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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF28N60M2

Name: STF28N60M2
Brand: STMicroelectronics
SKU: STF28N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF28N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF28N60M2.pdf

Description:: MOSFET N-CH 600V 24A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF28N60M2 from STMicroelectronics is an N-channel 600 V, 22 A MDmesh M2 Power MOSFET in TO-220FP package, featuring 135 mΩ typical R_DS(on), 36 nC total gate charge, and 100% avalanche tested ruggedness. It delivers low conduction loss and fast switching for high-efficiency hard-switched PFC and SMPS in industrial power supplies.

For engineers reviewing the STF28N60M2 datasheet, STF28N60M2 pinout, STF28N60M2 application, or STF28N60M2 equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, 350 mJ single-pulse avalanche energy, Zener-protected gate, and optimized C_oss profile for reduced switching loss in continuous conduction mode converters.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to achieve low R_DS(on) while maintaining high voltage blocking (600 V) and robust unclamped inductive switching capability. Its 70 pF C_oss and 2 pF Crss enable precise control of turn-off behavior and reduced EMI generation.

The integrated body diode exhibits 350 ns reverse recovery time at 22 A and 100 A/µs di/dt, with 4.7 µC Q_rr at 25 °C - critical for minimizing commutation losses in bridge-leg configurations. The 4.17 °C/W R_thJC supports thermal management in compact heatsink-mounted designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Enables use in 400 V DC bus systems with 50% voltage margin for transient overvoltage handling.
R_DS(on) max	150 mΩ - Limits conduction loss to ≤ 73 W at 22 A continuous drain current (T_C = 25 °C).
Q_g	36 nC - Determines gate drive power requirement and enables <100 ns turn-off delay with 4.7 Ω external gate resistor.
E_AS	350 mJ - Supports reliable operation under unclamped inductive switching stress without external snubbers.
C_oss	70 pF - Reduces capacitive turn-on loss and improves efficiency in high-frequency (>100 kHz) resonant topologies.
dv/dt ruggedness	50 V/ns - Ensures immunity to false turn-on during high-slew-rate voltage transients in half-bridge applications.
T_J max	150 °C - Allows sustained operation in enclosed industrial enclosures with ambient temperatures up to 85 °C.

Pinout & Package

TO-220FP (Type B) package with insulated tab: thermally conductive but electrically isolated mounting surface; footprint compatible with standard TO-220 heatsinks; no solder tab required.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤ ±25 V bias; 5.5 Ω intrinsic gate resistance limits ringing in high-speed switching.
2 (D)	Drain	Main high-side power terminal; connected to internal die backside; electrically tied to insulated tab in TO-220FP.
3 (S)	Source	Power return path and gate reference node; must be routed with low-inductance layout to minimize V_GS noise coupling.

Key Features

Feature	Design Value
MDmesh M2 technology	Enables 600 V rating with 135 mΩ R_DS(on) - 25% lower on-resistance than prior-generation 600 V MOSFETs at same die size.
Zener-protected gate	Integrated gate oxide protection clamps V_GS to ±25 V, eliminating need for external gate Zener diodes in noisy industrial environments.
100% avalanche tested	Every unit validated for 3.6 A repetitive avalanche current - guarantees ruggedness in flyback and LLC primary switches.
Optimized C_oss profile	70 pF C_oss with flat voltage dependence reduces energy loss during hard-switching transitions across full V_DS range.
Low Q_gd/Q_gs ratio	16 nC / 7.2 nC = 2.22 - improves Miller immunity and enables stable operation with moderate gate drive strength (≥1 A peak).

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 1–3 kW AC-DC front-end converters operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from rectified AC line to bulk capacitor.

Use Value: 135 mΩ R_DS(on) and 36 nC Q_g reduce combined conduction and switching losses by ≥12% versus legacy 600 V MOSFETs.

Use Scenario: Active clamp forward or phase-shifted full-bridge primary switch in 48 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Main power switch subjected to high dv/dt and repetitive avalanche stress during clamp reset.

Use Value: 50 V/ns dv/dt ruggedness and 350 mJ E_AS eliminate need for external clamping circuits, simplifying layout and improving reliability.

Motor Drive Inverters

Induction Heating Systems

Use Scenario: Upper-leg IGBT replacement in 3–7.5 kW variable frequency drives for HVAC compressors.

