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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF28NM50N

Name: STF28NM50N
Brand: STMicroelectronics
SKU: STF28NM50N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF28NM50N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF28NM50N.pdf

Description:: MOSFET N-CH 500V 21A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF28NM50N from STMicroelectronics is an N-channel 500 V, 135 mΩ typ. (158 mΩ max.), 21 A MDmesh™ II Power MOSFET in TO-220FP package, designed for high-efficiency switch-mode power supplies, PFC stages, and industrial AC-DC converters where low conduction loss and fast switching are critical.

For engineers reviewing the STF28NM50N datasheet, STF28NM50N pinout, STF28NM50N application, or STF28NM50N equivalent, this device is selected for its 500 V breakdown voltage, 50 nC total gate charge, 1735 pF input capacitance, 100% avalanche tested ruggedness, and optimized R_DS(on)-Q_g figure of merit in hard-switched topologies.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ vertical strip architecture to minimize both on-resistance and gate charge simultaneously-enabling high-voltage operation without sacrificing switching speed. Its 158 mΩ max. R_DS(on) at V_GS = 10 V and 10.5 A, combined with 50 nC Q_g, supports efficient operation in continuous conduction mode (CCM) PFC and resonant LLC primary-side switches.

The integrated body diode exhibits 326 ns reverse recovery time (T_J = 25 °C) and 5 µC Q_rr, enabling robust performance in freewheeling and synchronous rectification roles. Thermal resistance R_thJC is 3.6 °C/W, confirming suitability for thermally constrained TO-220FP mounting with heatsink interface.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Withstands full mains-derived DC bus voltages up to 400 V with margin for transient overvoltage in offline SMPS.
R_DS(on) max.	158 mΩ at V_GS = 10 V, I_D = 10.5 A - Enables <1.7 W conduction loss at 21 A continuous drain current in TO-220FP package.
Q_g	50 nC - Low gate drive energy reduces driver IC stress and enables use with standard 1-A peak gate drivers in 100–300 kHz designs.
C_iss	1735 pF - Predictable input capacitance simplifies gate drive loop stability analysis and snubber design.
E_AS	300 mJ - Confirmed single-pulse avalanche capability supports unclamped inductive switching in flyback and forward converters.
T_J max.	150 °C - Allows operation at elevated ambient temperatures when derated per SOA curves in DS6813 Figure 3.
dv/dt rating	15 V/ns - Ensures immunity to parasitic turn-on during high-speed switching in high-noise power stage environments.

Pinout & Package

STF28NM50N is housed in a TO-220FP (Full-Pak) package with isolated tab, offering enhanced creepage/clearance versus standard TO-220 while retaining footprint compatibility. The plastic body isolates the drain-connected tab from mounting hardware, eliminating need for insulating washers in heatsink assembly.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate (G)	High-impedance control terminal; requires ≤±25 V drive; 2.7 Ω intrinsic gate resistance limits ringing.
2 (Center)	Drain (D)	High-voltage power terminal connected to internal die backside; electrically tied to isolated metal tab.
3 (Right)	Source (S)	Power return path and gate reference; forms common node with driver ground in half-bridge configurations.

Key Features

Feature	Design Value
MDmesh™ II vertical structure	Reduces R_DS(on) × Q_g product by >30% vs. first-gen high-voltage MOSFETs-directly improving efficiency in 65–300 kHz converters.
100% avalanche tested	Guarantees minimum 300 mJ single-pulse avalanche energy-enables reliable operation without external clamping in flyback snubberless designs.
Low C_oss eq. (418 pF)	Minimizes capacitive turn-off losses and improves ZVS initiation in resonant topologies operating above 100 kHz.
Optimized body diode Q_rr	5 µC (T_J = 25 °C) - Reduces diode recovery loss and EMI generation compared to standard planar MOSFETs in bridge-leg freewheeling.
ECOPACK® compliant	Meets RoHS and halogen-free requirements per ST's environmental grade definitions-suitable for industrial and consumer end-equipment.

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 500–1000 W active clamp forward or asymmetrical half-bridge converters.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with 100–200 kHz switching frequency.

Use Value: 158 mΩ R_DS(on) and 50 nC Q_g reduce combined conduction + switching losses below 3.2 W at full load, improving system efficiency by ≥0.8%.

Use Scenario: Boost PFC stage in 3 kW telecom rectifier modules operating at 65 kHz with CCM control.

IC Role / Device Role / Timing Role: Fast-switching, high-current boost switch requiring low Q_g and rugged dv/dt immunity.

Use Value: 15 V/ns dv/dt rating prevents spurious turn-on during line transients; 300 mJ E_AS eliminates need for external avalanche clamps.

