STMicroelectronics STF26NM60N-H

Overview

STF26NM60N-H from STMicroelectronics is an N-channel 600 V, 135 mΩ (typ), 20 A MDmesh II Power MOSFET in TO-220FP package, optimized for high-efficiency hard-switching and resonant converters. It delivers low gate charge (60 nC), low input capacitance (1800 pF), and 100% avalanche-tested ruggedness for industrial SMPS, PFC stages, and solar inverters.

For engineers reviewing the STF26NM60N-H datasheet, STF26NM60N-H pinout, STF26NM60N-H application, or STF26NM60N-H equivalent, key selection criteria include R_DS(on) stability over temperature, diode recovery performance (Q_rr = 5.8 µC), safe operating area at 150 °C, and insulation withstand voltage (2.5 kV RMS).

Technical Context

This device implements ST's second-generation MDmesh vertical strip architecture to minimize conduction and switching losses simultaneously. Its 600 V V_DS, 135 mΩ typical R_DS(on), and 60 nC total gate charge enable high-frequency operation in >100 kHz flyback and LLC topologies.

The integrated body diode exhibits fast reverse recovery (t_rr = 370 ns at 25 °C) and low Q_rr, reducing switching loss and EMI in bridge-leg configurations. Thermal resistance R_thJC = 3.6 °C/W supports high-power density designs with external heatsinking.

Key Specifications

Pinout & Package

TO-220FP (Type B) package: insulated tab, vertical mounting, single-side heatsinking capability. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STF26NM60N-H, STF24NM60ND trades thermal robustness for compact packaging and lower gate drive demand, while IPP60R190C7 offers superior high-frequency soft-switching behavior at the expense of higher conduction loss and price sensitivity.

Availability

STF26NM60N-H is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, photovoltaic inverters, and induction heating systems requiring stable component supply and long-term manufacturing continuity.

Supply support for STF26NM60N-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power transistors, sensors, and analog ICs for industrial, automotive, and consumer markets.

The MDmesh II Power MOSFET product line targets high-efficiency, high-voltage power conversion-specifically engineered for telecom rectifiers, server PSUs, and renewable energy systems demanding low R_DS(on) × Q_g and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF26NM60N-H supports 12.6 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11972 Rev 2. This derating reflects junction-to-case thermal resistance (3.6 °C/W) and maximum allowable T_J = 150 °C. Designers must verify heatsink interface resistance and ambient airflow to maintain this limit.

Does the TO-220FP package provide electrical isolation between the drain and heatsink?

Yes-the TO-220FP (Type B) package features an insulated metal tab that provides 2.5 kV RMS insulation between all three leads and the external heatsink per IEC 60747-17. This eliminates need for insulating pads in Class I/II AC-DC designs, but thermal interface material must still be applied for optimal heat transfer.

How does the body diode performance compare to discrete ultrafast diodes?

The integrated body diode has t_rr = 370 ns and Q_rr = 5.8 µC at 25 °C, which is slower and higher-charge than dedicated ultrafast diodes (e.g., MUR1620CT: t_rr ≈ 60 ns). However, its parameters are tightly matched to the MOSFET channel, enabling predictable synchronous rectification timing in half-bridge configurations without cross-conduction risk.

Is the 100% avalanche test performed per unit or per lot?

ST performs 100% individual-unit avalanche testing on STF26NM60N-H during final test, verifying each device meets the 610 mJ single-pulse E_AS specification at T_J = 25 °C. This screening ensures field reliability in unclamped inductive switching events such as PFC overvoltage or motor phase faults.