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STMicroelectronics STF25N80K5

Name: STF25N80K5
Brand: STMicroelectronics
SKU: STF25N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF25N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF25N80K5.pdf

Description:: MOSFET N-CH 800V 19.5A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF25N80K5 from STMicroelectronics is an N-channel 800 V, 19.5 A high-voltage Power MOSFET using MDmesh K5 technology in TO-220FP package. It delivers 190 mΩ typical R_DS(on), 40 nC total gate charge, and 100% avalanche-tested ruggedness for offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STF25N80K5 datasheet, STF25N80K5 pinout, STF25N80K5 application, or STF25N80K5 equivalent, this device supports high-efficiency 600–800 V switching with Zener-protected gate, ultra-low FoM, and validated unclamped inductive load capability up to 200 mJ.

Technical Context

This MOSFET employs ST's proprietary MDmesh K5 vertical structure to reduce specific on-resistance and gate charge simultaneously. Its 800 V V_(BR)DSS and 6.5 A repetitive avalanche current enable robust operation in hard-switched converters with high dv/dt stress (6 V/ns).

The device integrates a fast-recovery body diode (t_rr = 515 ns at 25 °C) and features low output capacitance energy (E_oss = 185 µJ at 640 V), supporting high-frequency ZVS and resonant topologies while maintaining SOA integrity up to 10 ms at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	800 V - Withstands full-line surges in 400 VAC rectified systems without breakdown.
R_DS(on) max	260 mΩ - Ensures ≤2.5 W conduction loss at 10 A, enabling compact heatsink design.
Q_g	40 nC - Reduces gate drive power and enables use with low-current drivers (e.g., 1 A peak).
I_D (cont.)	19.5 A at T_C = 25 °C - Supports continuous 300–500 W power stages in forced-air-cooled designs.
E_AS	200 mJ - Guarantees single-pulse ruggedness under unclamped inductive switching (e.g., relay/snubberless flyback).
t_rr	515 ns - Minimizes commutation losses and EMI in bridge-leg transitions with controlled di/dt.
R_thJC	3.1 °C/W - Enables direct thermal coupling to heatsink for stable junction temperature below 150 °C at 12.3 A.

Pinout & Package

STF25N80K5 is housed in a TO-220FP (Full-Pak) package with insulated tab, eliminating need for mounting insulator in most applications. The plastic body provides creepage/clearance compliance for reinforced insulation in AC/DC front-ends.

Pin/Terminal	Circuit Role	Design Meaning
D (Pin 2, Tab)	Drain	High-voltage power node; electrically connected to metal tab for low-inductance heat path and direct heatsink attachment.
G (Pin 1)	Gate	Control input; ±30 V rating allows standard 12–15 V gate drivers; Zener protection prevents ESD-induced failure.
S (Pin 3)	Source	Power return and reference for gate drive; low-inductance connection critical for minimizing ringing in high-dv/dt switching.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 40 nC - Cuts gate driver power loss by >40% vs. legacy 800 V MOSFETs, easing thermal design of isolated gate supplies.
Very low FoM (R_DS(on) × Q_g)	10.4 Ω·nC - Delivers best-in-class power density for space-constrained 1U server PSUs and DIN-rail power supplies.
Zener-protected gate	Integrated ±30 V clamp - Eliminates external gate protection components and improves system-level ESD immunity (IEC 61000-4-2 Level 4).
100% avalanche tested	Single-pulse E_AS = 200 mJ - Validates ruggedness for no-snubber designs in LLC resonant converters and active clamp forward topologies.
Fast body diode	t_rr = 515 ns, Q_rr = 11 µC - Reduces reverse recovery loss and voltage overshoot during synchronous rectification or half-bridge freewheeling.

Applications

Industrial Motor Drives

Server & Telecom SMPS

Use Scenario: Three-phase IGBT/MOSFET inverter stage for 0.75–2.2 kW HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side switching element in 600–800 V DC bus, operating at 16–20 kHz with hard commutation.

Use Value: Low R_DS(on) and avalanche rating ensure reliable start-up torque delivery under overload, while low Q_g reduces gate driver thermal load.

Use Scenario: Primary-side switch in 800 V bulk-capacitor PFC boost converter for 3 kW telecom rectifiers.

IC Role / Device Role / Timing Role: Fast-switching power switch handling 19.5 A peak current with 640 V blocking, synchronized to 65–100 kHz control loop.

