STMicroelectronics STF26N60M2

Overview

STF26N60M2 from STMicroelectronics is an N-channel 600 V, 20 A MDmesh M2 Power MOSFET in TO-220FP package, featuring 165 mΩ max R_DS(on), 34 nC total gate charge, and 100% avalanche tested. It delivers low conduction loss and optimized switching for high-efficiency resonant and LCC converters operating at high voltage and moderate current.

For engineers reviewing the STF26N60M2 datasheet, STF26N60M2 pinout, STF26N60M2 application, or STF26N60M2 equivalent, key selection criteria include its 600 V V_(BR)DSS, 140 mΩ typical R_DS(on), 88 pF C_oss, 15 V/ns diode recovery dv/dt rating, and Zener-protected gate structure - all critical for hard-switched and resonant SMPS designs.

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce R_DS(on) and output capacitance (C_oss = 88 pF typ.), enabling high-frequency operation with low switching loss. Its 100% unclamped inductive switching (UIS) testing ensures robustness under transient overloads.

The device integrates a Zener-protected gate (±25 V V_GS rating) and exhibits excellent dv/dt ruggedness (50 V/ns MOSFET, 15 V/ns diode recovery), making it suitable for fast-switching topologies where parasitic turn-on and diode reverse recovery stress are critical concerns.

Key Specifications

Pinout & Package

STF26N60M2 is housed in a TO-220FP (Full-Pak) package: insulated plastic case with integral heatsink tab, rated for 2.5 kV RMS insulation between leads and heat sink, and optimized for surface-mount-compatible through-hole mounting with reduced creepage distance requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STF22N60M2, STF26N60M2 offers 20 A current rating and lower R_DS(on) for better thermal headroom; versus IPP60R190C7, it provides built-in gate protection and higher insulation - critical for certified industrial power supplies without added BOM cost.

Availability

STF26N60M2 is available at Aetrix Electronics and suitable for server PSUs, EV on-board chargers, industrial UPS inverters, and telecom rectifier modules requiring stable component supply and long-term production continuity.

Supply support for STF26N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The MDmesh M2 product line targets high-efficiency, high-voltage power conversion - specifically engineered for resonant, soft-switching, and high-frequency SMPS topologies where low R_DS(on), low C_oss, and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF26N60M2 supports 13 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10923 Rev 3. This derating reflects thermal limitations of the TO-220FP package (R_thJC = 4.2 °C/W); proper heatsinking is required to sustain this current without exceeding 150 °C junction temperature.

Does STF26N60M2 have an integrated body diode, and what is its reverse recovery performance?

Yes, it features an intrinsic source-drain diode rated for 20 A continuous and 80 A pulsed current. At T_J = 25 °C, trr is 360 ns with Q_rr = 5 µC and I_RRM = 27 A under standard test conditions (ISD = 20 A, di/dt = 100 A/µs, VDD = 60 V), enabling reliable operation in synchronous rectification and freewheeling roles.

Can STF26N60M2 be used in place of older STF26NM60FD in existing designs?

No - STF26NM60FD uses FDmesh technology with different dynamic characteristics (higher C_oss, slower recovery). While both are 600 V/20 A TO-220FP MOSFETs, STF26N60M2's MDmesh M2 architecture yields 30% lower C_oss and faster switching, requiring gate drive and layout review to avoid oscillation or shoot-through due to reduced gate charge and higher dv/dt capability.

Is the TO-220FP package lead-free and RoHS compliant?

Yes, STF26N60M2 is manufactured in ECOPACK2-compliant TO-220FP packages, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The "ECOPACK2" marking on the device and packaging confirms halogen-free molding compound and lead-free terminations per JEDEC J-STD-609.