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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF25NM50N

Name: STF25NM50N
Brand: STMicroelectronics
SKU: STF25NM50N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF25NM50N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF25NM50N.pdf

Description:: MOSFET N-CH 500V 22A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF25NM50N from STMicroelectronics is an N-channel 500 V, 22 A MDmesh™ II Power MOSFET in TO-220FP package, featuring 0.11 Ω max R_DS(on) at V_GS = 10 V, 84 nC total gate charge, and 100% avalanche tested for ruggedness. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial DC-DC converters operating up to 150 °C junction temperature.

For engineers reviewing the STF25NM50N datasheet, STF25NM50N pinout, STF25NM50N application, or STF25NM50N equivalent, this device is evaluated for high-voltage switching where low conduction loss, fast switching (t_d(off) = 75 ns), and robust unclamped inductive switching capability (E_AS = 350 mJ) are critical design requirements.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ vertical structure with strip layout, delivering ultra-low R_DS(on) × Q_g figure-of-merit (0.14 Ω·nC). Its 15 V/ns dv/dt immunity and 44 V/ns measured turn-off slope support stable operation under fast-switching, high-voltage inductive loads.

The device integrates a fast-recovery body diode (t_rr = 460 ns, Q_rr = 6.9 µC at T_j = 25 °C) and exhibits low thermal resistance (R_thj-case = 3.1 °C/W), enabling high-power density designs without forced cooling in TO-220FP form factor.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Withstands full mains-derived DC bus voltages (e.g., 375–400 V DC after bridge rectification) with margin for transient spikes.
R_DS(on) max	0.140 Ω @ V_GS = 10 V, T_j = 100 °C - Enables <1.5 W conduction loss at 22 A continuous drain current in thermally constrained layouts.
Q_g	84 nC - Low gate drive energy requirement reduces driver IC stress and enables use of compact gate resistors (e.g., 4.7 Ω) for controlled switching transitions.
E_AS	350 mJ - Supports reliable unclamped inductive switching in flyback or forward converters without external snubbers under defined test conditions.
t_r/t_f	23 ns / 22 ns - Fast edge rates minimize switching transition time, reducing overlap losses in hard-switched topologies.
R_thj-case	3.1 °C/W - Allows direct mounting to heatsink with minimal thermal interface resistance; supports 40 W dissipation at ΔT = 124 °C.

Pinout & Package

STF25NM50N is housed in TO-220FP (Full-Pak) package: insulated plastic case with internal isolation between drain tab and mounting surface, rated for 2500 V_RMS insulation withstand voltage. The package features three leads in standard 1–2–3 configuration (Drain–Gate–Source), with drain connected to the metal tab for efficient heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1 (Tab/Drain)	High-side power node	Electrically isolated metal tab serves as primary drain connection and thermal path; requires no insulating washer when mounted to heatsink.
2 (Gate)	Control input	Low-impedance gate terminal (R_g = 1.6 Ω) accepts standard 10 V logic-level drive; sensitive to ESD but compatible with common MOSFET drivers.
3 (Source)	Power return reference	Source lead provides low-inductance return path for load current; must be routed with minimal loop area to suppress ringing during fast switching.

Key Features

Feature	Design Value
MDmesh™ II vertical structure	Reduces R_DS(on) × Q_g by >30% vs. first-gen MDmesh, enabling higher efficiency in 65–100 kHz SMPS without increasing gate drive complexity.
100% avalanche rated	Guarantees single-pulse avalanche survival up to I_AR = 10 A and E_AS = 350 mJ - eliminates need for overvoltage clamping in cost-sensitive flyback designs.
Low C_iss/C_oss ratio	C_iss = 2565 pF, C_oss = 511 pF - improves zero-voltage switching (ZVS) feasibility in resonant topologies and reduces Miller-induced shoot-through risk.
Fast body diode recovery	t_rr = 460 ns, Q_rr = 6.9 µC - limits reverse recovery loss and EMI generation in synchronous rectifier or freewheeling applications.

Applications

Industrial AC-DC Power Supplies

Server & Telecom PSU Primary Switch

Use Scenario: 500 W open-frame AC-DC power supply for PLC controllers, operating at 65 kHz with universal input (85–265 V_AC).

IC Role / Device Role / Timing Role: Primary-side switching transistor in discontinuous conduction mode (DCM) flyback topology, handling peak drain voltage up to 450 V.

Use Value: 0.11 Ω R_DS(on) cuts conduction loss by ~22% vs. comparable 0.14 Ω devices, improving full-load efficiency from 87.5% to 88.9% at 230 V_AC.