Use Value: Ultra-low FoM minimizes conduction + switching loss trade-off, achieving >98.5% efficiency at full load without complex gate drive tuning.

Industrial UPS Systems

EV Charging Front-End

Use Scenario: Bidirectional DC-link switch in online double-conversion UPS with 690 VAC input.

IC Role / Device Role / Timing Role: High-voltage isolation switch managing battery backup path and grid synchronization during transfer events.

Use Value: 2.5 kV isolation rating (Viso) and 150 °C T_J operation support long-life reliability in 24/7 mission-critical environments.

Use Scenario: Input rectifier and PFC switch in 11 kW AC-to-DC OBC (on-board charger) for BEVs.

IC Role / Device Role / Timing Role: 800 V-rated switch handling 19.5 A RMS in continuous conduction mode (CCM) PFC with THD < 5%.

Use Value: Tight R_DS(on) distribution (190 mΩ typ., 260 mΩ max) ensures predictable thermal rise across production batches, simplifying derating rules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP25N80K5	Same die, TO-220 package with non-insulated tab; R_thJC = 0.5 °C/W (vs. 3.1 °C/W); higher thermal performance but requires insulator.	Better suited for heatsink-mounted designs where isolation is handled externally; not suitable for chassis-grounded mounting without insulator.	Select when maximum thermal efficiency is prioritized and mechanical layout permits insulator use.
IPW65R095C7	650 V SiC MOSFET; lower Q_g (34 nC), lower R_DS(on) (95 mΩ), but lower V_(BR)DSS; requires gate driver with negative turn-off.	Enables >200 kHz operation in PFC; unsuitable for 800 V surge-prone mains inputs without additional clamping.	Select only if system voltage is strictly limited to ≤650 V and high-frequency efficiency gain justifies SiC cost and driver complexity.

Compared with STP25N80K5, STF25N80K5 trades thermal resistance for electrical isolation and ease of mounting; compared with IPW65R095C7, it offers higher voltage margin and simpler gate drive at the cost of switching speed and conduction loss.

Availability

STF25N80K5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom SMPS, UPS systems, and EV charging front-ends requiring stable component supply and long-term lifecycle assurance.

Supply support for STF25N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STF25N80K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching applications demanding ruggedness, low FoM, and simplified thermal design.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STF25N80K5 supports 12.3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9179 Rev 4. This value reflects thermal derating due to reduced safe operating area at elevated temperatures and must be applied with appropriate heatsinking to maintain T_J ≤ 150 °C.

Does STF25N80K5 require a gate resistor for EMI suppression?

Yes - a 4.7 Ω gate resistor is used in the official switching time test circuit (Figure 16) to limit dv/dt and suppress ringing. While the device's low Q_g allows faster switching, omitting the resistor risks shoot-through in bridge configurations and increases radiated emissions above CISPR 22 Class B limits.

Can STF25N80K5 replace STP25N80K5 without board redesign?

No - STF25N80K5 uses TO-220FP (insulated tab), whereas STP25N80K5 uses TO-220 (non-insulated tab). Pinout is identical (G-D-S), but mechanical footprint, tab isolation, and thermal interface differ. Board redesign is required to accommodate the full-pak body and eliminate the insulator.

Is the body diode suitable for synchronous rectification in LLC resonant converters?

No - although the body diode has fast t_rr (515 ns) and low Q_rr (11 µC), its forward voltage (V_SD = 1.5 V) is too high for efficient synchronous rectification. Dedicated low-V_F Schottky or GaN FETs are recommended for secondary-side rectification in high-frequency LLC designs.

STF25N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH5™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 19.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 260mOhm @ 19.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF25N80K5 FAQ

1.How can I place an order for STF25N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF25N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF25N80K5 reliable?

The price and inventory of STF25N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF25N80K5 is usually 5 days.

3.What payment methods are accepted for STF25N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF25N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF25N80K5?

STF25N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF25N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF25N80K5?

For technical support, including STF25N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF25N80K5 requirements.

6.How does Aetrix verify that STF25N80K5 is sourced from the original manufacturer or authorized distributors?

All STF25N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF25N80K5 meets industry standards.

7.What is the process for return or replacement of STF25N80K5?

All STF25N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STF25N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF25N80K5 part is unused and in its original packaging.

Return procedure for STF25N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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