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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF26NM60ND

Name: STF26NM60ND
Brand: STMicroelectronics
SKU: STF26NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF26NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF26NM60ND.pdf

Description:: MOSFET N-CH 600V 21A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:6,655

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Product details

Overview

STF26NM60ND from STMicroelectronics is an N-channel 600 V, 0.145 Ω typ. R_DS(on), 21 A FDmesh™ II Power MOSFET in TO-220FP package, featuring intrinsic fast-recovery body diode and 100% avalanche tested ruggedness. It delivers low gate charge (54.6 nC), high dv/dt immunity (40 V/ns), and is optimized for ZVS phase-shift converters and half/full-bridge topologies in industrial SMPS.

For engineers reviewing the STF26NM60ND datasheet, STF26NM60ND pinout, STF26NM60ND application, or STF26NM60ND equivalent, this page provides verified electrical ratings, thermal resistance (R_thj-case = 3.57 °C/W), switching timing (t_d(off) = 69 ns), diode recovery performance (Q_rr = 1.39 µC at T_J = 25 °C), and package-specific mounting guidance for TO-220FP.

Technical Context

This device employs ST's second-generation MDmesh™ strip-layout vertical structure to achieve ultra-low on-resistance and superior switching efficiency. Its 600 V V_DS rating and 150 °C max junction temperature support operation in high-voltage DC-link stages of offline converters.

The integrated fast-recovery body diode enables synchronous rectification and reduces external snubber requirements. With 100% unclamped inductive switching (UIS) testing and E_AS = 100 mJ, it sustains repetitive avalanche stress without derating in hard-switched PFC or resonant LLC primary-side switches.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V AC mains-derived DC bus with 50% safety margin for surge handling
R_DS(on) typ.	0.145 Ω - Enables <1.5 W conduction loss at 10.5 A continuous drain current (T_C = 25 °C)
I_D cont. @ T_C = 25 °C	21 A - Sustains full-load current in 500–800 W industrial power supplies with forced-air cooling
Q_g	54.6 nC - Reduces gate drive power requirement and enables use with standard 1-A peak gate drivers
dv/dt ruggedness	40 V/ns - Ensures reliable operation in high-dV/dt environments like phase-shifted full-bridge converters
E_AS	100 mJ - Guarantees single-pulse avalanche survivability under worst-case turn-off fault conditions
t_r/t_f	14.5 ns / 27.5 ns - Minimizes switching transition losses and EMI generation in >100 kHz designs

Pinout & Package

STF26NM60ND uses the TO-220FP (Full-Pak) package: insulated plastic case with integral heatsink tab, 3-pin through-hole mount, and creepage/clearance optimized for 2500 V_RMS isolation between leads and heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main power path output terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to system ground
2 (Gate)	Control input	High-impedance MOS gate requiring <2.5 Ω intrinsic resistance; sensitive to ESD and ringing
3 (Source)	Power return reference node	Low-inductance source connection critical for stable switching; forms common reference for gate drive loop

Key Features

Feature	Design Value
FDmesh™ II technology	Enables 0.145 Ω R_DS(on) at 600 V via optimized strip-cell layout, reducing silicon area vs. planar equivalents
Intrinsic fast-recovery body diode	trr = 170 ns and Qrr = 1.39 µC at 25 °C enable efficient freewheeling in bridge configurations without external Schottky
100% avalanche tested	Each unit validated for UIS stress up to I_AR = 4 A and E_AS = 100 mJ, eliminating need for external clamping in cost-sensitive designs
Low C_iss/C_oss	C_iss = 1817 pF and C_oss = 90 pF minimize Miller effect and improve gate drive efficiency in high-frequency operation
TO-220FP insulation	2500 V_RMS isolation rating allows direct mounting to grounded heatsinks without insulating pads in non-safety-critical industrial systems

Applications

Industrial SMPS

ZVS Phase-Shift Converter

Use Scenario: 600 W telecom rectifier operating from 85–264 V AC input with active PFC and LLC secondary stage.

IC Role / Device Role / Timing Role: Primary-side high-side switch in asymmetrical half-bridge topology, switching at 100–150 kHz with soft turn-on.

Use Value: Low R_DS(on) and fast diode reduce conduction and reverse-recovery losses by 18% versus legacy 650 V MOSFETs, improving full-load efficiency to >94%.

Use Scenario: 1 kW server PSU using phase-shifted full-bridge with zero-voltage switching across line/load range.

