STMicroelectronics STF28NM60ND

Overview

STF28NM60ND from STMicroelectronics is an N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFET in TO-220FP package, featuring intrinsic fast-recovery body diode and 100% avalanche tested ruggedness. It serves as a high-voltage switching device in bridge topologies and ZVS phase-shift converters, delivering low gate charge (62.5 nC) and high dv/dt capability (45 V/ns) for efficient hard-switching power conversion.

For engineers reviewing the STF28NM60ND datasheet, STF28NM60ND pinout, STF28NM60ND application, or STF28NM60ND equivalent, key selection criteria include R_DS(on) at 10 V gate drive, avalanche energy rating (450 mJ), thermal resistance (3.6 °C/W junction-to-case), reverse recovery performance (Q_rr = 1160 nC), and TO-220FP mounting constraints for conduction-limited thermal design.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ vertical strip layout to achieve ultra-low on-resistance while maintaining high voltage blocking. Its intrinsic body diode exhibits 170 ns reverse recovery time and 1160 nC Q_rr at 23 A, enabling reliable operation in inductive switching circuits without external snubbers.

The device is characterized for 600 V V_DS, 23 A continuous drain current at T_C = 25 °C, and operates up to 150 °C junction temperature. Its 4.7 Ω gate input resistance and 2090 pF C_iss support stable gate driving with standard 10 V logic-level controllers.

Key Specifications

Pinout & Package

STF28NM60ND uses the TO-220FP (Full-Pak) package: insulated plastic case with internal isolation between drain tab and leads, enabling direct PCB mounting without insulating hardware. The drain is connected to the metal tab; source and gate are on leads 1 and 2 respectively.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R190C6 and IXFH24N60P, STF28NM60ND offers the lowest R_DS(on) in TO-220FP form factor with integrated insulation-enabling compact, heatsink-integrated designs where conduction loss and mounting simplicity are prioritized over ultimate surge rating or package size flexibility.

Availability

STF28NM60ND is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and EV on-board chargers requiring stable component supply across multi-year production cycles.

Supply support for STF28NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

This device belongs to ST's FDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power supplies and motor control systems operating at 600 V class with demanding thermal and ruggedness requirements.

FAQ

What is the maximum continuous drain current for STF28NM60ND at 100°C case temperature?

The maximum continuous drain current is 14.5 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits imposed by the TO-220FP package's 3.6 °C/W junction-to-case thermal resistance and 150 °C maximum junction temperature. Operation above this current requires active cooling or reduced ambient temperature.

Does STF28NM60ND require a gate resistor for stable switching?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. The datasheet recommends R_G = 4.7 Ω for switching time characterization (Figure 18). Typical design values range from 2.2 Ω to 10 Ω depending on driver strength and EMI requirements. Lower values increase switching speed but risk ringing; higher values reduce EMI but increase switching losses.

Can STF28NM60ND replace STP28NM60ND in existing TO-220 layouts?

No-STF28NM60ND uses TO-220FP (insulated tab), while STP28NM60ND uses standard TO-220 (non-insulated tab). Pinout is identical (G-S-D), but the TO-220FP's internal isolation eliminates need for mica washers. Mechanical footprint differs: TO-220FP has shorter lead spacing and different mounting hole position, requiring PCB redesign for direct replacement.

What is the typical reverse recovery charge of the body diode at 150°C junction temperature?

At T_J = 150 °C, the reverse recovery charge Q_rr is 2090 nC, as specified in Table 7. This represents a 80% increase over the 25 °C value (1160 nC), directly impacting turn-on loss in hard-switched topologies. Thermal-aware gate drive timing must account for this degradation to maintain efficiency across the full operating temperature range.