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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF26N60DM6

Name: STF26N60DM6
Brand: STMicroelectronics
SKU: STF26N60DM6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF26N60DM6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF26N60DM6.pdf

Description:: MOSFET N-CH 600V 18A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF26N60DM6 from STMicroelectronics is a high-voltage N-channel MDmesh DM6 Power MOSFET in TO-220FP package, rated 600 V V_DS, 165 mΩ typ. R_DS(on) at 10 V V_GS, and 18 A continuous drain current at T_C = 25 °C. It integrates a fast-recovery body diode with Q_rr = 0.35 µC (T_j = 25 °C) and trr = 100 ns, enabling high-efficiency ZVS phase-shift converters and bridge topologies.

For engineers reviewing the STF26N60DM6 datasheet, STF26N60DM6 pinout, STF26N60DM6 application, or STF26N60DM6 equivalent, key selection criteria include dv/dt ruggedness (100 V/ns), avalanche energy rating (360 mJ), gate charge (24 nC), thermal resistance (R_thj-case = 4.17 °C/W), and Zener-protected gate structure.

Technical Context

This MOSFET employs ST's MDmesh DM6 superjunction architecture optimized for high-voltage switching with minimized Q_rr and trr while maintaining low R_DS(on) per die area. Its fast-recovery body diode supports hard-switched and resonant topologies without external freewheeling diodes.

The device features intrinsic Zener gate protection, 100% unclamped inductive switching (UIS) tested to 4 A/360 mJ, and guaranteed dv/dt ruggedness up to 100 V/ns under specified conditions (V_DS ≤ 480 V). Thermal design is enabled by low junction-to-case resistance (4.17 °C/W) and insulation withstand voltage of 2.5 kV RMS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 400 V in full-bridge PFC or 380 V in offline SMPS with margin.
R_DS(on) max	195 mΩ - Ensures <1.8 W conduction loss at 18 A ID, critical for thermal management in enclosed power supplies.
Q_g	24 nC - Enables efficient 100–300 kHz switching with moderate gate driver strength (e.g., 1–2 A peak).
trr / Q_rr	100 ns / 0.35 µC - Reduces switching losses and EMI in hard-switched LLC and phase-shifted full-bridge converters.
dv/dt ruggedness	100 V/ns - Prevents spurious turn-on during high-slew-rate commutation in high-frequency inverters.
E_AS	360 mJ - Supports robust operation under transient overloads without failure in UPS or motor drive applications.
R_thj-case	4.17 °C/W - Allows 30 W dissipation with ≤125 °C junction rise above heatsink, simplifying thermal interface design.

Pinout & Package

TO-220FP package: insulated plastic case with integral heatsink tab (pin 2), non-isolated drain connection, and standard 3-pin vertical mounting footprint. Mounting screw hole centered on tab; leads are straight, tinned, and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
D (Pin 2)	Drain	Connected directly to heatsink tab; carries full load current and must be electrically isolated from chassis unless floating topology is used.
G (Pin 1)	Gate	High-impedance control terminal; requires low-inductance routing and gate resistor (4.7 Ω typical) to damp oscillation and limit dV/dt stress.
S (Pin 3)	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configurations or floating in high-side half-bridge setups.

Key Features

Feature	Design Value
Fast-recovery body diode	trr = 100 ns, Qrr = 0.35 µC - Eliminates need for external anti-parallel diode in synchronous rectification and bidirectional switches.
Low gate charge & capacitance	Qg = 24 nC, Ciss = 940 pF - Reduces driver power loss and enables higher frequency operation without excessive gate drive overhead.
Zener-protected gate	±25 V V_GS rating with integrated clamp - Prevents gate oxide rupture during layout transients or hot-plug events.
100% avalanche tested	E_AS = 360 mJ, I_AR = 4 A - Guarantees survivability under unclamped inductive switching, critical for reliability in motor drives.
High dv/dt ruggedness	100 V/ns - Maintains off-state integrity during rapid voltage transitions in SiC/GaN co-design or high-speed inverters.

Applications

Industrial Motor Drives

Server & Telecom PSU

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 400 V DC bus, operating at 10–20 kHz with PWM dead-time control.

Use Value: Low Qrr minimizes shoot-through risk and reduces snubber losses; 100 V/ns dv/dt rating ensures noise immunity in noisy factory environments.

Use Scenario: Primary-side switch in 3.3 kW server front-end PFC boost converter with interleaved topology.

IC Role / Device Role / Timing Role: Fast-switching, high-voltage switch delivering >96% efficiency at 100 kHz with soft-switching assistance.

