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STMicroelectronics STF25NM60N
- Part No.:
- STF25NM60N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STF25NM60N.pdf
- Description:
- MOSFET N-CH 600V 21A TO220FP
- Quantity:
- Payment:
- Shipping:
Inventory:2,890
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Product details
Overview
STF25NM60N from STMicroelectronics is an N-channel 600 V, 21 A, 0.130 Ω MDmesh™ II Power MOSFET in TO-220FP package, designed for high-efficiency switching converters. It delivers low gate charge (84 nC), low input capacitance (2400 pF), and 100% avalanche tested ruggedness, enabling reliable operation in offline SMPS, PFC stages, and industrial motor drives.
For engineers reviewing the STF25NM60N datasheet, STF25NM60N pinout, STF25NM60N application, or STF25NM60N equivalent, key selection criteria include RDS(on) at 10 V gate drive, unclamped inductive switching capability (EAS = 850 mJ), thermal resistance (Rthj-case = 3.1 °C/W), and TO-220FP mounting compatibility with insulated heatsinks.
Technical Context
This device employs ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 600 V VDSS, 0.130 Ω RDS(on) at VGS = 10 V, and 84 nC total gate charge enable high-frequency operation up to 100 kHz in hard-switched topologies.
The integrated body diode exhibits fast reverse recovery (trr = 427 ns at Tj = 25 °C) and low Qrr (7.2 µC), reducing commutation loss in bridge configurations. Safe operating area (SOA) is defined up to 84 A pulsed drain current with 150 °C maximum junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Withstands full mains rectified voltage in universal-input offline converters without derating. |
| RDS(on) max | 0.160 Ω @ VGS = 10 V - Enables <1.7 W conduction loss at 10.5 A DC, critical for thermal management in enclosed power supplies. |
| ID continuous | 21 A @ TC = 25 °C - Supports >300 W output in TO-220FP-mounted designs with forced-air cooling. |
| Qg | 84 nC - Reduces gate driver power requirement and enables efficient 65–100 kHz PWM control with standard 1-A drivers. |
| EAS | 850 mJ - Guarantees robustness against inductive turn-off transients in relay/motor switching without external snubbers. |
| trr | 427 ns - Limits diode recovery loss during ZVS/ZCS transitions in resonant LLC and phase-shifted full-bridge topologies. |
| Rthj-case | 3.1 °C/W - Allows direct mounting to heatsink with thermal pad; enables 160 W dissipation at ΔT = 50 °C case-to-sink rise. |
Pinout & Package
STF25NM60N uses the TO-220FP (Full-Pak) package: insulated plastic case with internal isolation between drain tab and mounting surface, rated for 2500 VRMS insulation withstand voltage. The package features three leads in linear configuration (1–2–3), with lead 1 as Gate, lead 2 as Drain (tab-connected), and lead 3 as Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Left) | Gate | High-impedance MOSFET control terminal; requires ≤±25 V bias; low 1.6 Ω gate input resistance minimizes EMI susceptibility. |
| 2 (Center) | Drain | High-voltage power terminal connected to metal tab; electrically isolated from heatsink by molded plastic barrier per IEC 60950. |
| 3 (Right) | Source | Power return path and reference for gate drive; forms common node with gate driver ground in non-isolated buck/boost topologies. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II technology | Combines ultra-low RDS(on) × Qg figure-of-merit (21.3 Ω·nC) for optimal trade-off between conduction and switching loss. |
| 100% avalanche rated | Guaranteed single-pulse energy handling of 850 mJ without parameter shift-eliminates need for overvoltage clamping in cost-sensitive designs. |
| Low Ciss/Coss ratio | 2400 pF / 200 pF = 12:1 - Improves voltage-dependent capacitance linearity, enhancing ZVS initiation predictability in resonant converters. |
| Fast body diode | trr = 427 ns with soft recovery waveform - Reduces EMI generation and diode-induced shoot-through risk in synchronous rectification. |
| ECOPACK® compliant | Lead-free second-level interconnect and RoHS-compliant packaging - Meets global environmental regulations without performance compromise. |
Applications
| Industrial Motor Drives | Server PSU Primary Switch |
|---|---|
|
Use Scenario: Half-bridge inverter stage for 0.5–2 kW brushless DC motor control in HVAC blowers and pumps. IC Role / Device Role / Timing Role: High-side and low-side switching element in 20–50 kHz PWM-driven inverter; handles 21 A peak phase current with 600 V bus. Use Value: Low RDS(on) reduces I²R loss by 35% vs. legacy 600 V MOSFETs, enabling passive cooling in compact enclosures. |
Use Scenario: Primary-side switch in 80 PLUS Platinum-certified 1.5 kW server power supply using LLC resonant topology. IC Role / Device Role / Timing Role: Main switching transistor in asymmetric half-bridge; operates at 250–500 kHz with zero-voltage switching. Use Value: Low Qg and Coss reduce gate drive loss and improve ZVS margin across 90–264 VAC input range. |
| Telecom Rectifier Modules | Induction Heating Inverters |
|
