and 18 A continuous drain current at T_C = 25 °C. It integrates a fast-recovery body diode with Q_rr = 956 nC and t_rr = 155 ns, enabling high-efficiency ZVS phase-shift and bridge-topology converters.

For engineers reviewing the STF24N60DM2 datasheet, STF24N60DM2 pinout, STF24N60DM2 application, or STF24N60DM2 equivalent, key selection criteria include its 40 V/ns diode dv/dt ruggedness, 50 V/ns MOSFET dv/dt capability, 100% avalanche-tested reliability (E_AS = 180 mJ), low 29 nC total gate charge, and Zener-protected gate structure for robust drive interface design.

Technical Context

This device belongs to ST's MDmesh DM2 series, engineered specifically for high-frequency, high-efficiency hard-switching and resonant topologies. Its optimized cell structure delivers ultra-low Q_rr/t_rr while maintaining low R_DS(on) - critical for minimizing switching losses in PFC stages and LLC half-bridges.

The TO-220FP package provides insulated mounting (V_ISO = 2.5 kV RMS) and 4.2 °C/W junction-to-case thermal resistance, supporting thermally demanding industrial power supplies. The Zener-protected gate ensures immunity to transient overvoltage during gate drive transients without external clamping.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus designs with ≥50% voltage margin for surge and ringing
R_DS(on) max	200 mΩ - enables low conduction loss at 18 A, reducing I²R heating in continuous operation
Q_g	29 nC - allows fast, low-power gate driving with standard 1-A drivers at >100 kHz switching
t_rr	155 ns - minimizes commutation loss and EMI in synchronous rectification and bridge legs
E_AS	180 mJ - guarantees unclamped inductive switching survivability in real-world fault conditions
dv/dt ruggedness	50 V/ns - prevents spurious turn-on during high-slew-rate voltage transients in high-side configurations
V_ISO	2.5 kV RMS - permits direct heatsink mounting without isolation hardware in AC/DC front-ends

Pinout & Package

Package: TO-220FP type B - insulated plastic package with integral heat sink tab, 4.2 °C/W R_thJC, suitable for forced-air or chassis-mounted thermal management.

Pin/Terminal	Circuit Role	Design Meaning
D (Pin 2)	Drain	Main high-voltage power terminal; electrically connected to metal tab for thermal path and electrical reference
G (Pin 1)	Gate	Control input with ±25 V rating and integrated Zener protection; requires <7 Ω gate resistor for optimal dv/dt immunity
S (Pin 3)	Source	Power return node; referenced to gate for threshold control; forms common node with body diode cathode

Key Features

Feature	Design Value
Fast-recovery body diode	Q_rr = 956 nC, t_rr = 155 ns - reduces reverse recovery loss by >60% vs standard MOSFETs in bridge-leg freewheeling
Extremely low gate charge	Q_g = 29 nC, Q_gd/Q_gs = 2.0 - enables clean Miller plateau transition and predictable turn-off timing
Zener-protected gate	Integrated 25 V bidirectional clamp - eliminates need for external gate Zener in noisy industrial environments
100% avalanche tested	E_AS = 180 mJ at T_J = 25 °C - ensures single-pulse ruggedness across full temperature range without derating
High dv/dt ruggedness	50 V/ns MOSFET, 40 V/ns diode - suppresses false triggering in high-side half-bridge and phase-shifted full-bridge layouts

Applications

Industrial AC/DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: Active clamp forward and asymmetric half-bridge converters operating at 100–300 kHz with 380–400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 18 A peak current and 600 V blocking; body diode conducts during dead-time freewheeling.

Use Value: Low Q_rr and soft recovery reduce EMI generation and snubber losses, improving efficiency by 0.8–1.2% at full load.

Use Scenario: High-density 3 kW telecom rectifier modules using interleaved PFC + LLC resonant conversion.

IC Role / Device Role / Timing Role: PFC boost switch with ZVS-assisted turn-on; operates in continuous conduction mode with 18 A RMS current.

Use Value: 175 mΩ R_DS(on) and 29 nC Q_g enable >96.5% system efficiency at 230 V AC input and full load.

Phase-Shifted Full-Bridge Converters

Motor Drive Inverter Stages

Use Scenario: Isolated 5–10 kW battery chargers with variable-frequency ZVS control and 400–800 V DC link.