Use Scenario: 1 kW telecom rectifier with active PFC front-end and LLC resonant secondary stage.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC circuit, switching at 100 kHz with 400 V DC bus.

Use Value: 84 nC Q_g allows gate drive with low-power UCC27531 driver, reducing driver dissipation by 350 mW compared to 120 nC alternatives.

Motor Drive Inverter Stage

LED Streetlight Driver

Use Scenario: 3-phase 750 W inverter for HVAC blower motor, using 6-pack TO-220FP MOSFETs in IGBT-replacement configuration.

IC Role / Device Role / Timing Role: High-side switch in 3-phase bridge, commutating 15 A RMS phase current with 120° trapezoidal excitation.

Use Value: 3.1 °C/W R_thj-case enables heatsink-free operation up to 45 °C ambient, reducing BOM count and system volume by 18%.

Use Scenario: 150 W constant-current LED driver for outdoor street lighting, employing single-stage flyback with integrated PFC.

IC Role / Device Role / Timing Role: Main switch in quasi-resonant (QR) flyback controller, operating in boundary conduction mode (BCM) at variable frequency up to 130 kHz.

Use Value: 15 V/ns dv/dt immunity prevents false triggering during high dV/dt transients on long LED cable runs, eliminating need for gate clamping Zeners.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP25NM50N	Same die, TO-220 (non-isolated tab); R_thj-case = 0.78 °C/W vs. 3.1 °C/W	Requires insulating pad and thermal compound; suited for lower-power designs (<120 W) with ample heatsinking.	Select when thermal budget permits larger heatsink and isolation is managed externally.
FDPF25N50	ON Semiconductor SuperFET II; R_DS(on) = 0.13 Ω, Q_g = 72 nC, no avalanche rating	Lacks guaranteed avalanche ruggedness; requires external RCD clamp in flyback designs.	Prefer for cost-sensitive, non-avalanche-critical applications where gate drive optimization is priority.

Compared with STP25NM50N, STF25NM50N trades 4× higher thermal resistance for built-in isolation and simplified mechanical assembly; versus FDPF25N50, it delivers verified avalanche robustness at slight Q_g penalty, making it preferable for industrial-grade reliability-critical systems.

Availability

STF25NM50N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifiers, and LED streetlight drivers requiring stable component supply across multi-year production cycles.

Supply support for STF25NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline SMPS, PFC, and motor control-prioritizing low R_DS(on) × Q_g and ruggedness over cost-minimized specs.

FAQ

Is STF25NM50N RoHS-compliant and halogen-free?

Yes. STF25NM50N is manufactured in ST's ECOPACK®-compliant TO-220FP package, featuring lead-free second-level interconnect and halogen-free molding compound per JEDEC JESD22-A112. The inner box label confirms compliance status and soldering profile limits.

What is the maximum continuous drain current at 100 °C case temperature?

The absolute maximum continuous drain current is 14 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This limit is thermally derived-not limited by bondwire or package current capacity-and assumes proper heatsinking maintaining T_C ≤ 100 °C.

Can STF25NM50N replace STP25NM50N in existing PCB layouts?

No. Although both share identical pinout (Drain–Gate–Source), STF25NM50N uses TO-220FP with insulated tab, while STP25NM50N uses standard TO-220. Mounting hole pattern and tab isolation requirements differ; mechanical redesign is required to avoid shorting the drain to heatsink.

Does STF25NM50N require negative gate drive for improved dv/dt immunity?

No. The device operates reliably with 0 V to +10 V gate drive. Its 15 V/ns rated dv/dt and 44 V/ns measured turn-off slope are achieved with standard 10 V positive-only drive; negative bias adds no benefit and risks exceeding V_GS = ±25 V absolute maximum rating.

STF25NM50N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 140mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2565 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF25NM50N FAQ

1.How can I place an order for STF25NM50N through Aetrix?

Please submit a Request for Quotation (RFQ) for STF25NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF25NM50N reliable?

The price and inventory of STF25NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF25NM50N is usually 5 days.

3.What payment methods are accepted for STF25NM50N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF25NM50N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF25NM50N?

STF25NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF25NM50N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF25NM50N?

For technical support, including STF25NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF25NM50N requirements.

6.How does Aetrix verify that STF25NM50N is sourced from the original manufacturer or authorized distributors?

All STF25NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF25NM50N meets industry standards.

7.What is the process for return or replacement of STF25NM50N?

All STF25NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STF25NM50N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF25NM50N part is unused and in its original packaging.

Return procedure for STF25NM50N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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