STMicroelectronics STF24N60M6

Overview

STF24N60M6 from STMicroelectronics is an N-channel 600 V, 17 A MDmesh™ M6 Power MOSFET in TO-220FP package, featuring 162 mΩ typ. R_DS(on), 100% avalanche tested, and Zener-protected gate. It delivers low switching losses and high dv/dt ruggedness (50 V/ns) for high-efficiency LLC and boost PFC converters.

For engineers reviewing the STF24N60M6 datasheet, STF24N60M6 pinout, STF24N60M6 application, or STF24N60M6 equivalent, key selection criteria include its 4.2 °C/W junction-to-case thermal resistance, 23 nC total gate charge, 150 °C max operating junction temperature, and 2500 V isolation rating - all critical for reliable high-voltage power stage design.

Technical Context

This MOSFET employs ST's MDmesh™ M6 superjunction technology, optimized for high-voltage switching with reduced R_DS(on) per die area and enhanced dynamic performance. Its 960 pF input capacitance and 4.5 pF reverse transfer capacitance support fast, controlled turn-on/turn-off under hard-switching conditions.

The device integrates a robust body diode with 225 ns reverse recovery time (T_j = 25 °C) and 2.3 µC Q_rr, enabling efficient operation in resonant topologies. Gate threshold voltage is tightly specified at 3.25–4.75 V, ensuring stable drive compatibility with standard 10 V gate drivers.

Key Specifications

Pinout & Package

TO-220FP package: insulated tab, single in-line vertical lead frame, 3-pin through-hole mount with internal heatsink isolation. Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R190C7 and IXTH17N60L2, STF24N60M6 uniquely combines Zener gate protection, 50 V/ns dv/dt ruggedness, and TO-220FP insulation in a compact form - making it optimal for space-constrained, high-reliability PFC and LLC designs where gate integrity and layout simplicity are prioritized.

Availability

STF24N60M6 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, and photovoltaic DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for STF24N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, power, and microcontroller solutions with over 45 years of analog and power device innovation.

This device belongs to the MDmesh™ M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-voltage AC-DC and DC-DC conversion in datacenter, industrial, and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF24N60M6 supports 10.7 A continuous drain current at T_case = 100 °C, as specified in Table 1 of DS12731. This derating reflects thermal limits imposed by its 4.2 °C/W R_thj-case and 150 °C maximum junction temperature, ensuring safe operation under sustained high-power conditions.

Does this MOSFET require a gate resistor for stability?

Yes - a gate resistor (typically 4.7 Ω, per datasheet Figure 13 test circuit) is recommended to dampen ringing caused by gate loop inductance and intrinsic 5 Ω gate resistance. Without it, fast edge rates combined with PCB trace inductance may induce oscillation or false triggering during switching transitions.

Can STF24N60M6 replace STF24N60M5 in existing designs?

Yes - STF24N60M6 is a direct drop-in replacement for STF24N60M5, sharing identical TO-220FP package, pinout, and voltage/current ratings. It improves R_DS(on) by ~15% (162 mΩ vs 190 mΩ typ.) and enhances switching behavior, allowing immediate efficiency gains without layout changes.

Is the TO-220FP package internally insulated?

Yes - the TO-220FP package features an electrically isolated metal tab, rated for 2500 V RMS insulation between all three leads and the external heatsink. This eliminates the need for insulating pads or sleeves in most high-voltage mounting configurations, simplifying thermal design and improving reliability.