Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF28N60DM2

Name: STF28N60DM2
Brand: STMicroelectronics
SKU: STF28N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STF28N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF28N60DM2.pdf

Description:: MOSFET N-CH 600V 21A TO220FP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:869

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STF28N60DM2 from STMicroelectronics is a high-voltage N-channel MDmesh™ DM2 Power MOSFET in TO-220FP package, rated 600 V V_(BR)DSS, 0.13 Ω typ. R_DS(on), 21 A continuous drain current, and featuring fast-recovery body diode (t_rr = 140 ns @ T_j = 25 °C), low Q_g (34 nC), and Zener-protected gate. It is engineered for high-efficiency bridge and ZVS phase-shift converters.

For engineers reviewing the STF28N60DM2 datasheet, STF28N60DM2 pinout, STF28N60DM2 application, or STF28N60DM2 equivalent, key selection criteria include avalanche ruggedness (E_AS = 350 mJ), dv/dt immunity (50 V/ns), thermal resistance (R_thj-case = 4.2 °C/W), and fast diode recovery performance in hard-switched topologies.

Technical Context

This device implements ST's MDmesh™ DM2 silicon technology optimized for high-voltage switching with integrated fast-recovery body diode. Its low Q_rr (0.5 µC @ 25 °C) and t_rr reduce switching losses in resonant and phase-shifted full-bridge converters, while the built-in back-to-back gate-source Zener diodes (±30 V breakdown) provide ESD robustness without external clamping.

The MOSFET operates with V_GS(th) between 3–5 V and maintains stable R_DS(on) up to 125 °C case temperature. Its SOA is defined up to 100 °C case, supporting reliable operation under repetitive unclamped inductive switching with I_AR = 4 A and V_DD ≤ 480 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	600 V - Sustains 600 V drain-source blocking voltage before avalanche onset, enabling use in 400 V DC bus systems with margin.
R_DS(on) max	0.16 Ω - Limits conduction loss to ≤3.5 W at 21 A, critical for thermal management in enclosed power supplies.
Q_g	34 nC - Enables fast, low-loss switching with standard gate drivers; reduces driver power demand and layout complexity.
t_rr	140 ns - Minimizes reverse recovery loss and EMI generation during hard commutation in LLC and PSFB converters.
E_AS	350 mJ - Supports single-pulse unclamped inductive energy handling without failure, enhancing system reliability.
R_thj-case	4.2 °C/W - Allows 30 W dissipation with ≤126 °C junction rise above 25 °C case, defining heatsink sizing requirements.
dv/dt ruggedness	50 V/ns - Withstands rapid voltage transients across drain-source during turn-off, reducing risk of spurious turn-on.

Pinout & Package

STF28N60DM2 uses the TO-220FP (Full-Pak) package: insulated plastic case with integral heatsink tab, 3-pin vertical mounting configuration, and creepage/clearance compliant with 2.5 kV RMS isolation rating between leads and heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path to heatsink	Electrically connected to metal tab; must be isolated from chassis unless referenced to system ground; carries full load current.
Source	Reference node for gate drive and current sensing	Low-side return path; used for shunt-based current monitoring and gate drive reference; common to internal body diode cathode.
Gate	Control terminal for channel conduction	High-impedance input requiring <34 nC charge for full enhancement; protected by ±30 V Zener diodes to prevent ESD damage.

Key Features

Feature	Design Value
Fast-recovery body diode	t_rr = 140 ns and Q_rr = 0.5 µC enable efficient operation in synchronous rectification and bidirectional topologies without external diode.
Low gate charge	Q_g = 34 nC reduces switching transition time and driver losses, allowing use with low-power gate drivers like STGAP2SIC.
Zener-protected gate	Integrated ±30 V gate-source Zener diodes eliminate need for external TVS, simplifying layout and improving ESD immunity per IEC 61000-4-2 Level 4.
100% avalanche tested	Each unit validated for single-pulse avalanche energy (E_AS = 350 mJ), ensuring robustness in overvoltage fault conditions.
High dv/dt ruggedness	Rated 50 V/ns ensures immunity to parasitic turn-on in high-frequency half-bridge configurations with fast edge rates.

Applications

Industrial Motor Drives

Server PSU Front-End

Use Scenario: Three-phase inverter stage in 7.5 kW HVAC compressors operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side switching element in IGBT/MOSFET hybrid inverter leg, handling 21 A RMS with fast diode freewheeling.

Use Value: Low Q_rr and t_rr suppress shoot-through risk and reduce snubber losses, improving efficiency by ≥0.8% at full load.