IC Role / Device Role / Timing Role: Lagging-leg switch subjected to hard-commutated turn-off and body-diode conduction during phase shift.

Use Value: 155 ns t_rr and 12.5 A I_RRM prevent voltage overshoot and oscillation during zero-voltage switching transitions.

Use Scenario: 3-phase inverter stage in HVAC compressors and industrial servo drives with 600 V DC bus and 15–20 A motor current.

IC Role / Device Role / Timing Role: Upper-leg switching device in 6-pack configuration; handles repetitive avalanche stress during short-circuit events.

Use Value: 100% avalanche testing and 180 mJ E_AS ensure reliable short-circuit withstand time of ≥2 µs without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7	R_DS(on) = 190 mΩ, Q_rr = 1.1 µC, no integrated gate Zener	Higher Q_rr increases bridge-leg losses; requires external gate protection	Preferable only when lower R_DS(on) outweighs diode recovery penalty and Zener omission is acceptable
IXFH32N60X3	R_DS(on) = 180 mΩ, t_rr = 190 ns, TO-247 package, no insulation	Larger footprint and no V_ISO - mandates isolated mounting hardware and increases layout complexity	Choose only if higher current rating (32 A) and thermal headroom justify added mechanical and safety overhead

Compared with IPP60R190C7 and IXFH32N60X3, STF24N60DM2 uniquely balances low Q_rr, integrated gate protection, and insulated packaging - making it optimal for space-constrained, high-reliability industrial SMPS where board-level isolation and diode softness are critical.

Availability

STF24N60DM2 is available at Aetrix Electronics and suitable for industrial AC/DC power supplies, telecom rectifiers, and phase-shifted full-bridge converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STF24N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, power, and embedded applications.

This device belongs to the MDmesh DM2 product line - engineered specifically for high-efficiency, high-frequency power conversion systems where low Q_rr, rugged dv/dt performance, and avalanche reliability are mandatory.

FAQ

What is the maximum recommended gate resistor value for STF24N60DM2 in a 200 kHz ZVS converter?

The datasheet specifies intrinsic gate resistance R_g = 7 Ω and recommends limiting gate loop inductance and using ≤10 Ω external gate resistor to maintain dv/dt immunity. At 200 kHz, a 6.8 Ω resistor ensures controlled turn-on/turn-off while preserving 50 V/ns ruggedness and avoiding Miller-induced oscillation in high-side operation.

Can STF24N60DM2 replace STW20NK60Z in an existing PFC design?

No - STW20NK60Z is a SuperFET II device with different R_DS(on) (190 mΩ), Q_rr (1.3 µC), and no Zener gate protection. STF24N60DM2 has lower Q_rr and integrated clamping but requires gate drive redesign due to higher Q_g (29 nC vs 22 nC) and stricter dv/dt layout rules.

Is the TO-220FP package of STF24N60DM2 compatible with standard TO-220 heatsinks?

Yes - the TO-220FP type B outline matches standard TO-220 mechanical dimensions (L3 = 28.6–30.6 mm, L4 = 9.8–10.6 mm), and the insulated tab allows direct mounting to grounded heatsinks without mica washers. Thermal resistance remains 4.2 °C/W junction-to-case under proper mounting torque (0.5–0.7 N·m).

Does STF24N60DM2 support paralleling for higher current applications?

Yes - its positive temperature coefficient for R_DS(on) (1.9× increase from –50 °C to 150 °C per Figure 10) enables stable current sharing. However, matched gate drive impedance (<±0.5 Ω), symmetrical PCB layout, and individual source resistors (0.1 Ω) are required to balance dynamic current distribution during switching transitions.

STF24N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II Plus

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1055 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

STF24N60DM2 FAQ

1.How can I place an order for STF24N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF24N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF24N60DM2 reliable?

The price and inventory of STF24N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF24N60DM2 is usually 5 days.

3.What payment methods are accepted for STF24N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF24N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF24N60DM2?

STF24N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF24N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF24N60DM2?

For technical support, including STF24N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF24N60DM2 requirements.

6.How does Aetrix verify that STF24N60DM2 is sourced from the original manufacturer or authorized distributors?

All STF24N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF24N60DM2 meets industry standards.

7.What is the process for return or replacement of STF24N60DM2?

All STF24N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STF24N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF24N60DM2 part is unused and in its original packaging.

Return procedure for STF24N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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