STMicroelectronics STF27N60M2-EP

Overview

STF27N60M2-EP from STMicroelectronics is an N-channel 600 V, 20 A Power MOSFET in TO-220FP package, fabricated with MDmesh M2 Enhanced Performance (EP) technology. It delivers 150 mΩ typical R_DS(on), 33 nC total gate charge, and 70 pF output capacitance (C_OSS), enabling ultra-low turn-off switching losses for high-frequency hard-switched SMPS above 150 kHz in industrial AC-DC and DC-DC converters.

For engineers reviewing the STF27N60M2-EP datasheet, STF27N60M2-EP pinout, STF27N60M2-EP application, or STF27N60M2-EP equivalent, key selection criteria include its 15 V/ns diode recovery dv/dt ruggedness, 2.5 kV isolation rating, 100% avalanche-tested reliability, and Zener-protected gate-critical for high-voltage resonant and phase-shifted full-bridge topologies.

Technical Context

This MOSFET employs a strip-based MDmesh M2 EP vertical structure to minimize both conduction loss (R_DS(on) = 150 mΩ typ.) and switching energy (E_OSS = 4.8 µJ at 400 V). Its optimized C_oss/C_rss ratio (70 pF / 1 pF) and low Q_gd/Q_gs ratio (16 nC / 5.2 nC) ensure fast, controllable turn-off with minimal voltage overshoot under high di/dt conditions.

The device integrates a monolithic Zener clamp between gate and source (±25 V V_GS rating) and features a robust unclamped inductive switching capability (E_AS = 260 mJ). Its TO-220FP package provides 4.2 °C/W junction-to-case thermal resistance and 2.5 kV RMS insulation from leads to heatsink-enabling direct mounting without isolation pads in high-density power stages.

Key Specifications

Pinout & Package

TO-220FP (Type B) package: insulated flange, vertical lead orientation, 3-pin through-hole mount. Flange electrically isolated from all pins; heatsink contact via flange backside only.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IXFH20N60P3 and IPP60R190C7, STF27N60M2-EP offers superior high-frequency efficiency due to its lower Q_g/C_OSS product and guaranteed 150 °C operation-making it the only option qualified for 200+ kHz industrial converters with full thermal margin.

Availability

STF27N60M2-EP is available at Aetrix Electronics and suitable for industrial AC-DC front-ends, server PSU LLC resonant converters, and photovoltaic string inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STF27N60M2-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M2 EP high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies where low switching loss and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF27N60M2-EP supports 13 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11479 Rev 2. This derating reflects thermal limits of the TO-220FP package's 4.2 °C/W R_thJC, not silicon capability-actual safe operating area allows short pulses up to 80 A.

Does this MOSFET require external gate protection?

No. The device integrates a monolithic Zener diode between gate and source, rated for ±25 V V_GS. This eliminates the need for external TVS diodes in standard gate-drive configurations, confirmed by ST's "Zener-protected" feature statement and absolute maximum rating table.

How does its output capacitance behave across voltage?

C_OSS remains stable at 70 pF from 0 to 100 V, then decreases gradually to ~35 pF at 480 V, as shown in Figure 6 of DS11479. This predictable profile enables accurate soft-switching timing calculations in resonant topologies without iterative characterization.

Is the TO-220FP flange electrically isolated from the drain pin?

Yes-the TO-220FP Type B package has an insulated flange. Drain (pin 2) connects internally to the die but is galvanically isolated from the flange surface, enabling direct mounting to grounded heatsinks without additional insulation, as verified by the 2.5 kV V_ISO rating in Table 1.