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STMicroelectronics STF24NM65N
- Part No.:
- STF24NM65N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STF24NM65N.pdf
- Description:
- MOSFET N-CH 650V 19A TO220FP
- Quantity:
- Payment:
- Shipping:
Inventory:9,664
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Product details
Overview
STF24NM65N from STMicroelectronics is a second-generation MDmesh™ N-channel power MOSFET rated for 650 V drain-source voltage, 0.16 Ω typical RDS(on) at VGS = 10 V, and 19 A continuous drain current at TC = 25 °C in TO-220FP package. It delivers low gate charge (70 nC) and high avalanche ruggedness (500 mJ EAS) for use in high-efficiency AC-DC adapters and industrial SMPS.
For engineers reviewing the STF24NM65N datasheet, STF24NM65N pinout, STF24NM65N application, or STF24NM65N equivalent, this device is selected for high-voltage switching where low conduction loss, fast switching (tr = 10 ns), and robust diode recovery (trr = 460 ns @ 25 °C) are critical in flyback and PFC stages.
Technical Context
This MOSFET employs ST's proprietary strip-based vertical MDmesh™ structure to minimize both on-resistance and gate charge simultaneously. Its 650 V rating targets universal-input offline converters, while its 0.78 °C/W junction-to-case thermal resistance enables reliable operation at full current with moderate heatsinking.
The device integrates an intrinsic body diode with 1.3 V forward voltage at 19 A and exhibits controlled reverse recovery (Qrr = 7 µC, IRRM = 30 A) under 100 V/100 A/µs conditions-key for minimizing switching losses and EMI in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 650 V - supports universal AC input (85–265 VAC) with ≥20% safety margin in 400 V DC bus applications |
| RDS(on) max | 0.19 Ω - ensures ≤6.9 W conduction loss at 19 A, enabling compact thermal design in TO-220FP |
| Qg | 70 nC - reduces gate drive power and allows use of low-cost bipolar or CMOS drivers in 65–100 kHz designs |
| EAS | 500 mJ - withstands unclamped inductive switching events without failure, eliminating need for external snubbers |
| trr | 460 ns - limits diode reverse recovery current overshoot, reducing voltage spikes and stress on clamp components |
| Rthj-case | 0.78 °C/W - permits 19 A continuous operation with ≤117 °C junction rise over case at 160 W dissipation limit |
Pinout & Package
STF24NM65N uses the TO-220FP (Full-Pak) package: insulated plastic case with internal isolation between drain tab and mounting surface, enabling direct heatsink attachment without insulator washers. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | High-impedance control terminal requiring ≤70 nC charge for full enhancement; sensitive to ESD (±25 V rating) |
| Pin 2 (D) | Drain | Main high-voltage power terminal; electrically connected to metal tab for low-inductance heat path and high-current routing |
| Pin 3 (S) | Source | Power return and reference node for gate drive; forms common node with body diode cathode in synchronous rectification |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees single-pulse ruggedness up to 500 mJ, enabling reliable operation in non-clamped inductive loads |
| Low Ciss/Coss | 2500 pF / 120 pF - minimizes capacitive turn-on loss and improves light-load efficiency in quasi-resonant converters |
| Low gate input resistance | 2.5 Ω - suppresses gate oscillation during fast switching, reducing need for external gate resistors in <100 kHz designs |
| ECOPACK® compliant | Lead-free second-level interconnect and RoHS-compliant packaging meet industrial environmental requirements |
Applications
| Server PSU Primary Switch | Industrial UPS Inverter Stage |
|---|---|
|
Use Scenario: High-density 1 kW server power supply operating at 100 kHz in continuous conduction mode flyback topology. IC Role / Device Role / Timing Role: Main switch handling 400 V DC bus, modulated by UC3844 controller with 50 ns dead time. Use Value: 0.16 Ω RDS(on) cuts conduction loss by 32% vs. legacy 0.24 Ω devices, enabling 92% efficiency at full load without forced air. |
Use Scenario: 3 kVA online UPS inverter stage converting 400 V DC to 230 V AC with sinusoidal PWM. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration, driven by IR2110 with bootstrap gate supply. Use Value: 460 ns trr and 7 µC Qrr reduce shoot-through risk and EMI filter size by 40% compared to standard 650 V MOSFETs. |
| EV Charger PFC Boost | LED Streetlight Driver |
|
Use Scenario: Two-phase interleaved boost PFC front-end for 3.3 kW EV charging station with 99% target efficiency. IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 65 kHz with UCC28070 controller and current-mode control. Use Value: 70 nC Qg lowers gate driver power consumption by 55%, allowing integrated driver IC instead of discrete bipolar pair. |
