STMicroelectronics STF26N65DM2

Overview

STF26N65DM2 from STMicroelectronics is a high-voltage N-channel MDmesh™ DM2 Power MOSFET in TO-220FP package, rated 650 V V_DS, 0.190 Ω R_DS(on) max, 20 A continuous drain current, and featuring fast-recovery body diode (t_rr = 100 ns @ T_j = 25 °C) and 100% avalanche tested (E_AS = 530 mJ). It is engineered for ZVS phase-shift converters and bridge topologies in industrial SMPS.

For engineers reviewing the STF26N65DM2 datasheet, STF26N65DM2 pinout, STF26N65DM2 application, or STF26N65DM2 equivalent, key selection criteria include dv/dt ruggedness (50 V/ns), low Q_g (35.5 nC), C_oss,eq (140 pF), avalanche energy rating, and TO-220FP thermal resistance (R_thj-case = 4.2 °C/W).

Technical Context

This MOSFET employs ST's MDmesh™ DM2 silicon process to simultaneously minimize conduction loss (R_DS(on) = 0.156 Ω typ.) and switching loss via ultra-low gate charge (Q_g = 35.5 nC) and optimized output capacitance (C_oss,eq = 140 pF at 0–520 V). Its fast-recovery body diode achieves t_rr = 100 ns and Q_rr = 0.365 µC under standard test conditions (I_SD = 20 A, di/dt = 100 A/µs).

The device is fully characterized for high-dv/dt operation (50 V/ns) and unclamped inductive switching, with guaranteed single-pulse avalanche capability (I_AR = 3 A, E_AS = 530 mJ) and insulation withstand voltage of 2500 V_RMS between leads and heatsink - critical for isolated high-voltage power stages.

Key Specifications

Pinout & Package

TO-220FP package: insulated flange, vertical mounting, 3-pin through-hole outline with integrated heatsink isolation (2500 V_RMS rating). Flange is electrically connected to drain (D).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STF24N65M2 and IPP65R190CFD7, STF26N65DM2 uniquely balances low R_DS(on), ultra-low Q_rr, and certified avalanche ruggedness - making it the only choice for mission-critical ZVS bridge converters requiring both efficiency and fault tolerance.

Availability

STF26N65DM2 is available at Aetrix Electronics and suitable for telecom rectifier modules, industrial server PSUs, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STF26N65DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STF26N65DM2 belongs to the MDmesh™ DM2 high-voltage power MOSFET product line, developed specifically for high-efficiency, high-frequency switched-mode power supplies demanding low Q_rr, high dv/dt immunity, and guaranteed avalanche performance.

FAQ

What is the maximum safe operating temperature for STF26N65DM2?

The STF26N65DM2 has an operating junction temperature range of –55 °C to 150 °C. With R_thj-case = 4.2 °C/W and P_TOT = 30 W at T_case = 25 °C, sustained operation requires case temperature ≤100 °C to maintain T_j ≤150 °C. Derating is mandatory above 25 °C case temperature per the datasheet's thermal curve.

Does STF26N65DM2 require a gate resistor for stability?

Yes - a gate resistor (typically 4.7 Ω) is required to dampen ringing caused by PCB trace inductance interacting with Q_g and C_iss. The datasheet's switching time test circuit (Figure 13) specifies R_G = 4.7 Ω, and omitting it risks oscillation, increased EMI, and gate oxide overstress during fast dv/dt events.

Can STF26N65DM2 replace older STF26NM60ND in existing designs?

No - although both are TO-220FP N-channel 650 V MOSFETs, STF26NM60ND uses MDmesh™ II technology with higher R_DS(on) (0.220 Ω), slower t_rr (220 ns), and no Zener gate protection. Direct replacement would increase conduction loss, reduce ZVS margin, and risk gate failure under transient overvoltage.

Is the TO-220FP flange electrically isolated from all pins?

No - the insulated flange is internally connected to the drain (Pin 2). The 2500 V_RMS isolation rating applies only between the flange (drain) and external heatsink; source (Pin 3) and gate (Pin 1) remain at their respective circuit potentials and must be insulated from the heatsink per standard layout practices.