STMicroelectronics STF24N65M2

Overview

STF24N65M2 from STMicroelectronics is an N-channel 650 V, 185 mΩ typ. (230 mΩ max.), 16 A MDmesh™ M2 Power MOSFET in TO-220FP package, featuring 29 nC total gate charge, 47.5 pF output capacitance, and 100% avalanche tested ruggedness. It serves as a high-voltage switching device in offline SMPS, PFC stages, and industrial motor drives requiring low conduction loss and fast, controlled turn-off.

For engineers reviewing the STF24N65M2 datasheet, STF24N65M2 pinout, STF24N65M2 application, or STF24N65M2 equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, 2.5 kV insulation withstand voltage (TO-220FP), 4.2 °C/W junction-to-case thermal resistance, and Zener-protected gate structure - all critical for reliable high-voltage hard-switching designs.

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and optimized vertical structure to minimize R_DS(on) while maintaining low C_oss (47.5 pF) and C_rss (1.65 pF), enabling high-efficiency operation in continuous conduction mode (CCM) PFC and resonant LLC topologies. Its 100% unclamped inductive switching (UIS) tested to 2.2 A and 650 mJ single-pulse avalanche energy ensures robustness under transient overloads.

The device integrates a fast-recovery body diode with t_rr = 350 ns (T_J = 25 °C) and Q_rr = 4.5 µC, supporting ZVS-capable designs. Gate threshold voltage (2–4 V) and ±25 V V_GS rating allow direct drive from standard 12 V gate drivers without level-shifting, while intrinsic gate resistance of 7 Ω aids EMI control during switching transitions.

Key Specifications

Pinout & Package

STF24N65M2 is housed in a TO-220FP (Full-Pak) package with insulated tab, enabling direct mounting to heatsinks without isolation hardware. The plastic body isolates the drain-connected tab from the mounting surface, simplifying mechanical integration in high-voltage systems.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STB24N65M2, STF24N65M2 trades 3.6× higher R_thJC for simplified mechanical mounting; versus IPW65R041CFD7, it offers lower gate drive complexity and proven avalanche ruggedness at the cost of 2.2× higher conduction loss - making it optimal for cost-sensitive, thermally relaxed 1–3 kW industrial SMPS.

Availability

STF24N65M2 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifier modules, and EV on-board charger PFC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for STF24N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STF24N65M2 belongs to the MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and telecom infrastructure applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF24N65M2 supports 10 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10381 Rev 3. This derating reflects thermal limits of the TO-220FP package and must be applied in thermal design calculations when ambient temperature exceeds 50 °C or heatsink performance is constrained.

Does STF24N65M2 require external gate protection?

No - STF24N65M2 integrates a Zener diode between gate and source, rated for ±25 V, providing built-in protection against gate oxide damage from ESD or driver overshoot. External gate resistors (e.g., 10–47 Ω) are still recommended for EMI control and ringing suppression, but discrete Zener clamps are unnecessary.

How does its body diode performance compare to standard silicon MOSFETs?

With t_rr = 350 ns and Q_rr = 4.5 µC at T_J = 25 °C, STF24N65M2's body diode exhibits significantly faster recovery and lower stored charge than conventional 650 V planar MOSFETs (typically t_rr > 1 µs, Q_rr > 15 µC), reducing switching loss and voltage spikes in hard-commutated topologies.

Can STF24N65M2 be used in place of STP24N65M2?

No - STP24N65M2 was discontinued per DS10381 Rev 3 (August 2025). STF24N65M2 shares identical electrical specs but uses TO-220FP instead of TO-220, offering insulated-tab mounting. Mechanical redesign is required for heatsink interface, but no circuit requalification is needed for electrical performance.