Motor Drive Inverters

Induction Heating Systems

Use Scenario: Upper-leg IGBT replacement in 3-phase 7.5 kW HVAC inverter output stage.

IC Role / Device Role / Timing Role: 500 V N-channel switch in 6–12 kHz PWM-driven leg with bootstrap gate drive.

Use Value: TO-220FP isolation allows direct heatsink mounting without insulation pads; 21 A I_D supports 15 A RMS motor phase current with 1.4× safety margin.

Use Scenario: Half-bridge switch in 20–50 kHz resonant tank for domestic induction cooktops.

IC Role / Device Role / Timing Role: High-dV/dt, high-di/dt power switch subjected to repetitive hard commutation and body diode reverse recovery.

Use Value: 326 ns t_rr and 5 µC Q_rr limit diode recovery loss to <0.4 W per device-reducing thermal stress in compact enclosed modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP28NM50N	Same die, TO-220 package with non-isolated tab; R_thJC = 0.83 °C/W vs. 3.6 °C/W; higher thermal performance but requires insulating hardware.	Better suited for heatsink-mounted designs with electrical isolation managed externally; not drop-in for TO-220FP PCB footprints.	Select when thermal budget is tighter and mechanical isolation can be implemented via mica pad or sil-pad.
IPP60R190C7	600 V, 190 mΩ, 18 A CoolMOS™ C7; lower Q_g (34 nC) but higher R_DS(on); optimized for ZVS, not hard-switched PFC.	Preferred in resonant LLC primary side; less suitable for CCM boost due to higher conduction loss at 21 A.	Choose for >200 kHz ZVS designs where Q_g dominates loss; avoid in 65–100 kHz hard-switched PFC with high I_D.

Compared with STP28NM50N, STF28NM50N trades thermal performance for simplified mechanical integration; compared with IPP60R190C7, it delivers lower conduction loss at 21 A but requires more gate drive strength-making it optimal for cost-sensitive, medium-frequency industrial SMPS.

Availability

STF28NM50N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifiers, and motor drive inverters requiring stable component supply, long-lifecycle support, and traceable sourcing from authorized channels.

Supply support for STF28NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STF28NM50N belongs to the MDmesh™ II high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switch-mode power conversion in industrial and computing infrastructure.

FAQ

What is the maximum continuous drain current for STF28NM50N at 100 °C case temperature?

The maximum continuous drain current I_D is 13 A at T_C = 100 °C, as specified in Table 1 of DS6813 Rev 3. This derating reflects thermal limits of the TO-220FP package, where junction-to-case thermal resistance is 3.6 °C/W and maximum T_J is 150 °C. Operation above this current requires active cooling or pulse-width limitation.

Does STF28NM50N have an integrated gate resistor?

No, STF28NM50N does not include an integrated gate resistor. Its intrinsic gate resistance is 2.7 Ω (Table 5), which is a parasitic property of the gate metallization-not a discrete series resistor. External gate resistors (typically 5–22 Ω) must be added to control switching speed, suppress oscillation, and limit peak gate current from the driver IC.

Can STF28NM50N replace STP28NM50N in an existing TO-220 footprint?

No-STF28NM50N uses TO-220FP (Full-Pak), which has identical lead spacing but a different body profile and isolated tab. While it fits the same PCB hole pattern, the TO-220FP's plastic-isolated tab eliminates need for insulating hardware, whereas STP28NM50N's metal tab requires electrical isolation from the heatsink. Mechanical fit does not imply functional interchangeability without layout review.

What is the typical reverse recovery charge (Q_rr) of the body diode at 150 °C junction temperature?

At T_J = 150 °C, the reverse recovery charge Q_rr is 6.2 µC, as measured under ISD = 21 A, di/dt = 100 A/µs, and VDD = 400 V (Table 7). This represents a 24% increase over the 25 °C value (5 µC), reflecting temperature-dependent minority carrier lifetime extension in the epitaxial drift region.

STF28NM50N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 158mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1735 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF28NM50N FAQ

1.How can I place an order for STF28NM50N through Aetrix?

Please submit a Request for Quotation (RFQ) for STF28NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF28NM50N reliable?

The price and inventory of STF28NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF28NM50N is usually 5 days.

3.What payment methods are accepted for STF28NM50N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF28NM50N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF28NM50N?

STF28NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF28NM50N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF28NM50N?

For technical support, including STF28NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF28NM50N requirements.

6.How does Aetrix verify that STF28NM50N is sourced from the original manufacturer or authorized distributors?

All STF28NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF28NM50N meets industry standards.

7.What is the process for return or replacement of STF28NM50N?

All STF28NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STF28NM50N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF28NM50N part is unused and in its original packaging.

Return procedure for STF28NM50N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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