STMicroelectronics STF24NM60N

Overview

STF24NM60N from STMicroelectronics is an N-channel 600 V, 17 A Power MOSFET using MDmesh™ II technology in TO-220FP package, featuring 168 mΩ typical R_DS(on), 44 nC total gate charge, and 100% avalanche tested performance. It serves as a primary switching device in high-efficiency AC-DC adapters, PFC stages, and industrial SMPS where low conduction loss and fast switching are critical.

For engineers reviewing the STF24NM60N datasheet, STF24NM60N pinout, STF24NM60N application, or STF24NM60N equivalent, key selection criteria include its 600 V V_DS, 168 mΩ R_DS(on) at V_GS = 10 V, 44 nC Q_g, 1330 pF C_iss, and TO-220FP thermal resistance of 4.17 °C/W (R_thJC).

Technical Context

This MOSFET employs ST's second-generation MDmesh vertical strip architecture to minimize both on-resistance and gate charge simultaneously-enabling high-voltage operation without sacrificing switching speed. Its optimized capacitance profile (C_iss = 1330 pF, C_oss = 80 pF, C_rss = 3.2 pF) supports ZVS-capable topologies and reduces EMI generation in hard-switched converters.

The integrated body diode delivers 340 ns reverse recovery time (T_J = 25 °C) and 4.6 µC Q_rr, enabling reliable operation in flyback and resonant LLC circuits. Its 100% unclamped inductive switching (UIS) rating of 300 mJ ensures robustness against transient overloads in real-world power systems.

Key Specifications

Pinout & Package

STF24NM60N is housed in a TO-220FP (Full-Pak) package with insulated tab, offering creepage/clearance compliance for reinforced isolation in offline power supplies. The plastic body isolates the drain-connected tab from external heat sinks, eliminating need for insulating pads while maintaining 2.5 kV RMS insulation rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP24NM60N and STI24NM60N, STF24NM60N uniquely combines certified 2.5 kV insulation, industry-standard TO-220FP footprint, and balanced thermal-electrical performance-making it optimal for safety-certified offline power supplies requiring manual or semi-automated assembly.

Availability

STF24NM60N is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, LED drivers, and telecom DC-DC converters requiring stable component supply, long-term lifecycle assurance, and certified isolation compliance.

Supply support for STF24NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching power supplies operating above 300 W.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF24NM60N supports 11 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6979 Rev 5. This derating reflects junction-to-case thermal resistance (4.17 °C/W) and maximum allowable T_J of 150 °C, ensuring safe operation under sustained high-temperature conditions in enclosed enclosures.

Does STF24NM60N require a gate resistor for stability?

Yes-a 4.7 Ω gate resistor is used in the official switching time test circuit (Figure 15), and the device's 5 Ω intrinsic gate resistance necessitates external damping to suppress oscillation. For 100–300 kHz operation, a 5–10 Ω non-inductive SMD resistor placed adjacent to the gate pin is recommended to control dV/dt and minimize EMI.

Can STF24NM60N replace STP24NM60N without layout changes?

No-STF24NM60N uses TO-220FP (insulated tab), while STP24NM60N uses TO-220 (conductive tab). Mounting holes, creepage distances, and heatsink isolation requirements differ. Direct replacement requires verification of clearance/creepage per IEC 62368-1 and revision of mechanical mounting design.

What is the typical reverse recovery charge of the body diode?

The typical reverse recovery charge (Q_rr) is 4.6 µC at T_J = 25 °C, measured with I_SD = 17 A, di/dt = 100 A/µs, and V_DD = 60 V (Table 7). At elevated temperature (T_J = 150 °C), Q_rr increases to 5.7 µC, directly impacting turn-off loss in hard-switched topologies.