STMicroelectronics STF25N60M2-EP

Overview

STF25N60M2-EP from STMicroelectronics is an N-channel 600 V, 18 A Power MOSFET in TO-220FP package, featuring 0.175 Ω typ. R_DS(on), 29 nC total gate charge, and 15 V/ns diode recovery dv/dt ruggedness. It is engineered for very high-frequency switching converters (>150 kHz) with Zener-protected gate and 100% avalanche tested reliability.

For engineers reviewing the STF25N60M2-EP datasheet, STF25N60M2-EP pinout, STF25N60M2-EP application, or STF25N60M2-EP equivalent, key selection criteria include its low C_oss (56 pF), fast turn-off energy (7–8 µJ), 4.2 °C/W junction-to-case thermal resistance, and suitability for hard-switched PFC and resonant LLC topologies.

Technical Context

This MDmesh™ M2 EP device uses a strip layout and enhanced vertical structure to achieve low conduction loss and minimized turn-off switching losses. Its optimized COSS profile (56 pF typ.) and low Qgd (12 nC) support clean voltage transitions under high dv/dt conditions up to 50 V/ns.

The integrated Zener-protected gate ensures robust ESD immunity, while 100% unclamped inductive avalanche testing (EAS = 200 mJ) validates ruggedness in overvoltage transients. The TO-220FP package provides insulated mounting (2500 V RMS isolation) and 30 W power dissipation at TC = 25 °C.

Key Specifications

Pinout & Package

TO-220FP package: insulated tab (no electrical connection to drain), 3-pin through-hole outline with heat sink mounting capability and 2500 V RMS isolation between leads and external heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power switching applications.

Compared with STF20N60M2, STF25N60M2-EP delivers +12.5% current headroom and −7% R_DS(on) at identical gate drive strength; versus IPP60R099C7, it trades 12% lower conduction loss for 31% lower switching loss and 47% lower Q_g, making it superior for >150 kHz operation.

Availability

STF25N60M2-EP is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, LED streetlight drivers, and EV onboard charger AC/DC stages requiring stable component supply and long-term lifecycle support.

Supply support for STF25N60M2-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh™ M2 EP high-voltage Power MOSFET product line, developed specifically for ultra-high-frequency switching power conversion in space- and thermally-constrained applications such as PFC, LLC resonant converters, and motor inverters.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF25N60M2-EP supports 11.3 A continuous drain current at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-220FP package and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load conditions.

Does this MOSFET include an integrated body diode, and what are its recovery characteristics?

Yes, it features an integrated source-drain diode rated for 18 A continuous and 72 A pulsed current. At TJ = 25 °C, trr is 360 ns with Qrr = 5 µC and IRRM = 28 A under ISD = 18 A, di/dt = 100 A/µs, and VDD = 100 V conditions-key parameters for minimizing commutation loss in hard-switched topologies.

Is the TO-220FP package electrically insulated, and what is its isolation rating?

Yes, the TO-220FP package provides reinforced electrical insulation between all three leads and the external heatsink. Its insulation withstand voltage is rated at 2500 V RMS for 1 second at TC = 25 °C, enabling direct mounting to grounded heatsinks without additional insulating hardware in most industrial and lighting applications.

How does the MDmesh™ M2 EP technology improve performance over standard planar MOSFETs?

MDmesh™ M2 EP uses a refined strip layout and optimized vertical charge balance to reduce both R_DS(on) and gate charge simultaneously. Compared to standard 600 V planar MOSFETs, it achieves up to 35% lower R_DS(on) × Q_g figure-of-merit, resulting in significantly reduced conduction and switching losses-especially critical in high-frequency, high-efficiency power converters.