STMicroelectronics STF2N62K3

Overview

STF2N62K3 from STMicroelectronics is an N-channel 620 V, 2.9 Ω typ. (3.6 Ω max), 2.2 A MDmesh™ K3 Power MOSFET in TO-220FP package, featuring built-in Zener-protected gate, 12 V/ns dv/dt capability, and 85 mJ single-pulse avalanche energy - deployed in offline SMPS flyback converters requiring high-voltage switching robustness.

For engineers reviewing the STF2N62K3 datasheet, STF2N62K3 pinout, STF2N62K3 application, or STF2N62K3 equivalent, this device is evaluated for high-efficiency 65–100 W AC/DC adapters, industrial auxiliary supplies, and LED driver primary-side switches where low R_DS(on), fast diode recovery (200 ns trr), and unclamped inductive switching resilience are critical selection criteria.

Technical Context

This MOSFET employs ST's MDmesh™ K3 vertical superjunction architecture optimized for high-voltage operation with reduced specific on-resistance and minimized output capacitance (C_oss = 26 pF). Its integrated gate-source Zener diodes (±30 V breakdown) provide intrinsic ESD protection without external clamping components.

The device delivers enhanced dynamic performance via low gate charge (Q_g = 15 nC), fast switching (t_d(off) = 21 ns, t_f = 22 ns), and improved source-drain diode characteristics (V_SD = 1.6 V at 2.2 A, Q_rr = 0.9 µC), enabling efficient hard-switched topologies operating up to 150 °C junction temperature.

Key Specifications

Pinout & Package

TO-220FP package: insulated tab (DRAIN), 3-pin through-hole outline with internal thermal isolation between drain tab and leads. Pin 1 = GATE, Pin 2 = DRAIN (tab), Pin 3 = SOURCE.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STF2N62K3, STP2N62K3 offers superior thermal performance but demands SMT layout and PCB thermal design, while FQP2N62F increases BOM count and layout complexity due to missing integrated protections - making STF2N62K3 optimal for through-hole, thermally constrained, and high-reliability offline power stages.

Availability

STF2N62K3 is available at Aetrix Electronics and suitable for AC/DC flyback converters, industrial auxiliary power supplies, and LED driver primary-side switching requiring stable component supply and long-term manufacturing continuity.

Supply support for STF2N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STF2N62K3 belongs to the MDmesh™ K3 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies operating up to 620 V with minimal conduction and switching losses.

FAQ

What is the maximum safe operating voltage for STF2N62K3 in continuous conduction?

The absolute maximum drain-source voltage (V_DS) is 620 V DC, validated under all operating conditions including temperature extremes and transient surges. Operation above 500 V DC is permitted only with ≥20% design margin and adherence to SOA limits defined in Figure 3 of DS7248 - exceeding 620 V risks irreversible avalanche failure even with short pulses.

Does STF2N62K3 require external gate protection components?

No. The device integrates back-to-back Zener diodes between gate and source with ±30 V breakdown voltage, verified per Table 8 of DS7248. This eliminates the need for external gate clamps in standard 10 V gate-drive circuits, provided V_GS does not exceed ±20 V during normal operation and layout avoids excessive gate loop inductance.

How does the TO-220FP package differ from standard TO-220 in thermal and isolation performance?

TO-220FP features full electrical isolation between the drain tab and leads, rated for 2500 V RMS insulation - unlike standard TO-220 which requires insulating pads. Its R_th(j-case) is 6.25 °C/W (vs ~1.5 °C/W for non-isolated TO-220), trading thermal efficiency for safety-critical isolation in grounded-heatsink applications.

Can STF2N62K3 replace STF2NK60Z in existing 600 V designs?

Yes, with validation: STF2N62K3 offers higher V_DS (620 V vs 600 V), lower R_DS(on) (3.6 Ω vs 4.5 Ω max), and improved dv/dt (12 V/ns vs 8 V/ns), but shares identical TO-220FP footprint and pinout. Gate charge is slightly higher (15 nC vs 13 nC), requiring minor gate driver strength verification in high-frequency layouts.