IC Role / Device Role / Timing Role: High-side switching element in three-phase inverter leg, commutating inductive motor current.

Use Value: 350 ns t_rr and 4.7 µC Q_rr minimize cross-conduction loss and diode reverse recovery spikes during PWM dead-time transitions.

Use Scenario: Half-bridge switch in 2–5 kW resonant induction heating inverters operating at 20–100 kHz.

IC Role / Device Role / Timing Role: Fast-switching power device sustaining high peak currents (88 A pulsed) and repetitive avalanche events.

Use Value: 88 A I_DM and 100% avalanche testing ensure robustness against load mismatch and coil detuning faults.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF24N60M2	Lower ID (20 A), slightly higher R_DS(on) (165 mΩ typ.), identical 600 V rating and TO-220FP package.	Reduced thermal margin in 22 A continuous designs; suitable for cost-sensitive 1.5–2 kW PFC stages.	Select when system peak current remains ≤20 A and board-level thermal design cannot accommodate 22 A derating.
IPP60R190C7	Infineon CoolMOS C7; 600 V, 190 mΩ, 21 A; lower Q_g (27 nC) but no integrated Zener gate protection.	Requires external gate protection circuitry; superior light-load efficiency due to lower C_oss (45 pF).	Prefer where gate drive design includes discrete Zener clamping and EMI filtering is prioritized over ruggedness simplicity.

Compared with STF24N60M2, STF28N60M2 provides +2 A current headroom and −15 mΩ R_DS(on) for improved thermal margin; versus IPP60R190C7, it trades 9 nC higher Q_g for built-in gate protection and 100% avalanche screening - reducing BOM count and qualification effort in industrial-grade power supplies.

Availability

STF28N60M2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, and motor drive inverters requiring stable component supply and long-term production continuity.

Supply support for STF28N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power management applications.

This device belongs to ST's MDmesh™ M2 high-voltage power MOSFET family, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial and telecom infrastructure.

FAQ

Is STF28N60M2 suitable for use in zero-voltage switching (ZVS) topologies?

Yes - its 70 pF C_oss and 104 pF C_oss,eq provide predictable resonant timing for soft-switching implementation in LLC and phase-shifted full-bridge converters. Measured C_oss vs. V_DS curve (Figure 7) shows minimal voltage dependence, enabling accurate dead-time calculation and ZVS boundary prediction across 0–480 V.

What is the maximum recommended gate resistor value for reliable switching at 100 kHz?

A 10 Ω gate resistor is recommended for 100 kHz operation with 12 V gate drive, balancing switching speed (t_d(off) ≈ 100 ns) and gate oscillation suppression. Lower values (≤4.7 Ω) increase peak gate current demand (>2 A) and risk overshoot; higher values (>22 Ω) extend t_f beyond 15 ns, raising switching loss disproportionately.

Does the TO-220FP package require electrical isolation between heatsink and PCB ground?

Yes - the TO-220FP Type B package features an electrically insulated tab (2.5 kV RMS isolation rating). Mounting requires non-conductive thermal interface material and isolated mounting hardware. Direct heatsink-to-drain connection is permitted only if the heatsink is fully floating or referenced to drain potential.

How does STF28N60M2 perform under partial conduction at elevated temperature?

At T_J = 125 °C, R_DS(on) increases to 1.7× room-temperature value (≈229 mΩ), verified by Figure 10. Derated continuous current drops to 14 A (per Table 1), and safe operating area shrinks significantly above 100 V V_DS; thermal design must maintain T_C ≤ 85 °C to sustain 22 A operation.

STF28N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 37 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1370 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF28N60M2 FAQ

1.How can I place an order for STF28N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF28N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF28N60M2 reliable?

The price and inventory of STF28N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF28N60M2 is usually 5 days.

3.What payment methods are accepted for STF28N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF28N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF28N60M2?

STF28N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF28N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF28N60M2?

For technical support, including STF28N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF28N60M2 requirements.

6.How does Aetrix verify that STF28N60M2 is sourced from the original manufacturer or authorized distributors?

All STF28N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF28N60M2 meets industry standards.

7.What is the process for return or replacement of STF28N60M2?

All STF28N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STF28N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF28N60M2 part is unused and in its original packaging.

Return procedure for STF28N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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