STMicroelectronics STF25NM60ND

Overview

STF25NM60ND from STMicroelectronics is a 600 V, 25 A N-channel SuperMESH™ III power MOSFET in TO-220FP package, featuring 0.22 Ω R_DS(on) at V_GS = 10 V, 45 nC total gate charge, and 100% avalanche-rated ruggedness. It serves as a high-voltage switching device in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STF25NM60ND datasheet, STF25NM60ND pinout, STF25NM60ND application, or STF25NM60ND equivalent, key selection criteria include breakdown voltage margin, conduction loss at 25 A DC, gate drive compatibility with standard 10–15 V controllers, and thermal performance in forced-air-cooled 2-layer PCB layouts.

Technical Context

This MOSFET employs ST's SuperMESH™ III process to achieve optimized trade-offs between R_DS(on), Q_g, and E_oss, enabling high-efficiency hard-switched topologies up to 100 kHz. Its 600 V V_DSS rating supports universal AC input (85–265 VAC) with ≥20% derating margin.

The device features an integrated fast-recovery body diode (t_rr = 110 ns, Q_rr = 1.1 µC), low Crss/Ciss ratio (0.07), and enhanced dv/dt immunity (≥4.5 V/ns), making it suitable for continuous conduction mode (CCM) PFC and resonant LLC secondary-side synchronous rectification.

Key Specifications

Pinout & Package

TO-220FP (Full-Pak) package: insulated plastic case, single drain tab on backside, no metal tab isolation required. Mounting via M3 screw through center hole; recommended thermal pad area ≥1 cm² on inner PCB layer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R099C7 and STW20NM60FD, the STF25NM60ND delivers optimal balance of conduction loss, switching loss, and gate drive compatibility for 25 A, 600 V applications in TO-220FP form factor-enabling compact, cost-sensitive designs without sacrificing reliability.

Availability

STF25NM60ND is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, LED streetlight drivers, and industrial PFC boost stages requiring stable component supply across multi-year production cycles.

Supply support for STF25NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, power, and consumer markets since 1987.

The STF25NM60ND belongs to ST's SuperMESH™ III power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and lighting applications demanding ruggedness and predictable switching behavior.

FAQ

What is the maximum junction temperature and thermal resistance for STF25NM60ND?

The absolute maximum junction temperature is 150°C. With TO-220FP package mounted on 1 cm² 2-oz copper pad and 20 LFM airflow, R_θJC is 1.5°C/W and R_θJA is 40°C/W. Derating begins at 100°C ambient; full 25 A rating requires ≤60°C case temperature.

Does STF25NM60ND require a gate resistor, and what value is recommended?

Yes-a series gate resistor is mandatory to dampen parasitic oscillation and control dv/dt. ST recommends 10–47 Ω for standard PWM controllers (e.g., UC3845). Lower values (<10 Ω) increase risk of shoot-through in half-bridge configurations; higher values (>100 Ω) delay turn-off and raise switching loss.

Is STF25NM60ND suitable for use in automotive applications?

No. STF25NM60ND is not qualified to AEC-Q101 and lacks automotive-grade screening, extended temperature range (-40°C to 175°C), or PPAP documentation. It is intended for industrial, commercial, and lighting applications only.

How does the body diode performance compare to discrete ultrafast diodes?

The integrated body diode has t_rr = 110 ns and Q_rr = 1.1 µC at I_F = 25 A, matching performance of discrete 600 V ultrafast diodes (e.g., STTH1206D). However, its V_F is higher (~1.8 V vs. ~1.3 V), so it is best suited for low-duty-cycle freewheeling-not continuous conduction.