Use Value: 165 mΩ R_DS(on) limits conduction loss to <1.5 W; low Coss eq. (157 pF) improves ZVS initiation at light loads.

Phase-Shifted Full-Bridge

UPS Inverters

Use Scenario: Output H-bridge in 5 kVA online UPS with zero-voltage switching and adaptive phase control.

IC Role / Device Role / Timing Role: Main power switch managing 400 V DC input, switching at 100–200 kHz with variable duty cycle and phase shift.

Use Value: Fast body diode recovery (trr = 100 ns) enables clean commutation across all load conditions; 360 mJ EAS handles output short-circuit transients.

Use Scenario: Bidirectional DC-AC inverter stage in line-interactive UPS with battery backup and grid synchronization.

IC Role / Device Role / Timing Role: Synchronous rectifier and inverter switch supporting both charging and discharging paths with reverse conduction capability.

Use Value: Integrated Zener-protected gate prevents damage during AC line surges; TO-220FP insulation (2.5 kV RMS) meets reinforced isolation requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF24N60M2	R_DS(on) = 220 mΩ (max), Q_rr = 0.52 µC, no Zener gate protection	Lower cost but higher conduction and switching losses; not rated for 100 V/ns dv/dt	Select when budget constraints outweigh efficiency targets and dv/dt stress is low (e.g., fixed-frequency flyback).
IPP60R190C7	R_DS(on) = 190 mΩ (typ), Q_rr = 0.31 µC, TO-220FP package, no integrated Zener	Slightly lower Qrr but lacks gate Zener; requires external gate protection network	Prefer when ultra-low Qrr is prioritized and gate protection can be implemented externally with discrete components.

Compared with STF24N60M2 and IPP60R190C7, STF26N60DM6 uniquely combines Zener gate protection, 100 V/ns dv/dt ruggedness, and industry-leading Qrr/R_DS(on) trade-off-making it optimal for mission-critical, high-reliability ZVS and phase-shifted topologies where layout-induced transients and diode recovery losses dominate design margins.

Availability

STF26N60DM6 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, phase-shifted full-bridge converters, and UPS inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STF26N60DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh DM6 series-a family of high-voltage superjunction MOSFETs engineered specifically for high-efficiency, high-frequency switched-mode power supplies and resonant converters demanding minimal Qrr and superior dv/dt immunity.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF26N60DM6 supports 11 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12863 Rev 2. This derating reflects thermal limitations of the TO-220FP package and must be applied when heatsink temperature exceeds 25 °C. Designers should verify safe operating area (SOA) curves for pulsed conditions.

Does this MOSFET require an external gate Zener diode?

No. The STF26N60DM6 integrates internal Zener protection between gate and source, rated for ±25 V V_GS. External clamping is unnecessary under normal operation, though a low-inductance RC snubber may still be recommended near the gate driver to suppress ringing in high-dV/dt layouts.

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode achieves trr = 100 ns and Qrr = 0.35 µC at T_j = 25 °C-approximately 40% lower Qrr than prior-generation MDmesh devices. This enables faster commutation, reduced reverse recovery loss, and elimination of external anti-parallel diodes in many high-frequency topologies.

Can STF26N60DM6 replace STF26N60M2 in existing designs?

Yes, with validation: both share TO-220FP package, pinout, and 600 V rating, but STF26N60DM6 offers lower R_DS(on) (165 vs. 190 mΩ typ), lower Qrr (0.35 vs. 0.52 µC), and added Zener gate protection. Layout changes are not required, but gate drive timing and snubber values may benefit from re-optimization.

STF26N60DM6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM6

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 195mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 940 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF26N60DM6 FAQ

1.How can I place an order for STF26N60DM6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF26N60DM6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF26N60DM6 reliable?

The price and inventory of STF26N60DM6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF26N60DM6 is usually 5 days.

3.What payment methods are accepted for STF26N60DM6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF26N60DM6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF26N60DM6?

STF26N60DM6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF26N60DM6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF26N60DM6?

For technical support, including STF26N60DM6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF26N60DM6 requirements.

6.How does Aetrix verify that STF26N60DM6 is sourced from the original manufacturer or authorized distributors?

All STF26N60DM6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF26N60DM6 meets industry standards.

7.What is the process for return or replacement of STF26N60DM6?

All STF26N60DM6 units undergo pre-shipment inspection (PSI). If there is an issue with STF26N60DM6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF26N60DM6 part is unused and in its original packaging.

Return procedure for STF26N60DM6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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