Use Scenario: Active clamp forward or phase-shifted full-bridge in 48 V telecom rectifier delivering 2.5 kW output. IC Role / Device Role / Timing Role: Primary switch subjected to repetitive unclamped inductive switching; must sustain 84 A pulsed ID. Use Value: 100% avalanche testing ensures field reliability under load dump and short-circuit fault conditions. |
Use Scenario: Full-bridge inverter in 10–20 kHz induction heating system for metal forging and brazing. IC Role / Device Role / Timing Role: Hard-switched power switch handling 21 A RMS current with high di/dt (>400 A/µs) during resonant current reversal. Use Value: Fast, soft-recovery body diode minimizes reverse recovery loss and prevents destructive voltage overshoot on turn-on. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP25NM60N | Same die, TO-220 (non-insulated) package; Rthj-case = 0.78 °C/W but requires isolated mounting hardware. | Better thermal performance in open-frame designs where mechanical isolation is managed externally. | Select when heatsink isolation is handled via mica pads or ceramic washers and lower thermal resistance is prioritized. |
| IPP60R099C6 | Infineon CoolMOS™ C6; 600 V, 0.099 Ω, 24 A, Qg = 63 nC - lower RDS(on) but higher price and different gate threshold (2.5–3.5 V). | Superior efficiency in high-duty-cycle PFC; less suitable for avalanche-prone inductive loads due to lower EAS. | Prefer for ultra-high-efficiency PFC where gate drive simplicity and low conduction loss outweigh ruggedness needs. |
Compared with STP25NM60N, STF25NM60N trades 2.5× higher thermal resistance for built-in isolation and simplified assembly; versus IPP60R099C6, it offers superior avalanche immunity and body diode softness at the expense of slightly higher conduction loss and gate charge.
Availability
STF25NM60N is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifier modules, server PSUs, and induction heating inverters requiring stable component supply and long-term manufacturing continuity.
Supply support for STF25NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete devices for automotive, industrial, and power applications.
The MDmesh™ II series was developed specifically for high-efficiency, high-voltage switching in offline AC-DC conversion and industrial motor control, emphasizing ruggedness, low loss, and manufacturability in mainstream packages.
FAQ
What is the maximum continuous drain current for STF25NM60N at 100 °C case temperature?
The maximum continuous drain current is 13 A at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the TO-220FP package, where junction-to-case thermal resistance (3.1 °C/W) and safe operating area constrain sustained current under elevated ambient conditions.
Does STF25NM60N require a negative gate voltage for reliable turn-off in high-noise environments?
No - STF25NM60N has a gate threshold voltage (VGS(th)) of 2–4 V and is fully enhanced at VGS = 10 V. While −5 V to −10 V gate drive improves noise immunity, the device remains reliably off with 0 V gate bias due to its low gate leakage (<100 nA) and absence of parasitic turn-on mechanisms in MDmesh™ II structure.
Can STF25NM60N be used in synchronous rectification configurations?
No - STF25NM60N is optimized as a primary-side switch, not a synchronous rectifier. Its body diode has fast trr (427 ns) but lacks the low forward voltage (VSD = 1.3 V) and bidirectional conduction optimization required for secondary-side synchronous rectification in LLC or flyback topologies.
Is the TO-220FP package of STF25NM60N compatible with standard TO-220 heatsinks?
Yes - the TO-220FP footprint matches standard TO-220 mechanical dimensions (per Figure 11 and Table 4), allowing use of existing heatsink clips and mounting hardware. However, the insulated tab eliminates need for insulating pads, simplifying thermal interface design while maintaining 2500 VRMS isolation.
STF25NM60N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 84 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2400 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STF25NM60N FAQ
1.How can I place an order for STF25NM60N through Aetrix?
Please submit a Request for Quotation (RFQ) for STF25NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STF25NM60N reliable?
The price and inventory of STF25NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF25NM60N is usually 5 days.
3.What payment methods are accepted for STF25NM60N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF25NM60N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STF25NM60N?
STF25NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STF25NM60N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STF25NM60N?
For technical support, including STF25NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF25NM60N requirements.
6.How does Aetrix verify that STF25NM60N is sourced from the original manufacturer or authorized distributors?
All STF25NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF25NM60N meets industry standards.
7.What is the process for return or replacement of STF25NM60N?
All STF25NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STF25NM60N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STF25NM60N part is unused and in its original packaging.
Return procedure for STF25NM60N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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