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STMicroelectronics STF2LN60K3

Part No.:
STF2LN60K3
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSTF2LN60K3.pdf
Description:
MOSFET N CH 600V 2A TO-220FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:895

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Product details

Overview

STF2LN60K3 from STMicroelectronics is an N-channel 600 V, 4 Ω typ., 2 A SuperMESH3™ Power MOSFET in TO-220FP package, designed for high-voltage switching in offline SMPS, AC-DC adapters, and LED drivers. It features 100% avalanche testing, 12 V/ns dv/dt capability, 2500 V HBM ESD rating, and integrated gate-source Zener protection.

For engineers reviewing the STF2LN60K3 datasheet, STF2LN60K3 pinout, STF2LN60K3 application, or STF2LN60K3 equivalent, key selection criteria include its 20 W total dissipation at TC = 25 °C, 6.25 °C/W junction-to-case thermal resistance, low 235 pF input capacitance, and improved diode reverse recovery (trr = 200 ns @ Tj = 25 °C).

Technical Context

This MOSFET employs ST's optimized vertical SuperMESH3™ structure to achieve low RDS(on) while maintaining robust 600 V blocking capability. Its dynamic performance is characterized by low Crss (3.5 pF), fast switching (td(on) = 10 ns, tf = 21 ns), and controlled diode recovery with Qrr = 800 nC.

The device integrates back-to-back gate-source Zener diodes (BVGSO = 30 V) for transient suppression and ESD hardening, eliminating external clamping components. Its TO-220FP package provides insulated mounting with 2500 V RMS isolation between leads and heat sink.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS600 V - supports primary-side switching in universal-input offline converters up to 265 VAC.
RDS(on) typ.4 Ω @ VGS = 10 V, ID = 1 A - enables low conduction loss in 2 A continuous applications.
PTOT @ TC = 25 °C20 W - defines maximum steady-state power handling in TO-220FP with adequate heatsinking.
dv/dt capability12 V/ns - ensures immunity to false turn-on during high-speed voltage transients in hard-switched topologies.
trr / Qrr200 ns / 800 nC @ Tj = 25 °C - reduces switching losses and EMI in flyback and resonant converters using body diode commutation.
Rthj-case6.25 °C/W - determines minimum heatsink requirement for thermal management at full load.
VESD(G-S)2500 V HBM - provides robust gate protection during PCB handling and assembly without external ESD safeguards.

Pinout & Package

STF2LN60K3 is housed in a TO-220FP (Full-Pak) package with insulated tab, enabling direct mounting to grounded heat sinks without electrical isolation hardware. The plastic body isolates all three leads from the tab, rated for 2500 V RMS insulation.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl terminal; requires ≤ ±30 V drive; integrated 30 V Zener limits overvoltage stress.
2 (D, TAB)Drain (connected to insulated tab)Main high-side current path; tab serves as thermally efficient drain connection with 2500 V isolation.
3 (S)SourcePower return and reference node; used for current sensing and gate drive referencing.

Key Features

FeatureDesign Value
100% avalanche testedGuarantees ruggedness under unclamped inductive switching (EAS = 80 mJ), eliminating need for external snubbers in flyback designs.
Extremely high dv/dt capability12 V/ns rating prevents spurious turn-on in high-noise environments like industrial motor drives and lighting ballasts.
Very low intrinsic capacitanceCiss = 235 pF, Crss = 3.5 pF - minimizes Miller effect and gate drive power requirements in high-frequency SMPS (>100 kHz).
Zener-protected gateIntegrated 30 V bidirectional Zener eliminates external gate clamp diodes, reducing BOM count and layout area.
Improved diode reverse recoverytrr = 200 ns, IRRM = 8 A - lowers diode-induced switching loss and voltage overshoot during LLC or QR flyback dead-time transitions.

Applications

AC-DC AdaptersLED Drivers

Use Scenario: 30–60 W universal-input offline flyback converter powering consumer electronics.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 65–130 kHz with discontinuous conduction mode (DCM).

Use Value: Low RDS(on) and fast trr reduce conduction and recovery losses, improving efficiency to >87% at full load.

Use Scenario: Isolated constant-current LED driver for street lighting (50–100 W).

IC Role / Device Role / Timing Role: Primary-side switching element in quasi-resonant (QR) flyback topology with valley-switching control.

