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STMicroelectronics STF2HNK60Z

Part No.:
STF2HNK60Z
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSTF2HNK60Z.pdf
Description:
MOSFET N-CH 600V 2A TO220FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:709

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Product details

Overview

STF2HNK60Z from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET in TO-220FP package, rated for 600 V drain-source voltage, 4.8 Ω max RDS(on) at 10 VGS, and 2 A continuous drain current at TC = 25 °C. It delivers high dv/dt capability (4.5 V/ns), 100% avalanche tested performance (EAS = 120 mJ), and low intrinsic capacitance (Ciss = 280 pF), enabling robust switching in offline SMPS and AC-DC adapters.

For engineers reviewing the STF2HNK60Z datasheet, STF2HNK60Z pinout, STF2HNK60Z application, or STF2HNK60Z equivalent, key selection criteria include its Zener-protected gate, 2.5 kV insulation withstand voltage, 6.25 °C/W junction-to-case thermal resistance, and verified unclamped inductive switching behavior under 480 V conditions.

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - to reduce on-resistance while maintaining high-voltage ruggedness. Its Zener-protected gate structure (±30 VGS rating, 2 kV HBM ESD) enables reliable operation without external gate protection in noisy environments.

The MOSFET features low dynamic parameters: Qg = 11–15 nC, Qgd = 6 nC, and Coss,eq = 30 pF, supporting efficient high-frequency switching up to several hundred kHz. Its source-drain diode exhibits trr = 178 ns and Qrr = 445 nC at 25 °C, with controlled recovery characteristics critical for reducing switching losses in flyback and resonant topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - supports primary-side switching in universal-input (85–265 VAC) offline power supplies without derating.
RDS(on) max 4.8 Ω at VGS = 10 V, ID = 1 A - defines conduction loss in continuous conduction mode (CCM) operation at full load.
ID cont 2.0 A at TC = 25 °C - sets maximum steady-state current handling before thermal limiting at heatsink interface.
EAS 120 mJ (single-pulse, VDD = 50 V, IAR = 2 A) - quantifies energy-handling capability during unclamped inductive turn-off events.
dv/dt 4.5 V/ns - ensures immunity to false triggering during fast voltage transients in high-noise industrial or appliance environments.
VISO 2.5 kV RMS (1 s, TC = 25 °C) - permits direct mounting to grounded heat sinks without insulating hardware in Class II isolation designs.
Coss,eq 30 pF - reduces capacitive discharge loss and improves efficiency in hard-switched and quasi-resonant converters.

Pinout & Package

STF2HNK60Z uses the TO-220FP (Full-Pak) package: insulated plastic case with integral heatsink tab, 3-pin vertical lead configuration, and creepage/clearance optimized for high-voltage safety compliance.

Pin/Terminal Circuit Role Design Meaning
D (Pin 2) Drain High-voltage power node connected to transformer primary or bus rail; electrically tied to metal tab in TO-220FP.
G (Pin 1) Gate Control input requiring <3.75 V threshold; Zener-clamped to ±30 V for overvoltage resilience.
S (Pin 3) Source Return path for load current; referenced to driver ground; forms common node with gate drive return.

Key Features

Feature Design Value
Zener-protected gate Integrated bidirectional Zener clamps gate-source to ±30 V, eliminating need for external TVS in cost-sensitive adapter designs.
100% avalanche tested Every unit validated for single-pulse avalanche energy (EAS ≥ 120 mJ), ensuring field reliability in unclamped inductive switching.
Low gate charge Qg = 11–15 nC minimizes driver power loss and enables use of low-cost bipolar or small-SOA MOSFET drivers.
Very low intrinsic capacitance Ciss = 280 pF and Coss,eq = 30 pF reduce switching transition losses and improve light-load efficiency in QR flyback converters.
High dv/dt immunity 4.5 V/ns rating prevents spurious turn-on during rapid drain voltage transitions in high-frequency PFC or LLC stages.

Applications

AC-DC Adapter Primary Switch Offline LED Driver Switch

Use Scenario: 12 W universal-input (85–265 VAC) flyback converter powering USB-C PD accessories.

IC Role / Device Role / Timing Role: Primary-side power switch operating in discontinuous conduction mode (DCM) at ~65 kHz, driven by UC3842-based controller.

Use Value: Zener-protected gate eliminates external gate clamp; 2.5 kV insulation allows direct heatsink mounting, reducing BOM count and assembly cost.

Use Scenario: 25 W constant-voltage LED driver for commercial downlights with surge immunity to IEC 61000-4-5 Level 3.

IC Role / Device Role / Timing Role: High-side switch in primary-side regulated quasi-resonant flyback, handling peak currents up to 8 A during startup.

Use Value: 100% avalanche testing ensures survival during lightning-induced line surges; low Coss,eq improves zero-voltage switching margin across input range.