IC Role / Device Role / Timing Role: Lag-leg switch subjected to hard commutation during dead-time transitions; requires robust dv/dt immunity and low Q_gd.

Use Value: 40 V/ns dv/dt rating and 32.5 nC Q_gd ensure reliable ZVS initiation even at light loads, minimizing shoot-through risk and EMI.

Motor Drive Inverter

UPS Output Stage

Use Scenario: 3-phase 7.5 kW HVAC inverter with 600 V DC bus and 16 kHz PWM carrier frequency.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 6-pack module configuration; handles regenerative braking energy via body diode.

Use Value: 21 A continuous current and 84 A pulsed rating support 150% overload for 60 s; trr = 170 ns prevents cross-conduction during commutation.

Use Scenario: Online double-conversion UPS with 400 V DC link and bidirectional inverter/rectifier stages.

IC Role / Device Role / Timing Role: Bidirectional switch in buck-boost converter controlling battery charge/discharge and grid synchronization.

Use Value: Avalanche-rated construction withstands grid transients and battery reversal events; 150 °C T_Jmax supports compact heatsink design in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP26NM60ND	Same die, TO-220 package (non-isolated tab); R_thj-case = 0.66 °C/W vs. 3.57 °C/W	Requires insulating washer for heatsink mounting; higher thermal performance but lower isolation safety	Select when thermal budget is tight and isolation not required; avoid in touch-safe or medical-adjacent designs
IPP60R099C6	650 V CoolMOS™ P6; R_DS(on) = 0.099 Ω; Q_g = 47 nC; no intrinsic fast diode (trr > 500 ns)	Superior conduction loss but demands external anti-parallel diode for bridge operation	Prefer for high-efficiency, low-frequency (<65 kHz) PFC where diode recovery is managed externally

Compared with STP26NM60ND, STF26NM60ND trades 5.4× higher thermal resistance for 2500 V isolation-critical in open-frame industrial PSUs. Versus IPP60R099C6, it sacrifices 31% lower R_DS(on) to retain integrated diode functionality and simplify layout in bridge-based topologies.

Availability

STF26NM60ND is available at Aetrix Electronics and suitable for industrial SMPS, ZVS phase-shift converters, motor drive inverters, and UPS output stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STF26NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STF26NM60ND belongs to the FDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600 V industrial power conversion systems where avalanche ruggedness and integrated diode performance are critical.

FAQ

What is the maximum allowable gate-source voltage for STF26NM60ND?

The absolute maximum V_GS rating is ±25 V, per Table 2 of the official datasheet. Operation beyond ±20 V is not recommended for long-term reliability, and gate drive circuits must include clamping (e.g., 18 V Zener) to prevent overshoot during fast switching transitions or PCB inductance coupling.

Does STF26NM60ND require a gate resistor, and what value is recommended?

Yes-a gate resistor is mandatory to control dV/dt and suppress oscillation. For typical 100–150 kHz operation with a 1-A peak gate driver, a 4.7 Ω resistor is validated in the datasheet (Figure 23). Lower values increase switching speed but risk ringing; higher values reduce EMI but raise switching losses proportionally.

Can STF26NM60ND be used in parallel configurations?

Yes, but only with careful attention to layout symmetry and gate drive matching. The device exhibits positive R_DS(on) temperature coefficient above 100 °C, enabling current sharing-but mismatched parasitic inductance or gate resistance will cause dynamic imbalance. Use Kelvin source connections and individual gate resistors for each paralleled unit.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

No-it is optimized for clamping and short-duration freewheeling in bridge topologies, not sustained conduction. While rated for 21 A continuous source-drain current, its V_SD = 1.6 V at 21 A results in higher loss than dedicated Schottky diodes. Use only in asymmetrical half-bridge or phase-shifted full-bridge where duty cycle limits diode conduction time.

STF26NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 175mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54.6 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1817 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF26NM60ND FAQ

1.How can I place an order for STF26NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STF26NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF26NM60ND reliable?

The price and inventory of STF26NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF26NM60ND is usually 5 days.

3.What payment methods are accepted for STF26NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF26NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF26NM60ND?

STF26NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF26NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF26NM60ND?

For technical support, including STF26NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF26NM60ND requirements.

6.How does Aetrix verify that STF26NM60ND is sourced from the original manufacturer or authorized distributors?

All STF26NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF26NM60ND meets industry standards.

7.What is the process for return or replacement of STF26NM60ND?

All STF26NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STF26NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF26NM60ND part is unused and in its original packaging.

Return procedure for STF26NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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