Use Value: High dv/dt immunity ensures reliable operation despite high di/dt from long LED string inductive loads.

Industrial SMPSAppliance Power Supplies

Use Scenario: 48 V/2 A auxiliary supply in PLC I/O modules with wide ambient temperature range (−40 °C to +85 °C).

IC Role / Device Role / Timing Role: Main power switch in fixed-frequency forward converter with synchronous rectification.

Use Value: 150 °C max junction temperature and stable RDS(on) vs. temperature enable derating-free operation across industrial temperature extremes.

Use Scenario: Main power switch in induction cooker auxiliary supply (24 V/1.5 A).

IC Role / Device Role / Timing Role: High-side switch in half-bridge configured offline resonant converter.

Use Value: Avalanche ruggedness (IAR = 2 A, EAS = 80 mJ) withstands repeated fault events during cooking cycle interruptions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP2LN60K3Same die, TO-220 (non-FP) package; no isolation - tab is electrically connected to drain.Requires insulating washer and bushing for heatsink mounting; unsuitable where creepage/clearance or safety isolation is mandated.Select when cost-sensitive and mechanical isolation is handled externally; avoid in double-insulated or medical-grade supplies.
FQP2N60600 V, 3.6 Ω typ., 2 A, TO-220; lacks Zener gate protection and 100% avalanche test.No integrated gate clamp; higher risk of gate oxide failure under ESD or transient conditions without external protection.Acceptable for low-risk consumer applications with controlled assembly; not recommended for industrial or high-reliability use.

Compared with STP2LN60K3 and FQP2N60, STF2LN60K3 uniquely combines certified avalanche ruggedness, gate Zener protection, and reinforced insulation in a single TO-220FP package - critical for safety-compliant, high-reliability offline power stages.

Availability

STF2LN60K3 is available at Aetrix Electronics and suitable for AC-DC adapters, LED drivers, and industrial SMPS requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STF2LN60K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, microcontrollers, sensors, and analog solutions for automotive, industrial, and consumer markets.

The SuperMESH3™ Power MOSFET product line targets high-efficiency, high-reliability offline power conversion - specifically engineered for demanding 600 V switching applications where avalanche capability, dv/dt immunity, and integrated protection are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF2LN60K3 supports 1.26 A continuous drain current at TC = 100 °C, as specified in Table 2 of the datasheet. This derated value accounts for thermal limitations of the TO-220FP package and must be respected to maintain safe junction temperature below 150 °C.

Does STF2LN60K3 require an external gate resistor for stability?

Yes - a gate resistor (e.g., 4.7 Ω as used in switching time tests) is required to dampen ringing and control dV/dt during turn-on/turn-off. The device's low Crss (3.5 pF) and RG (7 Ω intrinsic) make external gate resistance essential for EMI reduction and MOSFET safe operating area compliance.

Can STF2LN60K3 replace STF12N60M2 in existing designs?

No - STF12N60M2 is a 12 A, 0.58 Ω device with different SOA, thermal resistance, and gate charge. STF2LN60K3 has lower current rating (2 A), higher RDS(on), and distinct dynamic characteristics; direct substitution would cause thermal overload and reduced efficiency in high-current applications.

Is the TO-220FP package lead-free and RoHS compliant?

Yes - STF2LN60K3 is manufactured in ECOPACK®-compliant TO-220FP packaging, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. Full environmental compliance data, including halogen-free status, is documented in ST's ECOPACK® database at www.st.com.

STF2LN60K3 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
SuperMESH3™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
235 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
20W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP

STF2LN60K3 FAQ

1.How can I place an order for STF2LN60K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF2LN60K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF2LN60K3 reliable?

The price and inventory of STF2LN60K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF2LN60K3 is usually 5 days.

3.What payment methods are accepted for STF2LN60K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF2LN60K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF2LN60K3?

STF2LN60K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF2LN60K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF2LN60K3?

For technical support, including STF2LN60K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF2LN60K3 requirements.

6.How does Aetrix verify that STF2LN60K3 is sourced from the original manufacturer or authorized distributors?

All STF2LN60K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF2LN60K3 meets industry standards.

7.What is the process for return or replacement of STF2LN60K3?

All STF2LN60K3 units undergo pre-shipment inspection (PSI). If there is an issue with STF2LN60K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF2LN60K3 part is unused and in its original packaging.

Return procedure for STF2LN60K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STF2LN60K3 Tags

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