Use Scenario: Active clamp forward or LLC resonant converter in 1.5 kW redundant server power supply.

IC Role / Device Role / Timing Role: Primary-side synchronous switch in phase-shifted full-bridge topology, switching at 200–500 kHz with ZVS.

Use Value: 0.13 Ω R_DS(on) and 34 nC Q_g minimize conduction + switching losses, enabling >96% peak efficiency at 230 V AC input.

Solar Microinverters

EV On-Board Charger

Use Scenario: H-bridge DC/AC inverter stage in 300 W photovoltaic microinverter with transformerless topology.

IC Role / Device Role / Timing Role: Bidirectional switching device managing reactive power flow and anti-islanding detection via body diode conduction.

Use Value: Fast-recovery diode (t_rr = 140 ns) enables precise zero-crossing control and meets IEEE 1547 anti-islanding timing constraints.

Use Scenario: Isolated DC/DC stage in 6.6 kW OBC converting 400 V battery to 14 V auxiliary rail.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in dual-active-bridge (DAB) topology, conducting 21 A continuously with reverse recovery during soft switching.

Use Value: Zener-protected gate withstands automotive-level ESD events during service access, eliminating field-failure root cause in 125 °C ambient environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7	R_DS(on) = 0.19 Ω, Q_g = 35 nC, t_rr = 180 ns, TO-220 package (non-isolated tab)	Lacks Zener gate protection and 2.5 kV isolation; higher R_DS(on) increases conduction loss by ~46%	Prefer when cost sensitivity outweighs isolation and ESD robustness requirements.
STW28N60DM2	Same die, TO-247 package; R_thj-case = 0.45 °C/W vs 4.2 °C/W; no built-in Zener diodes	Enables higher power density but requires external gate clamping and larger heatsink footprint	Select for >100 W continuous dissipation where thermal headroom justifies TO-247 mechanical redesign.

Compared with IPP60R190C7 and STW28N60DM2, STF28N60DM2 uniquely combines gate Zener protection, 2.5 kV isolation, and optimized Q_rr/R_DS(on) trade-off-making it ideal for space-constrained, safety-critical industrial and EV auxiliary power designs where reliability and layout simplicity are prioritized over raw power density.

Availability

STF28N60DM2 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and EV on-board chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STF28N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for automotive, industrial, and power applications.

The MDmesh™ DM2 product line targets high-efficiency, high-frequency SMPS designs-specifically engineered to replace older superjunction MOSFETs in telecom rectifiers, server PSUs, and renewable energy inverters with superior diode recovery and ruggedness.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF28N60DM2 supports 14 A continuous drain current at T_case = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits imposed by its 4.2 °C/W junction-to-case resistance and 150 °C maximum junction temperature, ensuring safe operation without exceeding SOA boundaries.

Does the TO-220FP package provide electrical isolation between leads and heatsink?

Yes-the TO-220FP package features reinforced insulation with 2.5 kV RMS withstand voltage (1 s, 25 °C) between all three leads and the external heatsink, verified per IEC 60747-5-2. This eliminates need for insulating pads in many industrial applications, though creepage distance must still comply with end-equipment safety standards.

How does the built-in Zener diode protect the gate?

The integrated back-to-back gate-source Zener diodes clamp transient voltages to ±30 V, preventing gate oxide breakdown during ESD events or gate driver overshoot. This replaces external TVS components, reduces PCB area, and improves system-level IEC 61000-4-2 compliance without sacrificing switching speed or gate drive integrity.

Can STF28N60DM2 replace STW28N60DM2 in existing designs?

No direct drop-in replacement: STF28N60DM2 uses TO-220FP (insulated tab, lower power dissipation), while STW28N60DM2 uses TO-247 (non-insulated tab, 0.45 °C/W R_thj-case). Mechanical fit, thermal design, and gate drive layout differ significantly; redesign is required to accommodate lower thermal capability and isolation requirements of the TO-220FP variant.

STF28N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF28N60DM2 FAQ

1.How can I place an order for STF28N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF28N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF28N60DM2 reliable?

The price and inventory of STF28N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF28N60DM2 is usually 5 days.

3.What payment methods are accepted for STF28N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF28N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF28N60DM2?

STF28N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF28N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF28N60DM2?

For technical support, including STF28N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF28N60DM2 requirements.

6.How does Aetrix verify that STF28N60DM2 is sourced from the original manufacturer or authorized distributors?

All STF28N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF28N60DM2 meets industry standards.

7.What is the process for return or replacement of STF28N60DM2?

All STF28N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STF28N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF28N60DM2 part is unused and in its original packaging.

Return procedure for STF28N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…