Industrial PLC Power Supply White Goods Motor Control Pre-driver

Use Scenario: 30 W auxiliary supply in programmable logic controller (PLC) backplane, operating continuously at 60 °C ambient.

IC Role / Device Role / Timing Role: Main switch in active-clamp forward converter, delivering isolated 5 V/12 V rails with tight regulation.

Use Value: RthJC = 6.25 °C/W enables stable operation with minimal heatsinking; 150 °C max TJ rating supports extended lifetime at elevated temperatures.

Use Scenario: High-side pre-driver stage in washing machine main motor inverter, controlling gate of 600 V IGBT half-bridge.

IC Role / Device Role / Timing Role: Isolated level-shifting switch feeding bootstrap capacitor for high-side IGBT gate driver IC.

Use Value: 4.5 V/ns dv/dt immunity prevents false triggering during IGBT commutation; TO-220FP insulation avoids creepage violations in compact PCB layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP2NK60Z Same SuperMESH die, but TO-220 (non-insulated) package; no VISO rating; RDS(on) = 4.8 Ω identical. Requires insulating washer for heatsink mounting; unsuitable where creepage > 4 mm is mandated (e.g., medical, Class II). Select when mechanical mounting constraints allow non-insulated packages and cost is prioritized over safety certification effort.
FQP2N60 600 V, 5.5 Ω RDS(on), no Zener gate protection, Ciss = 320 pF, EAS not specified. Lacks avalanche validation and gate protection; requires external gate clamp and careful SOA management in inductive loads. Acceptable only in low-risk, low-volume consumer applications where full ruggedness is not required and design margins are generous.

Compared with STP2NK60Z and FQP2N60, STF2HNK60Z provides certified insulation, guaranteed avalanche energy, and integrated gate protection - making it the only choice for safety-critical, high-reliability offline power designs requiring minimal external components and regulatory-ready layout.

Availability

STF2HNK60Z is available at Aetrix Electronics and suitable for AC-DC adapters, industrial PLC auxiliary supplies, and white goods motor control pre-drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for STF2HNK60Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STF2HNK60Z belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies where ruggedness, low EMI, and minimal external protection are critical design goals.

FAQ

Is STF2HNK60Z suitable for use in continuous conduction mode (CCM) PFC circuits?

No - STF2HNK60Z is optimized for DCM and QR flyback topologies, not CCM PFC. Its 2 A continuous current rating and thermal resistance (RthJC = 6.25 °C/W) limit usable power in high-duty-cycle, high-current PFC stages. For CCM PFC, ST recommends devices like STL10DN60M2 with higher ID and lower RDS(on).

What is the maximum recommended gate resistor value for reliable switching at 100 kHz?

A gate resistor of ≤ 10 Ω is recommended for 100 kHz operation. With Qg = 15 nC max and typical driver output impedance < 2 Ω, a 10 Ω resistor limits turn-on time to < 150 ns, preserving switching speed while damping ringing. Higher values increase switching losses and risk incomplete turn-on during short pulses.

Does the TO-220FP package require thermal compound when mounted to an aluminum heatsink?

Yes - despite the insulated tab, thermal interface material (TIM) is mandatory between the TO-220FP metal tab and heatsink. The plastic housing has high thermal resistance; TIM reduces junction-to-heatsink thermal impedance by >50%, preventing thermal runaway at ID > 1.2 A continuous.

Can STF2HNK60Z replace STP2NK60Z in an existing design without layout changes?

No - although electrically identical, STF2HNK60Z's TO-220FP package has different pin pitch (2.54 mm vs. STP2NK60Z's 5.08 mm) and tab geometry. PCB footprint, heatsink cutout, and mounting hole positions must be revised to accommodate the Full-Pak outline and ensure proper creepage clearance per IEC 62368-1.

STF2HNK60Z Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
SuperMESH™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
280 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
20W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP

STF2HNK60Z FAQ

1.How can I place an order for STF2HNK60Z through Aetrix?

Please submit a Request for Quotation (RFQ) for STF2HNK60Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF2HNK60Z reliable?

The price and inventory of STF2HNK60Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF2HNK60Z is usually 5 days.

3.What payment methods are accepted for STF2HNK60Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF2HNK60Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF2HNK60Z?

STF2HNK60Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF2HNK60Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF2HNK60Z?

For technical support, including STF2HNK60Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF2HNK60Z requirements.

6.How does Aetrix verify that STF2HNK60Z is sourced from the original manufacturer or authorized distributors?

All STF2HNK60Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF2HNK60Z meets industry standards.

7.What is the process for return or replacement of STF2HNK60Z?

All STF2HNK60Z units undergo pre-shipment inspection (PSI). If there is an issue with STF2HNK60Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF2HNK60Z part is unused and in its original packaging.

Return procedure for STF2HNK60Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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