Use Scenario: Outdoor-rated 150 W constant-current LED driver for street lighting with wide ambient temperature range (−40 to +85 °C). IC Role / Device Role / Timing Role: Primary-side switch in isolated flyback with primary-side regulation (PSR) using INN3276C. Use Value: 150 °C max junction temperature and 0.78 °C/W Rthj-case enable derating-free operation at 70 °C ambient with passive heatsink only. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP24NM65N | Same die, TO-220 (non-isolated tab); Rthj-case = 0.78 °C/W but requires insulating washer | Suitable for cost-sensitive designs where mechanical isolation is handled externally | Select when board layout allows insulated mounting and lower assembly cost is prioritized over ease of heatsink integration |
| IPP65R190C7 | Infineon CoolMOS™ C7; 0.19 Ω RDS(on), 55 nC Qg, but 650 V rating with tighter V(BR)DSS distribution (min 650 V) | Better light-load efficiency due to lower Coss, but less rugged in unclamped inductive switching | Prefer for ZVS/ZCS resonant topologies; avoid in hard-switched PFC where EAS margin is critical |
Compared with STP24NM65N and IPP65R190C7, STF24NM65N uniquely combines full internal insulation, industry-leading avalanche energy, and proven field reliability in high-stress industrial SMPS-making it optimal for designs demanding zero-failure tolerance in mains-connected equipment.
Availability
STF24NM65N is available at Aetrix Electronics and suitable for server PSUs, industrial UPS systems, EV charger PFC stages, and outdoor LED drivers requiring stable component supply across multi-year production cycles.
Supply support for STF24NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.
This device belongs to ST's MDmesh™ high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and infrastructure applications.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STF24NM65N supports 12 A continuous drain current at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-220FP package and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load.
Does the TO-220FP package provide electrical isolation between the drain tab and mounting surface?
Yes-the TO-220FP (Full-Pak) variant features an electrically insulated metal tab. The drain is isolated from the heatsink-mounting surface by molded plastic, eliminating the need for insulating pads or shoulder washers in most applications.
How does the body diode performance compare to standard silicon diodes in the same package?
The integrated body diode has a forward voltage of 1.3 V at 19 A and reverse recovery time of 460 ns at 25 °C. While slower than dedicated SiC Schottky diodes, its parameters are optimized for synchronous rectification and PFC applications where soft recovery reduces voltage overshoot versus ultrafast silicon diodes.
Is STF24NM65N suitable for use in automotive applications?
No-STF24NM65N is not qualified to AEC-Q101 and lacks automotive-grade screening, temperature cycling validation, or guaranteed parametric stability over automotive temperature ranges. ST recommends dedicated automotive-grade MDmesh™ variants such as STL24N65M5 for vehicle applications.
STF24NM65N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 190mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2500 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STF24NM65N FAQ
1.How can I place an order for STF24NM65N through Aetrix?
Please submit a Request for Quotation (RFQ) for STF24NM65N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STF24NM65N reliable?
The price and inventory of STF24NM65N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF24NM65N is usually 5 days.
3.What payment methods are accepted for STF24NM65N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF24NM65N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STF24NM65N?
STF24NM65N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STF24NM65N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STF24NM65N?
For technical support, including STF24NM65N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF24NM65N requirements.
6.How does Aetrix verify that STF24NM65N is sourced from the original manufacturer or authorized distributors?
All STF24NM65N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF24NM65N meets industry standards.
7.What is the process for return or replacement of STF24NM65N?
All STF24NM65N units undergo pre-shipment inspection (PSI). If there is an issue with STF24NM65N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STF24NM65N part is unused and in its original packaging.
Return procedure for STF24NM65N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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